INFINEON SMBTA42

SMBTA42/MMBTA42
NPN Silicon Transistor for High Voltages
3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 (PNP)
2
1
Type
Marking
SMBTA42/MMBTA42 s1D
Pin Configuration
1=B
2=E
VPS05161
Package
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
300
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
6
DC collector current
IC
500
Base current
IB
100
Total power dissipation, TS = 74 °C
Ptot
360
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
210
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-21-2003
SMBTA42/MMBTA42
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
300
-
-
V(BR)CBO
300
-
-
V(BR)EBO
6
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
IEBO
-
-
100
nA
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector cutoff current
VCB = 200 V, IE = 0
Collector cutoff current
VCB = 200 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
-
hFE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
IC = 30 mA, VCE = 10 V
40
-
-
VCEsat
-
-
0.5
VBEsat
-
-
0.9
50
-
-
MHz
-
-
4
pF
Collector-emitter saturation voltage1)
V
IC = 20 mA, IB = 2 mA
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
fT
IC = 10 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 20 V, f = 1 MHz
1) Pulse test: t < 300s; D < 2%
2
Feb-21-2003
SMBTA42/MMBTA42
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 10V, f =100MHz
400
10 3
mW
SMBTA 42/43
EHP00839
MHz
fT
320
Ptot
280
240
10 2
200
160
5
120
80
40
0
0
15
30
45
60
75
10 1
10 0
°C 150
TS
90 105 120
5
10 1
5
10 2 mA 5
ΙC
Permissible pulse load
Operating range IC = f (VCEO)
Ptotmax / PtotDC = f (tp )
TA = 25°C, D = 0
10 3
SMBTA 42/43
EHP00840
Ptot max
5
Ptot DC
D=
10 3
SMBTA 42/43
EHP00841
mA
tp
tp
T
10 3
ΙC
T
10 2
10 2
5
10 1
10 µs
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
100 µs
1 ms
5
100 ms
DC
10
5
500 ms
0
5
10 0
10 -6
10
-5
10
-4
10
-3
10
-2
s
10
10 -1
10 0
0
tp
5
10 1
5
10 2
V 5
10 3
V CEO
3
Feb-21-2003
SMBTA42/MMBTA42
Collector cutoff current ICBO = f (TA)
Collector current IC = f (VBE)
VCB = 160V
VCE = 10V
10 4
nA
Ι CBO
10
5
SMBTA 42/43
EHP00842
10 3
SMBTA 42/43
EHP00843
mA
ΙC
max
3
10 2
5
10 2
5
10 1
typ
10 1
5
5
10 0
10
5
0
5
10 -1
10 -1
0
50
0
C 150
100
0.5
V
1.0
1.5
V BE
TA
DC current gain hFE = f (IC )
VCE = 10V
10 3
SMBTA 42/43
EHP00844
5
h FE
10 2
5
10 1
5
10 0
-1
10
5 10 0
5 10 1
5 10 2 mA 10 3
ΙC
4
Feb-21-2003