DISCRETE SEMICONDUCTORS DATA SHEET BLW81 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. BLW81 The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION VCE V f MHz PL W c.w. 12,5 470 10 c.w. 12,5 175 10 PIN CONFIGURATION η % Gp dB > 6,0 typ. 13,5 zi Ω YL mS 60 1,3 + j2,5 150 − j66 typ. 60 1,2 − j0,6 140 − j80 > PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification UHF power transistor BLW81 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM max 36 V Collector-emitter voltage (open base) VCEO max 17 V Emitter-base voltage (open collector) VEBO max 4 V Collector current (d.c. or average) IC max 2,5 A Collector current (peak value); f > 1 MHz ICM max 7,5 A R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Ptot max 40 W Storage temperature Tstg Operating junction temperature Tj −65 to +150 °C 200 °C max MGP573 MGP574 10 50 handbook, halfpage handbook, halfpage r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz Prf (W) IC (A) 40 short time operation during mismatch derate by 0.204 W/K 30 continuous operation Tmb = 25 °C 20 Th = 70 °C 10 1 1 10 VCE (V) 0 102 0 50 Fig.2 Th (°C) 100 Fig.3 THERMAL RESISTANCE From junction to mounting base Rth j-mb = 4,3 K/W From mounting base to heatsink Rth mb-h = 0,6 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor BLW81 CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage V(BR)CES > 36 V V(BR)CEO > 17 V V(BR)EBO > 4 V ICES < 10 mA > 10 typ 35 VCEsat typ 0,75 V IC = 1,25 A; VCE = 12,5 V fT typ 1,3 GHz IC = 3,75 A; VCE = 12,5 V fT typ 0,9 GHz Cc typ 34 pF IC = 100 mA; VCE = 12,5 V Cre typ 18 pF Collector-stud capacitance Ccs typ 1,2 pF VBE = 0; IC = 25 mA Collector-emitter voltage open base; IC = 100 mA Emitter-base voltage open collector; IE = 10 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 1,25 A; VCE = 5 V hFE Collector-emitter saturation voltage (1) IC = 3,75 A; IB = 0,75 A Transition frequency at f = 500 MHz (1) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. March 1993 4 Philips Semiconductors Product specification UHF power transistor BLW81 MGP575 40 handbook, halfpage hFE handbook, halfpage IE = Ie = 0 Cc (pF) f = 1 MHz Tj = 25 °C Tj = 25 °C typ MGP576 60 VCE = 5 V 30 40 typ 20 20 10 0 0 0 2.5 5 IC (A) 7.5 0 10 Fig.4 20 VCB (V) Fig.5 MGP577 2 handbook, full pagewidth VCE = 12.5 V f = 500 MHz Tj = 25 °C fT (GHz) 1.5 typ 1 0.5 0 0 2.5 5 Fig.6 March 1993 5 IC (A) 7.5 Philips Semiconductors Product specification UHF power transistor BLW81 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C f (MHz) VCE (V) PL (W) 470 12,5 10 470 13,5 10 175 12,5 10 handbook, full pagewidth GP (dB) IC (A) η (%) > 6,0 < 1,33 > typ 1,9 typ 7,2 − typ 75 − − typ 0,45 typ 13,5 − typ 60 1,2 − j0,6 140 − j80 PS (W) < 2,5 60 zi (Ω) YL (mS) 1,3 + j2,5 150 − j66 C1 C2 L1 50 Ω C10 L5 C5 T.U.T. 50 Ω L3 C3 C4 L2 C9 C6 C7 C8 R1 R2 L4 +VCC MGP578 Fig.7 Class-B test circuit at f = 470 MHz. List of components: C1 = 2,2 pF (± 0, 25 pF) ceramic capacitor C2 = C9 = C10 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) C3 = 3,9 pF (± 0,25 pF) ceramic capacitor C4 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C5 = C6 = 15 pF ceramic chip capacitor (cat. no. 2222 851 13159) C7 = 100 pF ceramic feed-through capacitor C8 = 100 nF polyester capacitor L1 = stripline (27,9 mm × 6,0 mm) L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. = 4 mm; leads 2 × 5 mm L3 = 17 nH; 11⁄2 turns enamelled Cu wire (1 mm); spacing 1 mm; int. dia. = 6 mm; leads 2 × 5 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = stripline (45,8 mm × 6,0 mm) L1 and L5 are striplines on a double Cu-clad printed circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". R1 = 1 Ω (± 5%) carbon resistor R2 = 10 Ω (± 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8). March 1993 6 Philips Semiconductors Product specification UHF power transistor BLW81 124 handbook, full pagewidth 56 R1 C3 rivet C1 L2 C2 L1 C5 C10 L5 C6 C4 L3 C9 C7 R2 L4 C8 +VCC MGP579 The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLW81 MGP581 MGP580 30 handbook, halfpage PL (W) 10 handbook, halfpage VCC = 12.5 V VCC = 13.5 V f = 470 MHz typical values Gp (dB) VCC = 12.5 V VCC = 13.5 V f = 470 MHz Th = 25 °C 100 η (%) typical values η 20 Th = 25 °C 50 5 70 °C 10 Gp 0 0 0 2.5 5 PS (W) 0 Fig.9 10 20 PL (W) 0 30 Fig.10 Measuring conditions for R.F. SOAR f = 470 MHz Th = 70 °C Rth mb-h = 0,6 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. MGP582 15 handbook, halfpage PLnom (W) VSWR = 1 The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. VSWR = 2.25 13 5 11 10 50 PS PSnom The graph applies to the situation in which the drive (PS/PSnom ) increases linearly with supply over-voltage ratio. 9 1 1.1 1.2 VCC VCCnom 1.3 Fig.11 March 1993 8 Philips Semiconductors Product specification UHF power transistor BLW81 OPERATING NOTE Below 200 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. MGP583 20 handbook, halfpage Gp power gain versus frequency (class-B operation) (dB) 15 10 5 100 300 f (MHz) 500 Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 °C typical values Fig.12 MGP584 MGP585 4 8 handbook, halfpage load impedance (parallel components) handbook, halfpage input impedance (series components) ri, xi versus frequency (class-B operation) RL (Ω) (Ω) versus frequency (class-B operation) CL xi 2 ri CL (pF) −50 7.5 ri 0 RL 0 −100 7 CL RL xi −2 100 300 f (MHz) 6.5 100 500 Measuring conditions: Measuring conditions: VCC = 12,5 V PL = 10 W Th = 25 °C typical values VCC = 12,5 V PL = 10 W Th = 25 °C typical values Fig.13 March 1993 300 Fig.14 9 f (MHz) −150 500 Philips Semiconductors Product specification UHF power transistor BLW81 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A March 1993 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification UHF power transistor BLW81 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11