PHILIPS BLV11

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV11
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, h.f. and
v.h.f. transmitters with a nominal
supply voltage of 13,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
BLV11
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
MHz
PL
W
c.w.
13,5
175
15
>
c.w.
12,5
175
15
typ. 7,5
PIN CONFIGURATION
η
%
Gp
dB
8,0
zi
Ω
YL
mS
>
60
2,3 + j2,2
130 − j4,4
typ.
67
−
−
PINNING
PIN
handbook, halfpage
1
2
4
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
3
MSB057
Fig.1 Simplified outline, SOT123.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV11
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
vCESM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
18 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
3 A
Collector current (peak value); f > 1 MHz
ICM
max.
8 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
36 W
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
MGP261
3.5
MGP262
60
handbook, halfpage
handbook, halfpage
IC
(A)
Prf
(W)
2.5
Th = 70 °C
200 °C
ΙΙΙ
40
Tmb = 25 °C
ΙΙ
derate by 0.2 W/K
0.16 W/K
1.5
20
0.5
Ι
0
0
10
VCE (V)
20
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 15 W; Tmb = 74,5 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j−mb(dc)
=
6,55 K/W
From junction to mounting base (r.f. dissipation)
Rth j−mb(rf)
=
4,95 K/W
From mounting base to heatsink
Rth mb−h
=
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLV11
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR)CES
>
36 V
V(BR)CEO
>
18 V
V(BR)EBO
>
4 V
ICES
<
4 mA
open base
ESBO
>
2,5 mJ
RBE = 10 Ω
ESBR
>
2,5 mJ
typ.
40
VBE = 0; IC = 10 mA
Collector-emitter breakdown voltage
open base; IC = 50 mA
Emitter-base breakdown voltage
open collector; IE = 4 mA
Collector cut-off current
VBE = 0; VCE = 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain
(1)
IC = 1,5 A; VCE = 5 V
hFE
10 to
100
Collector-emitter saturation voltage (1)
IC = 4,5 A; IB = 0,9 A
VCEsat
typ.
1,0 V
−IE = 1,5 A; VCB = 13,5 V
fT
typ.
850 MHz
−IE = 4,5 A; VCB = 13,5 V
fT
typ.
800 MHz
Cc
typ.
32 pF
IC = 200 mA; VCE = 13,5 V
Cre
typ.
23 pF
Collector-flange capacitance
Ccf
typ.
2 pF
Transition frequency at f = 100 MHz
(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 13,5 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV11
MGP263
60
MGP264
100
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
VCE = 13.5 V
50
75
5V
40
50
typ
30
25
20
0
2.5
0
5
IC (A)
0
Fig.4 Typical values; Tj = 25 °C.
10
VCB (V)
20
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
MGP265
1000
handbook, full pagewidth
fT
(MHz)
VCB = 13.5 V
800
10 V
600
400
200
0
0
4
2
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
5
−IE (A)
6
Philips Semiconductors
Product specification
VHF power transistor
BLV11
APPLICATION INFORMATION
R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
Th = 25 °C
f (MHz)
VCE (V)
PL (W)
PS (W)
175
13,5
15
< 2,4
175
12,5
15
−
Gp (dB)
>
< 1,85 >
8,0
−
typ. 7,5
handbook, full pagewidth
η (%)
IC (A)
typ.
L4
C1
50 Ω
YL (mS)
60
2,3 + j2,2
130 − j4,4
67
−
−
L7
C6
50 Ω
T.U.T.
L3
L1
zi (Ω)
C7
L5
C2
L2
C3
C4
C5
R1
L6
+VCC
MGP253
Fig.7 Test circuit; c.w. class-B.
List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3 = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2 × 5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm × 6 mm); tap for C3 at 5 mm from transistor
L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2 × 5 mm
L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2 × 5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV11
150
handbook, full pagewidth
72
L6
+VCC
C4
C5
L5
L3
C1
C2
L4
L1
C6
L7
L2
R1
C7
C3
rivet
MGP254
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLV11
MGP266
25
MGP267
10
handbook, halfpage
handbook, halfpage
G
PL
(W)
p
Gp
(dB)
Th = 25 °C
20
Th = 25 °C
7.5
70 °C
70 °C
15
5
100
Th = 25 °C
η
(%)
η
10
2.5
5
50
70 °C
0
0
0
2.5
5
7.5
PS (W)
5
 VCE = 13,5 V;
− − − VCE = 12,5 V.
10
15
PL (W)
 VCE = 13,5 V;
− − − VCE = 12,5 V.
Fig.9 Typical values; f = 175 MHz;
Fig.10 Typical values; f = 175 MHz.
MGP268
17
PLnom halfpage
handbook,
(W)
(VSWR = 1)
16
The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under
nominal conditions (VSWR = 1), as a function of
the expected supply over-voltage ratio with VSWR
as parameter.
The graph applies to the situation in which the
drive (PS/PSnom) increases linearly with supply
over-voltage ratio.
VSWR =
4.5
5
15
14
10
13
20
50
12
1
1.1
1.2
PS
PSnom
VCE
1.3
VCEnom
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1.
August 1986
8
20
Philips Semiconductors
Product specification
VHF power transistor
BLV11
MGP269
5
MGP270
20
handbook, halfpage
handbook, halfpage
ri, xi
RL
(Ω)
xi
ri
−50
15
0
0
CL
(pF)
(Ω)
ri
2.5
CL
RL
10
−100
RL
xi
−2.5
−150
5
CL
−5
0
0
100
200
f (MHz)
300
0
Typical values: VCE = 13,5 V;
PL = 15 W;
Th = 25 °C
100
200
f (MHz)
−200
300
Typical values: VCE = 13,5 V;
PL = 15 W;
Th = 25 °C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (parallel components).
OPERATING NOTE
Below 50 MHz a base-emitter resistor of 10 Ω is
recommended to avoid oscillation. This resistor must be
effective for r.f. only.
MGP271
20
handbook, halfpage
Gp
(dB)
15
10
5
0
0
100
200
f (MHz)
300
Typical values: VCE = 13,5 V;
PL = 15 W;
Th = 25 °C
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
BLV11
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
VHF power transistor
BLV11
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11