INFINEON BC858BL3

BC857BL3, BC858BL3
PNP Silicon AF Transistors
Preliminary data
• For AF input stages and driver applications
3
• High current gain
• Low collector-emitter saturation voltage
1
• Complementary types: BC847BL3,
2
BC848BL3 (NPN)
Type
Marking
Pin Configuration
Package
BC857BL3
3F
1=B
2=E
3=C
TSLP-3-1
BC858BL3
3K
1=B
2=E
3=C
TSLP-3-1
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC857BL3
45
BC858BL3
30
Collector-emitter voltage
Unit
VCES
BC857BL3
50
BC858BL3
30
Collector-base voltage
VCBO
BC857BL3
50
BC858BL3
30
Emitter-base voltage
VEBO
BC857BL3
5
BC858BL3
5
Collector current
IC
100
mA
Peak collector current
ICM
200
Total power dissipation
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
TS ≤ 138°C
-65 ... 150
Value
≤ 50
Unit
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jan-30-2004
BC857BL3, BC858BL3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CEO
IC = 10 mA, IB = 0 , BC857BL3
45
-
-
IC = 10 mA, IB = 0 , BC858BL3
30
-
-
IC = 10 µA, IE = 0 , BC857BL3
50
-
-
IC = 10 µA, IE = 0 , BC858BL3
30
-
-
IC = 10 µA, VBE = 0 , BC857BL3
50
-
-
IC = 10 µA, VBE = 0 , BC858BL3
30
-
-
5
-
-
Collector-base breakdown voltage
Unit
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CES
Emitter-base breakdown voltage
V(BR)EBO
IE = 0 , IC = 1 µA
Collector-base cutoff current
nA
I CBO
VCB = 30 V, IE = 0
-
-
15
VCB = 30 V, IE = 0 , TA = 150 °C
-
-
5
DC current gain-
-
hFE
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
220
290
475
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base emitter saturation voltage-1)
VBEsat
Base-emitter voltage-1)
VBE(ON)
2
Jan-30-2004
BC857BL3, BC858BL3
AC Characteristics
Transition frequency
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
3
Jan-30-2004
BC857BL3, BC858BL3
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V
IC = ƒ(VCEsat), hFE = 20
EHP00382
10 3
h FE
5
EHP00380
10 2
mA
ΙC
100 C
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5
10 -1
5 10
0
5 10
1
mA 10
ΙC
0
10 -1
2
0
0.1
0.2
0.4
0.3
V 0.5
VCEsat
Base-emitter saturation voltage
Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(V BEsat), h FE = 20
VCBO = 30 V
EHP00379
10 2
mA
ΙC
EHP00381
10 4
nA
Ι CB0
10
10 3
100 C
25 C
-50C
1
5
max
10 2
5
5
typ
10 1
5
10 0
5
10
0
5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
0
50
100
C
150
TA
4
Jan-30-2004
BC857BL3, BC858BL3
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance CCB= ƒ (VCB0)
Emitter-base capacitance CEB= ƒ (VEB0)
EHP00378
10 3
C CB0
( C EB0 )
MHz
fT
5
12
pF
BC 856...860
EHP00376
10
8
10 2
C EBO
6
5
4
C CBO
2
10 1
10 -1
5 10 0
5
10 1
mA
0
10 -1
10 2
5
10 0
V
ΙC
VCB0
h parameter he = ƒ(IC) normalized
VCE = 5V
10 2
he
BC 856...860
h parameter he = ƒ(V CE) normalized
IC = 2mA
EHP00383
2.0
5
10 1
BC 856...860
he
EHP00384
Ι C = 2 mA
h 11
1.5
VCE = 5 V
h 11e
10 1
(VEB0 )
5
1.0
h 12e
h12
10 0
5
h 22
0.5
h 21e
h 22e
10 -1
10 -1
0
5
10 0
mA
10 1
ΙC
0
10
20
V
30
VCE
5
Jan-30-2004