BC857BL3, BC858BL3 PNP Silicon AF Transistors Preliminary data • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 (NPN) Type Marking Pin Configuration Package BC857BL3 3F 1=B 2=E 3=C TSLP-3-1 BC858BL3 3K 1=B 2=E 3=C TSLP-3-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC857BL3 45 BC858BL3 30 Collector-emitter voltage Unit VCES BC857BL3 50 BC858BL3 30 Collector-base voltage VCBO BC857BL3 50 BC858BL3 30 Emitter-base voltage VEBO BC857BL3 5 BC858BL3 5 Collector current IC 100 mA Peak collector current ICM 200 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS TS ≤ 138°C -65 ... 150 Value ≤ 50 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-30-2004 BC857BL3, BC858BL3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BC857BL3 45 - - IC = 10 mA, IB = 0 , BC858BL3 30 - - IC = 10 µA, IE = 0 , BC857BL3 50 - - IC = 10 µA, IE = 0 , BC858BL3 30 - - IC = 10 µA, VBE = 0 , BC857BL3 50 - - IC = 10 µA, VBE = 0 , BC858BL3 30 - - 5 - - Collector-base breakdown voltage Unit V(BR)CBO Collector-emitter breakdown voltage V(BR)CES Emitter-base breakdown voltage V(BR)EBO IE = 0 , IC = 1 µA Collector-base cutoff current nA I CBO VCB = 30 V, IE = 0 - - 15 VCB = 30 V, IE = 0 , TA = 150 °C - - 5 DC current gain- - hFE IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 220 290 475 Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base emitter saturation voltage-1) VBEsat Base-emitter voltage-1) VBE(ON) 2 Jan-30-2004 BC857BL3, BC858BL3 AC Characteristics Transition frequency fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µS IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz 3 Jan-30-2004 BC857BL3, BC858BL3 DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat), hFE = 20 EHP00382 10 3 h FE 5 EHP00380 10 2 mA ΙC 100 C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 0 10 -1 2 0 0.1 0.2 0.4 0.3 V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA) IC = ƒ(V BEsat), h FE = 20 VCBO = 30 V EHP00379 10 2 mA ΙC EHP00381 10 4 nA Ι CB0 10 10 3 100 C 25 C -50C 1 5 max 10 2 5 5 typ 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C 150 TA 4 Jan-30-2004 BC857BL3, BC858BL3 Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance CCB= ƒ (VCB0) Emitter-base capacitance CEB= ƒ (VEB0) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856...860 EHP00376 10 8 10 2 C EBO 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 0 10 -1 10 2 5 10 0 V ΙC VCB0 h parameter he = ƒ(IC) normalized VCE = 5V 10 2 he BC 856...860 h parameter he = ƒ(V CE) normalized IC = 2mA EHP00383 2.0 5 10 1 BC 856...860 he EHP00384 Ι C = 2 mA h 11 1.5 VCE = 5 V h 11e 10 1 (VEB0 ) 5 1.0 h 12e h12 10 0 5 h 22 0.5 h 21e h 22e 10 -1 10 -1 0 5 10 0 mA 10 1 ΙC 0 10 20 V 30 VCE 5 Jan-30-2004