DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES PINNING • Low cost PIN • High power gain. DESCRIPTION PMBTH10 3 fpage Code: V30 1 base DESCRIPTION 2 emitter The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope. Its pnp complement is the PMBTH81. 3 collector 1 2 Top view MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3 V Ptot total power dissipation Ts = 45 °C (note 1) − 400 mW hFE DC current gain VCE = 10 V; IC = 4 mA 60 − Cre collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.7 pF Crb collector-base feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz 0.35 0.65 pF fT transition frequency VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C 650 − MHz rbCc collector-base time constant VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C − 9 ps LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 40 mA Ts = 45 °C (note 1) V Ptot total power dissipation − 400 mW Tstg storage temperature −65 150 °C Tj junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the collector tab. September 1995 2 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE from junction to soldering point (note 1) Rth j-s 260 K/W Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C. SYMBOL PARAMETER CONDITIONS MIN. MAX. open emitter; IC = 100 µA; IE = 0 30 collector-emitter breakdown voltage open base; IC = 1 mA; IB = 0 25 − V emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0 3 − V VCE sat collector-emitter saturation voltage IC = 4 mA; IB = 0.4 mA − 0.5 V V(BR)CBO collector-base breakdown voltage V(BR)CEO V(BR)EBO − UNIT V VBE on base-emitter ON voltage VCE = 10 V; IC = 4 mA − 0.95 V ICBO collector-base cut-off current VCB = 25 V; IE = 0 − 100 nA IEBO emitter-base cut-off current VCB = 25 V; IC = 0 − 100 nA hFE DC current gain VCE = 10 V; IC = 4 mA 60 − Cre collector-emitter feedback capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − 0.7 pF Crb collector-base feedback capacitance VCB = 10 V; IC = ic = 0; f = 1 MHz 0.35 0.65 pF fT transition frequency VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C 650 − MHz rbCc collector-base time constant VCB = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C − 9 ps September 1995 3 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MRA168 100 Y11 PMBTH10 MRA170 −10 b11 handbook, halfpage handbook, halfpage (mS) (mS) −20 80 g11 1000 MHz −30 60 −b11 40 −40 20 −50 700 400 0 102 f (MHz) −60 103 VCB = 10 V; IC = 4 mA. Fig.2 20 0 40 200 100 60 80 100 g11 (mS) VCB = 10 V; IC = 4 mA. Common base input admittance (Y11) as a function of frequency. Fig.3 Common base input admittance (Y11). MRA169 70 Y21 (mS) MRA171 60 b21 handbook, halfpage handbook, halfpage 200 400 (mS) b21 50 600 100 50 700 30 40 −g21 10 30 −10 20 −30 102 f (MHz) 1000 MHz 10 −70 103 −50 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.4 Fig.5 Common base forward transfer admittance (Y21) as a function of frequency. September 1995 4 −30 −10 10 30 g21 (mS) Common base forward transfer admittance (Y21). Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MRA164 5 MRA166 0 handbook, halfpage handbook, halfpage b12 (mS) Y12 (mS) 4 −1 3 −2 2 PMBTH10 100 200 400 700 −3 −b12 1000 MHz −4 1 0 102 g12 f (MHz) −5 −2 103 −1.2 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.6 Fig.7 Common base reverse transfer admittance (Y12) as a function of frequency. MRA165 10 1.2 2 g12 (mS) MRA167 10 1000 MHz b22 (mS) Y22 (mS) 0.4 Common base reverse transfer admittance (Y12). handbook, halfpage handbook, halfpage −0.4 8 8 700 MHz 6 6 b22 4 4 2 2 400 MHz 200 MHz g22 0 102 f (MHz) 100 MHz 0 103 0 VCB = 10 V; IC = 4 mA. Fig.8 4 6 8 10 g22 (mS) VCB = 10 V; IC = 4 mA. Common base reverse admittance (Y22) as a function of frequency. September 1995 2 Fig.9 Common base reverse admittance (Y22). 5 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 September 1995 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 7