SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 (PNP) 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 DC collector current IC 500 Base current IB 100 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-21-2003 SMBTA42/MMBTA42 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 300 - - V(BR)CBO 300 - - V(BR)EBO 6 - - ICBO - - 100 nA ICBO - - 20 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 40 - - VCEsat - - 0.5 VBEsat - - 0.9 50 - - MHz - - 4 pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency fT IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Feb-21-2003 SMBTA42/MMBTA42 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V, f =100MHz 400 10 3 mW SMBTA 42/43 EHP00839 MHz fT 320 Ptot 280 240 10 2 200 160 5 120 80 40 0 0 15 30 45 60 75 10 1 10 0 °C 150 TS 90 105 120 5 10 1 5 10 2 mA 5 ΙC Permissible pulse load Operating range IC = f (VCEO) Ptotmax / PtotDC = f (tp ) TA = 25°C, D = 0 10 3 SMBTA 42/43 EHP00840 Ptot max 5 Ptot DC D= 10 3 SMBTA 42/43 EHP00841 mA tp tp T 10 3 ΙC T 10 2 10 2 5 10 1 10 µs 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 100 µs 1 ms 5 100 ms DC 10 5 500 ms 0 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 10 0 0 tp 5 10 1 5 10 2 V 5 10 3 V CEO 3 Feb-21-2003 SMBTA42/MMBTA42 Collector cutoff current ICBO = f (TA) Collector current IC = f (VBE) VCB = 160V VCE = 10V 10 4 nA Ι CBO 10 5 SMBTA 42/43 EHP00842 10 3 SMBTA 42/43 EHP00843 mA ΙC max 3 10 2 5 10 2 5 10 1 typ 10 1 5 5 10 0 10 5 0 5 10 -1 10 -1 0 50 0 C 150 100 0.5 V 1.0 1.5 V BE TA DC current gain hFE = f (IC ) VCE = 10V 10 3 SMBTA 42/43 EHP00844 5 h FE 10 2 5 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 4 Feb-21-2003