INTEGRATED CIRCUITS DATA SHEET TEA1064A Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting Product specification File under Integrated Circuits, IC03A March 1994 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PACKAGE OUTLINES GENERAL DESCRIPTION TEA1064A :20-lead DIL; plastic (SOT146).(1) The TEA1064A is a bipolar integrated circuit that performs all the speech and line interface functions required in fully electronic telephone sets. It performs electronic switching between dialling and speech and has a powerful DC supply for peripheral circuits. The IC operates at line voltages down to 1.8 V DC (with reduced performance) to facilitate the use of more telephone sets connected in parallel. The transmit signal on the line is dynamically limited (speech-controlled) to prevent distortion at high transmit levels of both the sending signal and the sidetone. TEA1064AT:20-lead mini-pack; plastic (SO20; SOT163A).(2) Notes 1. SOT146-1; 1998 Jun 18. 2. SOT163-1; 1998 Jun 18. FEATURES • Low DC line voltage; operates down to 1.8 V (excluding polarity guard) • Voltage regulator with low voltage drop and adjustable static resistance • DC line voltage adjustment facility • Provides a supply for external circuits in two options: unregulated supply, regulated line voltage; stabilized supply, line voltage varies with supply current • Dynamic limiting (speech-controlled) in transmit direction prevents distortion of line signal and sidetone • Symmetrical high-impedance inputs (64 kΩ) for dynamic, magnetic or piezo-electric microphones • Asymmetrical high-impedance input (32 kΩ) for electret microphones • DTMF signal input • Confidence tone in the earpiece during DTMF dialling • Mute input for disabling speech during pulse or DTMF dialling • Power-down input for improved performance during pulse dial or register recall (flash) • Receiving amplifier for magnetic, dynamic or piezo-electric earpieces • Large amplification setting ranges on microphone and earpiece amplifiers • Line loss compensation (line current dependent) for microphone and earpiece amplifiers (not used for DTMF amplifier) • Gain control curve adaptable to exchange supply • Automatic disabling of the DTMF amplifier in extremely-low voltage conditions • Microphone MUTE function available with switch March 1994 TEA1064A 2 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A VCC1 handbook, full pagewidth LN 16 1 6 13 GAR IR − TEA1064A + + 5 − 4 19 MIC+ MIC− DTMF MUTE PD 9 + 8 − 2 dB VCC2 GAS1 + 3 − GAS2 14 15 SUPPLY AND REFERENCE AGC CIRCUIT CURRENT REFERENCE 11 VEE 17 REG 18 AGC LOW VOLTAGE CIRCUIT DYNAMIC LIMITER START CIRCUIT 10 STAB 7 DLS/MMUTE Fig.1 Block diagram. March 1994 QR− − + 12 QR+ 3 20 SLPE MGR056 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Operating ambient temperature Tamb −25 − + 75 °C normal operation lline 11 − 140(1) mA with reduced performance lline 2 − 11 mA range Line current operating range: Internal supply current: power-down input LOW VCC1 = 2.8 V ICC1 − 1.3 1.6 mA power-down input HIGH VCC1 = 2.8 V ICC1 − 60 82 µA microphone amplifier Gv 44 − 52 dB receiving amplifier Gv 20 − 45 dB Gv 5.7 6.1 6.5 dB Vexch 36 − 60 V Rexch 400 − 1000 Ω Ip = 2 mA VLN(p-p) 3.7 3.95 4.2 V Ip = 4 mA VLN(p-p) 3.0 3.25 3.5 V Vp 2.5 − − V Vp 2.9 − − V without RREG-SLPE VLN − 3.57 − V RREG-SLPE = 20 kΩ VLN − 4.57 − V Voltage gain range: Line loss compensation: gain control range exchange supply voltage range exchange feeding bridge resistance range Maximum output voltage swing on LN (peak-to-peak value) R15 + R16 = 448 Ω lline = 15 mA Regulated line voltage application R15 = 0 Ω; R16 = 392 Ω Supply for peripherals lline = 15 mA Ip = 1.4 mA Ip = 2.7 mA; RREG-SLPE = 20 kΩ DC line voltage March 1994 lline = 15 mA 4 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PARAMETER CONDITIONS SYMBOL MIN. TEA1064A TYP. MAX. UNIT Stabilized supply voltage application R15 = 392 Ω; R16 = 56 Ω Supply for peripherals lline = 15 mA Ip = 0 to 4 mA VCC2-SLPE 3.05 3.3 3.55 V Ip = 2 mA VLN 4.2 4.4 4.8 V Ip = 4 mA VLN 4.9 5.1 5.5 V lline = 15 mA DC line voltage Note 1. For TEA1064AT the maximum line current depends on the heat dissipating qualities of the mounted device. PINNING handbook, halfpage positive line terminal 2 GAS1 gain adjustment; transmitting amplifier 3 GAS2 gain adjustment; transmitting amplifier 4 QR− inverting output, receiving amplifier 5 QR+ non-inverting output, receiving amplifier LN 1 20 SLPE GAS1 2 19 VCC2 GAS2 3 18 AGC QR− 4 17 REG 6 GAR gain adjustment; receiving amplifier 16 VCC1 7 DLS/ MMUTE decoupling for transmit amplifier dynamic and microphone MUTE input 8 MIC− inverting microphone input 9 MIC+ non-inverting microphone input QR+ 5 TEA1064A GAR 6 15 PD DLS/MMUTE 7 14 MUTE MIC− 8 13 IR 10 STAB current stabilizer MIC+ 9 12 DTMF 11 VEE negative line terminal STAB 10 11 VEE 12 DTMF dual-tone multi-frequency input 13 IR receiving amplifier input 14 MUTE mute input 15 PD power-down input 16 VCC1 internal supply decoupling 17 REG voltage regulator decoupling 18 AGC automatic gain control input 19 VCC2 reference voltage with respect to SLPE 20 SLPE slope adjustment for DC curve/reference for peripheral circuits. MGR057 Fig.2 Pinning diagram. March 1994 1 LN 5 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A FUNCTIONAL DESCRIPTION The reference voltage can be used to: Supplies VCC1, VCC2, LN, SLPE, REG and STAB (Fig.3) • regulate directly the line voltage (stabilized VLN-SLPE = VCC2-SLPE)(1) Power for the TEA1064A and its peripheral circuits is usually obtained from the telephone line. The IC develops its own supply voltage at VCC1 and regulates its voltage drop. The internal supply requires a decoupling capacitor between VCC1 and VEE. The internal current stabilizer is set by a 3.6 kΩ resistor between STAB and VEE. • to stabilize the supply voltage for peripherals. Regulated line voltage In this application the VCC2 pin is connected to the LN pin as shown in Fig.3. This configuration gives a stabilized voltage across pins LN and SLPE which, applied via the low-pass filter R16, C15, provides a supply to the peripherals that is independent of the line current and depends only on the peripheral supply current. The DC current flowing into the set is determined by the exchange supply voltage Vexch, the feeding bridge resistance Rexch, the subscriber line DC resistance Rline and the DC voltage (including polarity guard) on the subscriber set (see Fig.3). The value of R16 and the level of the DC voltage VLN-SLPE determine the supply capabilities. In the basic application R16 = 392 Ω and C15 = 220 µF. The worst-case peripheral supply current as a function of supply voltage is shown in Fig.4. To increase the supply capabilities, the DC voltage VLN-SLPE can be increased by using RVA(REG-SLPE) or by decreasing the value of R16. The internal voltage regulator generates a temperature-compensated reference voltage that is available between VCC2 and SLPE [Vref = VCC2-SLPE = 3.3 V (typ.)]. This internal voltage regulator requires decoupling by a capacitor between REG and VEE (C3). (1) The TEA1064A application with regulated line voltage is the same as is used for TEA1060/TEA1061, TEA1067 and TEA1068 integrated circuits. Ip + 0.25 mA handbook, full pagewidth Rline R1 Iline ISLPE ICC1 VCC1 LN Rexch 1 TEA1064A 16 19 VCC2 0.25 mA DC AC Vexch 17 10 REG C3 STAB 20 11 SLPE VEE R5 C1 R16 Ip C15 R9 peripheral circuits MGR058 The voltage VLN-SLPE is fixed to Vref = 3.3 ± 0.25 V. Resistor R16 together with the line current determine the supply capabilities and the maximum output swing on the line (no loop damping is necessary). The line voltage VLN = Vref + ([Iline − 1.55 mA] × R9). Fig.3 Application with regulated line voltage (stabilized VLN-SLPE). March 1994 6 Vp Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A The DC line voltage on LN is: VLN = VLN-SLPE + (ISLPE × R9) MGR059 5 VLN = Vref + ([Iline − ICC1 − 0.25 × 10−3 A] × R9) handbook, halfpage Ip (mA) in which 4 RV 3 Vref = 3.3 V ± 0.25 V is the internal reference voltage between VCC2 and SLPE; its value can be adjusted by external resistor RVA A R9 = external resistor between SLPE and VEE (20 Ω in basic application). (R -S EG 2 LP E) VLN = 3.57 ± 0.25 V at lline = 15 mA kΩ 3 2 20 t E) ou SLP th wi EG(R 0 = A RV 1 With R9 = 20 Ω, this results in: VLN = 4.17 ± 0.3 V at lline = 15 mA, RVA(REG-SLPE) = 33 kΩ 4 VLN = 4.57 ± 0.35 V at lline = 15 mA, RVA(REG-SLPE) = 20 kΩ Vp (V) The preferred value for R9 is 20 Ω. Changing R9 influences microphone gain, DTMF gain, the gain control characteristics, sidetone, and the DC characteristics (especially the low voltage characteristics). lline = 15 mA; R16 = 392 Ω; R15 = 0 Ω; valid for MUTE = 0 and 1. Line current has very little influence Fig.4 Minimum supply current for peripherals (Ip) as a function of the peripheral supply voltage (Vp). In normal conditions, ISLPE >> (ICC1 + 0.25 mA) and the static behaviour is equivalent to a voltage regulator diode with an internal resistance of R9. In the audio frequency range the dynamic impedance is determined mainly by R1. The equivalent impedance of the circuit in the audio frequency range is shown in Fig.6. The maximum AC output swing on the line at low line currents is influenced by R16 (limited by current) and the maximum output swing on the line at high line currents is influenced by the DC voltage VLN-SLPE (limited by voltage). In both these situations, the internal dynamic limiter in the sending channel prevents distortion when the microphone input is overdriven. The maximum AC output swing on LN is shown in Fig.5; practical values for R16 are from 200 to 600 Ω and this influences both the maximum output swing at low line currents and the supply capabilities. The internal reference voltage VCC2-SLPE can be increased by external resistor RVA(REG-SLPE) connected between REG and SLPE. The supply voltage VCC2-SLPE is shown as a function of RVA(REG-SLPE) in Fig.7. Changing the reference voltage influences the output swing of both sending and receiving amplifiers. At line currents below 8 mA (typ.), the DC voltage dropped across the circuit is adjusted to a lower level automatically (approximately 1.8 V at 2 mA). This gives the possibility of operating more telephone sets in parallel with DC line voltages (excluding polarity guard) down to an absolute minimum of 1.8 V. At line currents below 8 mA (typ.), the circuit has limited sending and receiving levels. The SLPE pin is the ground reference for peripheral circuits, therefore inputs MUTE, PD and DTMF are also referenced to SLPE. Active microphones can be supplied between VCC1 and VEE. Low-power circuits that provide only MUTE and/or PD inputs to the TEA1064A also can be powered from VCC1. However VCC1 cannot be used for circuits that provide DTMF signals to the TEA1064A because VCC1 is referred to ground. If the line current lline exceeds ICC1 + 0.25 mA, the voltage converter shunts the excess current to SLPE via LN; where ICC1 ≈ 1.3 mA, the value required by the IC for normal operation. March 1994 7 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A MGR060 6 handbook, halfpage VLN(p-p) LN handbook, halfpage (V) Leq 4 Vref REG R9 20 Ω C3 4.7 µF Ip = 0 mA 2 mA 4 mA 2 R1 Rp VCC1 C1 MGR061 0 10 20 Iline (mA) 30 Fig.6 Fig.5 Maximum AC output swing on the line as a function of line current with peripheral supply current as a parameter: R15 = 0 Ω; R16 = 392 Ω. handbook, full pagewidth VEE Equivalent impedance between LN and VEE in the application with stabilized VLN-SLPE: R15 = 0 Ω Leq = C3 × R9 × Rp Rp = 15 kΩ MGR062 7.8 Vref (V) 6.6 5.4 4.2 with RVA infinite 3.0 Fig.7 0 40 80 RVA (REG-SLPE) (kΩ) 120 Internal reference voltage VCC2-SLPE as a function of resistor RVA(REG-SLPE) for line currents between 11 and 140 mA. In the stabilized supply application: VLN = VCC2-SLPE + ([Ip + 0.25 × 10−3 A] × R15) + ([Iline − 1.55 × 10−3 A] × R9) In the unregulated supply application (R15 = 0 Ω): VLN = VCC2-SLPE + ([Iline − 1.55 × 10−3 A] × R9) March 1994 8 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting Stabilized peripheral supply voltage TEA1064A the values of external components (especially R15). With R15 = 392 Ω and R16 = 56 Ω (basic application) the maximum possible AC output swing on the line as a function of line current is as shown in Fig.9, the curve parameter is the peripheral supply current (Ip). Different values for R15 (from 200 to 600 Ω) maintaining 6 < R15/R16 < 8 give different results (these are described in the TEA1064A Application Report (1). The configuration shown in Fig.8 provides a stabilized voltage across pins VCC2 and SLPE for peripheral circuits (such as dialling and control circuits); the DC voltage VLN now varies with the peripheral supply current. The VCC2-SLPE supply must be decoupled by capacitor C15. For stable loop operation, resistor R16 (≈ 50 Ω) is connected between VCC2 and SLPE in series with C15. The voltage regulator control loop is completed by resistor R15 between LN and VCC2. For sets with an impedance of 600 Ω, practical values are: R15 = 200 to 600 Ω; C15 = 220 µF; C3 = 470 nF. The ratio R15/R16 ≤ 8 is for stable loop operation with sufficient phase margin, and R15/R16 ≥ 6 is for satisfactory set impedance in the audio frequency range. For sets with complex impedance, the value of C3 and the ratio R15/R16 are different (further information is given in the TEA1064A Application Report(1)). The peripheral supply capability depends mainly on the available line current, the required AC output swing on the line, the maximum permitted DC voltage on the line and (1) Supplied on request. Ip + 0.25 mA R15 handbook, full pagewidth Rline R1 Iline ISLPE ICC1 VCC1 LN Rexch 1 TEA1064A 16 19 VCC2 0.25 mA DC AC Vexch 17 10 REG C3 STAB 20 11 SLPE VEE R5 C1 R16 Ip C15 R9 peripheral circuits Vp MGR063 Fig.8 Application with stabilized supply voltage for peripheral circuits: R15 = 392 Ω; R16 = 56 Ω. March 1994 9 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A The DC line voltage on LN is MGR065 VLN = VLN-SLPE + (ISLPE × R9). 5.5 handbook, halfpage VLN-SLPE Therefore (V) VLN = Vref + ([Ip + 0.25 × 10−3 A] × R15) + ([lline − ICC1 − 0.25 × 10−3 A] × R9) 5.0 R15 = 511 Ω 392 Ω in which: 4.5 301 Ω Vref is the internal reference voltage between VCC2 and SLPE (the value of Vref can be adjusted by an external resistor, RVA). Vref = 3.3 V (typ.) without RVA 4.0 Ip is the supply current used by peripheral circuits R15 is an external resistor between LN and VCC2 (392 Ω in the basic application) 3.5 R9 is an external resistor between SLPE and VEE (20 Ω in the basic application) 3.0 0 handbook, halfpage (V) 6 2 mA Ip (mA) 0 mA 4 LN handbook, halfpage 2 Leq 0 10 20 Iline (mA) R9 20 Ω 30 Req C3 470 nF As different values of R15 and R16 are allowed, different curves would then apply Fig.9 3 R1 620 Ω MGR066 Maximum output swing on line as a function of line current with the peripheral supply current as a parameter; R15 = 392 Ω; R16 = 56 Ω. VEE R15 R eq = R p ----------- + 1 R16 L eq = C3 × R9 × R eq with R p = 15 kΩ Fig.11 Equivalent impedance between LN and VEE at f > 300 Hz in the application with stabilized supply voltage for peripheral circuits. The DC voltage VLN-SLPE as a function of Ip with R15 as a parameter is shown in Fig.10. In the audio frequency range, the dynamic impedance is determined mainly by R1. The equivalent impedance in the audio range of the circuit (Fig.8) is shown in Fig.11. March 1994 4 Fig.10 Curves showing the typical voltage drop between LN and SLPE as a function of the supply current for peripherals with R15 as a parameter: VCC2-SLPE = 3.3 V (RVA not connected). Ip = 4 mA VLN(p-p) 2 VCC2-SLPE can be adjusted between approximately 3.3 and 4.3 V by changing the value of RVA, this results in a parallel-shift of the curves. The total voltage drop VLN ≈ VLN-SLPE + ([Iline − 1.55 mA] × R9). MGR064 8 1 10 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A The gain of the microphone amplifier is proportional to external resistor R7 connected between GAS1 and GAS2 and with this it can be adjusted between 44 dB and 52 dB to suit the sensitivity of the transducer. Microphone inputs MIC+ and MIC− and gain pins GAS1 and GAS2 The TEA1064A has symmetrical microphone inputs, its input impedance is 64 kΩ (2 × 32 kΩ) and its voltage amplification is typ. 52 dB with R7 = 68 kΩ. Either dynamic, magnetic or piezo-electric microphones can be used, or an electret microphone with a built-in FET buffer. Arrangements for the microphone types are shown in Fig.12. An external 100 pF capacitor (C6) is required between GAS1 and SLPE to ensure stability. A larger value of C6 may be chosen to obtain a first-order low-pass filter with a cut-off frequency corresponding to the time constant R7 × C6. handbook, full pagewidth VCC1 MIC+ 16 MIC− 9 MIC+ 9 8 (1) MIC− MIC+ 8 MIC− 9 8 11 VEE MGR067 (a) (c) (b) Fig.12 Microphone arrangements: a) magnetic or dynamic microphone, the resistor (1) may be connected to reduce the terminating impedance, or for sensitive types a resistive attenuator can be used to prevent overloading the microphone inputs; b) electret microphone; c) piezo-electric microphone. means that the maximum output swing on the line will be higher if the DC voltage dropped across the circuit is increased. Dynamic limiter (microphone) pin DLS/MMUTE A low level at the DLS/MMUTE pin inhibits the microphone inputs MIC+ and MIC− but has no influence on the receiving and DTMF amplifiers. Removing the low level at the DLS/MMUTE pin provides the normal function of the microphone amplifier after a short time determined by the capacitor connected to DLS/MMUTE pin. The microphone mute function can be realised by a simple switch as shown in Fig.13. Fig.14 shows the maximum possible output swing on the line as a function of the DC voltage drop (VLN-SLPE) with Iline − Ip as a parameter. handbook, halfpage DLS/MMUTE To prevent distortion of the transmitted signal, the gain of the sending amplifier is reduced rapidly when peaks of the signal on the line exceed an internally-determined threshold. The time in which gain reduction is effected (attack time) is very short. The circuit stays in the gain-reduced condition until the peaks of the sending signal remain below the threshold level. The sending gain then returns to normal after a time determined by the capacitor connected to DLS/MMUTE (release time). R17 3.3 kΩ VEE 11 MGR068 The internal threshold adapts automatically to the DC voltage setting of the circuit (voltage VLN-SLPE). This March 1994 7 Fig.13 Microphone-mute function. 11 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting MGR069 10 handbook, full pagewidth TEA1064A Iline-Ip VLN(p-p) (mA) (V) 8 25 23 21 6 19 17 15 13 4 11 2 0 3 3.5 4 4.5 5.5 5 VLN-VSLPE (V) Fig.14 Maximum output swing on line as a function of the DC voltage drop VLN-SLPE with lline − Ip as a parameter: R15 = 392 Ω; R16 = 56 Ω; or R15 = 0 Ω and R16 = 392 + 56 = 448 Ω. The internal threshold level is lowered automatically if the DC current in the transmit output stage is insufficient. This prevents distortion of the sending signal in applications using parallel-connected telephones or telephones operating over long lines, for example. Receiving amplifier IR, QR+, QR− and GAR The receiving amplifier has one input IR and two complementary outputs, QR+ (non-inverting) and QR− (inverting). These outputs may be used for single-ended or differential drive, depending on the type and sensitivity of the earpiece used (see Fig.15). Gain from IR to QR+ is typically 31 dB with R4 = 100 kΩ, sufficient for low-impedance magnetic or dynamic earpieces which are suitable for single-ended drive. By using both outputs (differential drive) the gain is increased by 6 dB. Differential drive can be used when the earpiece impedance exceeds 450 Ω as with high-impedance dynamic, magnetic or piezo-electric earpieces. Dynamic limiting also considerably improves sidetone performance in over-drive conditions (less distortion; limited sidetone level). handbook, full pagewidth 5 4 11 QR+ 5 QR+ 5 QR+ (1) 5 QR+ (2) QR− VEE 4 QR− 4 QR− 4 QR− MGR070 (a) (b) (c) (d) Fig.15 Alternative receiver arrangements: a) dynamic earpiece with an impedance less than 450 Ω; b) dynamic earpiece with an impedance more than 450 Ω; c) magnetic earpiece with an impedance more than 450 Ω, resistor (1) may be connected to prevent distortion (inductive load); d) piezo-electric earpiece, resistor (2) is required to increase the phase margin (stability with capacitive load). March 1994 12 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting The output voltage of the receiving amplifier is specified for continuous-wave drive. Fig.16 shows the maximum output swing of the receiving amplifier as a function of the DC voltage drop (VLN). The maximum output voltage will be higher under speech conditions, where the ratio of the peak to the RMS value is higher. TEA1064A Two external capacitors (C4 =100 pF and C7 = 10 × C4 = 1 nF) ensure stability. A larger value may be chosen to obtain a first-order low-pass filter. The cut-off frequency corresponds with the time constant R4 × C4. The relationship C7 = 10 × C4 must be maintained. The gain of the receiving amplifier can be adjusted to suit the sensitivity of the transducer used. The adjustment range is between 20 dB and 39 dB with single-ended drive and between 26 dB and 45 dB with differential drive. The gain is proportional to the external resistor R4 connected between GAR and QR+. The overall gain between LN and QR+ can be found by subtracting the attenuation of the anti-sidetone network (32 dB) from the amplifier gain. MGR071 1.5 handbook, halfpage VQR(rms) (V) (1) 1.0 (2) 0.5 (3) Curve (1) is for a differential load of 47 nF (series resistance = 100 Ω); f = 3400 Hz. Curve (2) is for a differential load of 450 Ω; f = 1 kHz. Curve (3) is for a single-ended load of 150 Ω; f = 1 kHz. 0 3 4 5 VLN (V) 6 Fig.16 Maximum output swing of the receiving amplifier as a function of DC voltage drop VLN with the load at the receiver output as parameter: valid for both supply options; THD = 2%; Iline = 15 mA. The value of R6 must be chosen with reference to the exchange supply voltage and its feeding bridge resistance (see Fig.17 and Table 1). Different values of R6 give the same line current ratios at the start and the end of the control range. If automatic line-loss compensation is not required the AGC pin can be left open, the amplifiers then give their maximum gain. Automatic gain control input AGC Automatic compensation of line loss is obtained by connecting a resistor (R6) between AGC and VEE. This automatic gain control varies the gain of the microphone amplifier and receiving amplifier in accordance with the DC line current. The control range is 6.1 dB; this corresponds to a 5 km line of 0.5 mm diameter copper twisted-pair cable (DC resistance = 176 Ω/km, average attenuation = 1.2 dB/km). The DTMF gain is not affected by this feature. March 1994 13 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting handbook, full pagewidth ∆Avd (dB) R6 = ∞ 0 TEA1064A MGR072 −1 −2 −3 −4 −5 66.5 kΩ R6 = 93.1 kΩ 118 kΩ −6 10 20 30 40 50 60 70 80 Iline (mA) 90 Fig.17 Variation of gain as a function of line current with R6 as a parameter; R9 = 20 Ω. Table 1 setting the gain of the microphone amplifier. With R7 = 68 kΩ the gain is typically 26 dB. Values of R6 giving optimum line-loss compensation at various values of exchange supply voltage (Vexch) and exchange feeding bridge resistance (Rexch); R9 = 20 Ω. The signalling tones can be heard in the earpiece at a low level (confidence tone). Rexch (Ω) 400 600 800 Power-down input PD (see notes 1. and 2.) 1000 During pulse dialling or register recall (timed loop break) the telephone line is interrupted; as a consequence it provides no supply for the transmission circuit connected to VCC1 or for the peripherals between VCC2 and SLPE. These supply gaps are bridged by the charges in the capacitors C1 and C15. The requirements on these capacitors are eased by applying a HIGH level to the PD input during the time of the loop break. This reduces the internal supply current ICC1 from (typ.) 1.3 mA to (typ.) 60 µA and switches off the voltage regulator to prevent discharge via LN and VCC2. R6 (kΩ) Vexch (V) 36 84.5 66.5 X X 48 118 93.1 77.8 66.5 60 X X 97.6 84.5 MUTE input (see notes 1. and 2.) MUTE = HIGH enables the DTMF input and inhibits the microphone and receiving amplifier inputs. MUTE = LOW or open-circuit disables the DTMF input and enables the microphone and receiving amplifier inputs. A HIGH level at PD also internally disconnects the capacitor at REG so that the voltage stabilizer has no switch-on delay after line interruptions. This minimizes the contribution of the IC to the current waveform during pulse dialling or register recall. Switching MUTE gives negligible clicks at the telephone outputs and on the line. Dual-tone multi-frequency input DTMF (see note 1.) When the power-down facility is not required, the PD pin can be left open-circuit or connected to SLPE. When the DTMF input is enabled, dialling tones may be sent on to the line. The voltage gain between DTMF-SLPE and LN-VEE is typ. 26 dB less than the gain of the microphone amplifier and varies with R7 in the same way as the gain of the microphone amplifier. This means that the tone level at the DTMF input has to be adjusted after March 1994 Side-tone suppression Suppression of the transmitted signal in the earpiece is obtained by the anti-sidetone network comprising R1//Zline, 14 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting Example R2, R3, R8, R9 and Zbal (see Fig.18). Maximum compensation is obtained when the following conditions are fulfilled: a) R9 × R2 = R1 × (R3 + [R8//Zbal]) The line impedance for which optimum suppression is to be obtained can be represented by 210 Ω + (1265 Ω // 140 nF). This represents a 5 km line of 0.5 mm diameter copper twisted-pair cable matched with 600 Ω (176 Ω/km; 38 nF/km). b) (Zbal/[Zbal + R8]) = (Zline/[Zline + R1]) If fixed values are chosen for R1, R2, R3 and R9, then condition a) is always fulfilled provided R8//Zbal << R3. With k = 0.64 this results in: R8 = 390 Ω; Zbal = 130 Ω + (820 Ω // 220 nF). To obtain optimum sidetone suppression, condition b) has to be fulfilled, resulting in: Zbal = (R8/R1) × Zline = k × Zline The anti-sidetone network for the TEA1060 family shown in Fig.18 attenuates the signal received from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio-frequency range. where k is a scale factor; k = (R8/R1). The scale factor k (value of R8) is chosen to meet the following criteria: Alternatively a conventional Wheatstone bridge can be used as an anti-sidetone circuit (Fig.19). Both bridge types can be used with either resistive or complex set impedances. (More information on the balancing of anti-sidetone bridges can be obtained in our publication “Versatile speech transmission ICs for electronic telephone sets”, order number 9398 341 10011). • compatibility with a standard capacitor from the E6 or E12 range for Zbal; • Zbal//R8 << R3 to fulfil condition a) and thus ensure correct anti-sidetone bridge operation; • Zbal + R8 >> R9 to avoid influencing the transmit gain. In practice Zline varies considerably with the line length and line type. Therefore the value chosen for Zbal should be for an average line length giving satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. March 1994 TEA1064A Notes 1. The reference used for the MUTE, DTMF and PD inputs is SLPE. 2. A LOW level for any of these pins is defined by connection to SLPE, a HIGH level is defined as a voltage greater than VSLPE + 1.5 V and smaller than VCC1 + 0.4 V. 15 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A LN handbook, full pagewidth Zline R1 R2 IR im VEE Rt R3 R9 R8 Zbal SLPE MGR073 Fig.18 Equivalent circuit of TEA1060 family anti-side-tone bridge. LN handbook, full pagewidth Zline R1 Zbal IR im VEE Rt R9 R8 RA SLPE MGR074 Fig.19 Equivalent circuit of an anti-sidetone network in the Wheatstone bridge configuration. March 1994 16 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT VLN − 12 V VLN − 13.2 V (Fig.24) VLN − 28 V Line current TEA1064A (note 1) R9 = 20 Ω ILN − 140 mA Line current TEA1064AT (note 1) R9 = 20 Ω ILN − 140 mA Vi VEE−0.7 VCC1 + 0.7 V TEA1064A Ptot − 714 TEA1064AT Positive line voltage continuous Repetitive line voltage during switch-on line interruption Repetitive peak line voltage one 1 ms pulse per 5 s R9 = 20 Ω; R10 = 13 Ω Input voltage on pins other than LN and VCC2 Total power dissipation (note 2) R9 = 20 Ω mW Ptot − 555 mW Storage temperature range Tstg −40 + 125 °C Operating ambient temperature range Tamb −25 + 75 °C Junction temperature Tj − + 125 °C Notes 1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE. See Figs 20 and 21 to determine the current as a function of the required voltage and the temperature. 2. Calculated for the maximum ambient temperature specified Tamb = 75 °C and a maximum junction temperature of 125 °C. THERMAL RESISTANCE From junction to ambient in free air TEA1064A Rth j-a = 70 K/W TEA1064AT mounted on glass epoxy board 41 × 19 × 1.5 mm Rth j-a = 90 K/W March 1994 17 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A MGR075 160 LN (mA) 140 handbook, halfpage I 120 (1) 100 (2) (3) 80 (4) 60 Tamb Ptot (1) 45 °C 1143 mW (2) 55 °C 1000 mW (3) 65 °C 857 mW (4) 75 °C 714 mW 40 2 4 6 8 10 12 VLN-VSLPE (V) Fig.20 TEA1064A safe operating area. MSA546 150 LN (mA) 130 handbook, halfpage I 110 90 (1) (2) 70 (3) (4) 50 Tamb Ptot (1) 45 °C 888 mW (2) 55 °C 777 mW (3) 65 °C 666 mW (4) 75 °C 555 mW 30 2 4 6 8 10 12 VLN-VSLPE (V) Fig.21 TEA1064AT safe operating area. March 1994 18 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A CHARACTERISTICS Iline = 11 to 140 mA; VEE = 0 V; f = 800 Hz; Tamb = 25 °C; RL = 600 Ω; tested in the circuit of Fig.22 or 23); unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supplies LN, VCC1, VCC2 (pins 1, 16, 19) Reference DC voltage between VCC2 and SLPE Iline = 15 mA Ip = 0; 4 mA RVA not connected Variation with temperature VCC2-SLPE 3.05 3.3 3.55 V Iline = 15 mA VCC2-SLPE/∆T −3.0 −1.0 1.0 mV/K Iline = 100 mA ∆VCC2-SLPE − 60 − mV RVA = 33 kΩ VCC2-SLPE 3.6 3.8 4.2 V RVA = 20 kΩ VCC2-SLPE 3.95 4.2 4.65 V Ip = 0 mA VLN 3.4 3.6 4.0 V Ip = 2 mA VLN 4.2 4.4 4.8 V Variation with line current referred to 15 mA With RVA connected between REG and SLPE DC line voltage: voltage drop between LN and VEE MIC−, MIC+ inputs open; R15 = 392 Ω; without RVA at Iline = 15 mA Ip = 4 mA VLN 4.9 5.1 5.5 V at Iline = 100 mA Ip = 2 mA VLN − 6.1 7.0 V at Iline = 140 mA Ip = 2 mA VLN − 7.0 7.8 V Iline = 2 mA VLN − 1.8 − V Iline = 4 mA VLN − 2.2 − V Iline = 7 mA VLN − 3.2 − V Iline = 11 mA VLN − 3.5 − V PD = LOW ICC1 − 1.3 1.6 mA PD = HIGH ICC1 − 60 82 µA Zi 51 64 77 kΩ Voltage drop under low current conditions Ip = 0 mA Internal supply current ICC1: current into pin VCC1 VCC1 = 2.8 V Microphone inputs MIC−, MIC+ (pins 8, 9) Input impedance: differential single-ended Common mode rejection ratio March 1994 19 Zi 25.5 32.0 38.5 kΩ CMRR − 82 − dB Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PARAMETER Voltage gain (see Fig.22) CONDITIONS SYMBOL TEA1064A MIN. TYP. MAX. UNIT Iline = 15 mA; R7 = 68 kΩ Gv 51 52 53 dB f = 300 and 3400 Hz ∆Gvf −0.5 ± 0.1 + 0.5 dB − ± 0.2 − dB Zi 16.8 20.7 24.6 kΩ R7 = 68 kΩ Gv 25 26 27 dB f = 300 and 3400 Hz ∆Gvf −0.5 ± 0.1 + 0.5 dB f = 697 and 1633 Hz ∆Gvf −0.2 ± 0.05 + 0.2 dB ∆GvT − ± 0.2 0.5 dB ∆Gv −8 − +0 dB Vi(rms) = 3.6 mV VLN(p-p) 3.6 4.0 4.5 V Vi = 3.6 mV + 10 dB THD − 1.5 2.0 % Vi = 3.6 mV + 15 dB THD − 2.8 10.0 % Ip = 2 mA VLN(p-p) 3.7 3.95 4.2 V Ip = 4 mA VLN(p-p) 3.0 3.25 3.5 V VLN(p-p) − 2 − V VLN(p-p) − 1 − V Variation of Gv with frequency, referred to 0.8 kHz Variation of Gv with temperature, referred to 25 °C without R6; Iline = 50 mA; Tamb = −25 to + 75 °C ∆GvT DTMF input (pin 12) Input impedance Voltage gain (see Fig.22) Iline = 15 mA; Variation of Gv with frequency, referred to 0.8 kHz Variation of Gv with temperature, referred to 25 °C Iline = 50 mA; Tamb = −25 to + 75°C Gain adjustment inputs GAS1, GAS2 (pins 2, 3) Transmitting amplifier, gain adjustment range Sending amplifier output LN (pin 1) Dynamic limiter Output voltage swing (peak-to-peak value) Iline = 15 mA; R7 = 68 kΩ; Ip = 0 mA; Total harmonic distortion Output voltage swing (peak-to-peak value) Vi = 3.6 mV + 10 dB Ip = 0 mA; Iline = 7 mA Ip = 0 mA; Iline = 4 mA March 1994 20 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PARAMETER Dynamic behaviour of limiter CONDITIONS SYMBOL TEA1064A MIN. TYP. MAX. UNIT C16 = 470 nF attack time, Vmic jumps from tatt − 1.5 5.0 ms trel 50 150 − ms − −72 − dBmp Zi 17 21 25 kΩ Zo − 4 − Ω single-ended; RT = 300 Ω Gv 30 31 32 dB differential; RT = 600 Ω Gv 36 37 38 dB ∆Gvf −0.5 −0.2 0 dB ∆GvT − ± 0.2 − dB 2 mV to 40 mV release time, Vmic jumps from 40 mV to 2 mV Noise output voltage (RMS value) lline = 15 mA; R7 = 68 kΩ; 200 Ω between MIC− and MIC+; psophometrically weighted (P53 curve) Vno(rms) Receiving amplifier input IR (pin 13) Input impedance Receiving amplifier outputs QR− QR+ (pins 4, 5) Output impedance single-ended Voltage gain Fig.23; Iline = 15 mA; R4 = 100 kΩ Variation with frequency, referred to 0.8 kHz f = 300 and 3400 Hz Variation with temperature, referred to 25 °C without R6; Iline = 50 mA; Tamb = −25 to +75 °C Output voltage (RMS value) THD = 2%; sinewave drive; R4 = 100 kΩ; Iline = 15 mA single-ended; RT = 150 Ω differential; RT = 450 Ω Ip = 0 mA Vo(rms) − 0.22 − V Ip = 2 mA Vo(rms) − 0.35 − V Ip = 0 mA Vo(rms) − 0.39 − V Ip = 2 mA Vo(rms) − 0.64 − V Ip = 0 mA Vo(rms) − 0.57 − V Ip = 2 mA Vo(rms) − 0.9 − V differential; CT = 47 nF; (100 Ω series resistor); f = 3400 Hz March 1994 21 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PARAMETER Output voltage (RMS value) CONDITIONS SYMBOL TEA1064A MIN. TYP. MAX. UNIT Ip = 0 mA; THD = 10%; sinewave drive; R4 = 100 kΩ; single-ended; RT = 150 Ω; Iline = 4 mA Vo(rms) − 25 − mV Iline = 7 mA Vo(rms) − 160 − mV Vno(rms) − 45 − µV Vno(rms) − 90 − µV R7 = 68 kΩ Vno(rms) − 100 − µV R7 = 24.9 kΩ Vno(rms) − 65 − µV ∆Gv −11 − +8 dB Input voltage HIGH VIH 1.5 + VSLPE − VCC1 + 0.4 V Input voltage LOW VIL 0 − 0.3 + VSLPE V Input current Imute − 11 20 µA −∆Gv − 100 − dB Noise output voltage (RMS value) Iline = 15 mA; R4 = 100 kΩ; psophometrically weighted (P53 curve); pin IR open single-ended; RT = 300 Ω; differential; RT = 600 Ω Noise output voltage (RMS value) in circuit of Fig.23; S1 in position 2; 200 Ω between MIC+ and MIC−; single-ended; RT = 300 Ω Gain adjustment input GAR (pin 6) Receiving amplifier, gain adjustment range MUTE INPUT (pin 14) Change of microphone amplifier gain at mute-ON March 1994 MUTE = HIGH 22 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting PARAMETER CONDITIONS SYMBOL TEA1064A MIN. TYP. MAX. UNIT Voltage gain from input DTMF-SLPE to QR+ output with mute-ON MUTE = HIGH; single-ended load; RL = 300 Ω Gv − −18 − dB Input voltage HIGH VIH 1.5 + VSLPE − VCC1 + 0.4 V Input voltage LOW VIL 0 − 0.3 + VSLPE V Input current IPD − 5 10 µA −Gv 5.7 6.1 6.5 dB Iline − 24 − mA Iline − 61 − mA −∆Gv 0.9 1.4 1.9 dB VIL VEE − VEE + 0.3 V IIL −85 −60 −35 µA trel − 30 − ms −∆Gv − 100 − dB Power-down input PD (pin 15) Automatic gain control input AGC (pin 18) Controlling the gain from IR (pin 13) to QR+, QR− (pins 4, 5) and the gain from MIC+, MIC− (pins 8, 9) to LN (pin 1) R6 = 93.1 kΩ (between pins 18 and 11) gain control range with respect to Iline = 15 mA Iline = 75 mA Highest line current for maximum gain Lowest line current for minimum gain Change of gain between Iline = 15 and 35 mA Microphone mute input DLS/MMUTE (pin 7) Input voltage low Input current at low input voltage Release time after a low level on pin 7 C16 = 470 nF Change of microphone amplifier gain at low input voltage on pin 7 March 1994 23 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A R15 andbook, full pagewidth 392 Ω R1 19 Iline 620 Ω 16 1 VCC2 VCC1 13 IR R16 56 Ω 9 Vi C1 LN QR− MIC+ QR+ 8 4 100 µF 5 RL 600 Ω MIC− 100 µF 12 GAR TEA1064A DTMF 6 R4 100 kΩ Vo C4 100 pF C7 1 nF 14 15 Ip 10 µF C15 220 µF Vi 7 11 to 140 mA MUTE GAS1 2 PD DLS/MMUTE VEE REG 11 C16 470 nF 17 C3 470 nF AGC STAB 18 R6 10 R5 3.6 kΩ GAS2 SLPE 3 R7 68 kΩ C6 100 pF 20 R9 20 Ω MGR076 For measuring the gain from MIC+ and MIC− the MUTE input should be LOW or open-circuit; for measuring the DTMF input, the MUTE input should be HIGH. Inputs not being tested should be open-circuit. Fig.22 Test circuit for defining voltage gain of MIC−, MIC+ and DTMF inputs; voltage gain (Gv) is defined as 20 log Vo / Vi . March 1994 24 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A R15 392 Ω R1 R2 130 kΩ 100 nF S1 2 R16 56 Ω 13 1 9 Iline 620 Ω 16 1 VCC2 VCC1 LN 19 QR− IR 8 100 µF 10 µF Vi R3 3.92 kΩ Ip C15 220 µF 12 7 820 Ω R8 390 Ω 220 nF 100 µF MIC− GAR TEA1064A DTMF Vo 5 6 R4 100 kΩ RL 600 Ω C4 100 pF C7 1 nF 14 15 130 Ω 10 µF ZT MIC+ QR+ C1 4 11 to 140 mA MUTE GAS1 2 PD DLS/MMUTE VEE REG 11 C16 470 nF AGC 17 18 C3 470 nF R6 STAB 10 R5 3.6 kΩ GAS2 SLPE 3 R7 68 kΩ C6 100 pF 20 R9 20 Ω handbook, full pagewidth MGR077 Fig.23 Test circuit for defining voltage gain of the receiving amplifier, voltage gain (Gv) is defined as 20 log Vo / Vi (with S1 in position 1). APPLICATION INFORMATION The basic application circuit is shown in Fig.24 and some typical applications are shown in Figs 25, 26 and 27. In the basic application, the circuit provides two possibilities for supplies to peripheral circuits: • regulated line voltage VLN (stabilized VLN-SLPE) and unregulated supply voltage for peripheral circuits, the supply voltage is dependent only on the peripheral supply current. This application is the same as that used for TEA1060/TEA1061, TEA1067 and TEA1068; • stabilized supply voltage for peripherals (VCC2-SLPE), the DC line voltage depends on the current flowing to the peripheral circuits. March 1994 25 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 620 Ω R10 13 Ω 1 R2 130 kΩ BAS11 (2×) C5 13 C1 100 µF IR VCC2 100 nF 4 telephone BZW14 line (2×) 16 VCC1 LN R16 56 Ω QR− + R13 R3 3.92 kΩ 5 DTMF QR+ C4 100 pF R4 100 kΩ C7 MUTE TEA1064A 6 GAR PD 1 nF 9 15 C15 220 µF 26 DLS/MMUTE MIC− SLPE GAS1 GAS2 20 2 R8 390 Ω Zbal from dial and control circuits 14 MIC+ R14 8 12 C6 R9 20 Ω 100 pF 3 R7 68 kΩ REG AGC 17 C3 470 nF 18 R6 STAB 10 R5 3.6 kΩ 7 VEE − R17 3.3 kΩ 11 C16 470 nF MGR078 Product specification TEA1064A Fig.24 Basic application of the TEA1064A with stabilized supply for peripherals, shown here with a piezo-electric earpiece and DTMF dialling. The diode bridge and R10 limit the current into, and the voltage across, the circuit during line transients. A different protection arrangement is required for pulse dialling or register recall. Philips Semiconductors 392 Ω R1 Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting pagewidth March 1994 R15 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A For the basic application giving regulated line voltage the above circuit is changed as follows: − R15 must be short-circuited; − the value of R16 is changed to 392 Ω; − the value of C3 is changed to 4.7 µF. handbook, full pagewidth LN VDD VCC2 DTMF cradle contact TEA1064A MUTE PD VEE DTMF PCD3310 M FL VSS SLPE MGR079 telephone line BST76A Fig.25 Typical DTMF-pulse set application circuit (simplified) showing the TEA1064A with the CMOS bilingual dialling circuit PCD3310; the broken line indicates optional flash (register recall by timed loop break). handbook, full pagewidth LN VCC2 VDD DTMF cradle contact TEA1064A MUTE PD VEE SLPE M PCD332x FAMILY DP VSS MGR080 telephone line BST76A DP/flash Fig.26 Typical pulse dial set application circuit (simplified) showing the TEA1064A with one of the PCD332X family of CMOS interrupted current-loop dialling circuits. March 1994 27 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A handbook, full pagewidth LN VCC2 VDD DTMF cradle contact TEA1064A MUTE PD VEE SLPE TONE PCD3344 M DP VSS telephone line I2C-bus BST76A DP/flash PCF8577 16-DIGIT LCD LCD MODULE MGR081 Fig.27 Typical dual-standard (pulse and DTMF) feature phone application circuit (simplified) showing the TEA1064A and the PCD3344 CMOS telephone microcontroller with on-chip DTMF generator plus I2C-bus. March 1994 28 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A PACKAGE OUTLINES DIP20: plastic dual in-line package; 20 leads (300 mil) SOT146-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 11 20 pin 1 index E 1 10 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c mm 4.2 0.51 3.2 1.73 1.30 0.53 0.38 0.36 0.23 26.92 26.54 inches 0.17 0.020 0.13 0.068 0.051 0.021 0.015 0.014 0.009 1.060 1.045 D e e1 L ME MH w Z (1) max. 6.40 6.22 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 2.0 0.25 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.078 (1) E (1) Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 March 1994 REFERENCES IEC JEDEC EIAJ SC603 29 EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-05-24 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC March 1994 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-24 97-05-22 30 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (order code 9398 652 90011). Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. DIP • The longitudinal axis of the package footprint must be parallel to the solder flow. SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. REPAIRING SOLDERED JOINTS A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. March 1994 TEA1064A 31 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting TEA1064A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1994 32 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting NOTES March 1994 33 TEA1064A Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting NOTES March 1994 34 TEA1064A Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface and transmit level dynamic limiting NOTES March 1994 35 TEA1064A Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 415102/00/02/pp36 Date of release: March 1994 Document order number: 9397 750 nnnnn