QTP 150408:Automotive 4-MBIT ASYNCHRONOUS SRAM FAMILY ULL65 (LL65UP-25ODR) TECHNOLOGY, UMC FAB12A.pdf

Document No. 002-03894 Rev. *A
ECN #: 5218255
Cypress Semiconductor Automotive
Product Qualification Report
QTP# 150408 VERSION *A
April 2016
Automotive 4-MBIT and 2-MBIT Asynchronous SRAM Family
ULL65 (LL65UP-25ODR) Technology, UMC Fab12A
CY62146G*
CY62147G*
CY621472G*
MOBL® AUTOMOTIVE, 4-MBIT (256K WORDS X 16 BIT) STATIC RAM
WITH ERROR-CORRECTING CODE (ECC)
CY7C1041G*
FAST AUTOMOTIVE, 4-MBIT (256K WORDS X 16 BIT) STATIC RAM
WITH ERROR-CORRECTING CODE (ECC)
CY7C1011G*
FAST AUTOMOTIVE, 2-MBIT (128K WORDS X 16 BIT) STATIC RAM
WITH ERROR-CORRECTING CODE (ECC)
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Don Darling
Reliability Director
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
PRODUCT QUALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
Comp
150408
Qualification of 4-MBIT and 2-MBIT Asynchronous SRAM Family, ULL65 (LL65UP-250DR)
Technology at UMC Fab12A
Sept 15
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 2 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
PRODUCT DESCRIPTION (for qualification)
Qualification of 4-MBIT Asynchronous SRAM Family, ULL65 (LL65UP-250DR) Technology at UMC Fab12A
CY62146G*, CY62146G30*, CY62147G30*, CY621472G30*
Marketing Part #:
CY7C1041G30*, CY7C1011G30*
Device Description:
Automotive, 4MB (256K X 16 ) / 2MB (128KX16) Static Ram With Error
Correcting Code (ECC)
Cypress Division:
Cypress Semiconductor Corporation – Memory Products Division (MPD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5 Metal + 1 RDL
Passivation Type and Materials:
Generic Process Technology/Design Rule (drawn):
Gate Oxide Material/Thickness (MOS):
Name/Location of Die Fab (prime) Facility:
Die Fab Line ID/Wafer Process ID:
Metal
Metal 1: Cu 0.18um
Composition: Metal 2: Cu 0.22um
Metal 3: Cu 0.22um
Metal 4: Cu 0.36um
Metal 5: Cu 1.25um
0.4um oxide/0.5um nitride
CMOS 65nm
SiON / 19.5 A
UMC / Taiwan
Fab12 L65LL
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
QTP NUMBER
48-Lead VFBGA (6x8x1.2mm)
ASEK-Taiwan (G)
150417
48-Lead VFBGA (6x8x1.0mm)
ASEK-Taiwan (G)
150818
44-Lead TSOP II (400mil)
JCET-China (JT)
150416
Company Confidential
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Page 3 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
ZW44A
Package Outline, Type, or Name:
44L TSOPII (400mils)
Mold Compound Name/Manufacturer:
KE-G6000DA / Kyocera
Mold Compound Flammability Rating:
V0 UL94
Mold Compound Alpha Emission Rate:
<0.001 CPH/cm2
Oxygen Rating Index: >28%
28%
Lead Frame Designation:
FMP with thru slots
Lead Frame Material:
Cu
Substrate Material:
N/A
Lead Finish, Composition / Thickness:
Roughened NiPdAu PPF
Die Backside Preparation Method/Metallization:
Backgrind to 7mils
Die Separation Method:
Laser Groove + Mech’l Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
QMI-509
Bond Diagram Designation
001-95778
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.8 mil
Thermal Resistance Theta JA C/W:
66.82 C/W
Package Cross Section Yes/No:
Yes
Assembly Process Flow:
002-03840
Name/Location of Assembly (prime) facility:
JCET – China (JT)
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Chipmos Taiwan (GO)
Note: Please contact a Cypress Representative for other packages availability.
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 4 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
BK48M
Package Outline, Type, or Name:
48L VFBGA (6x8x1.2mm)
Mold Compound Name/Manufacturer:
KE-G2250 / Kyocera
Mold Compound Flammability Rating:
V0 UL94
Mold Compound Alpha Emission Rate:
0.001 CPH/cm2
Oxygen Rating Index: >28%
28%
Lead Frame Designation:
N/A
Lead Frame Material:
N/A
Substrate Material:
BT
Lead Finish, Composition / Thickness:
SAC105 (SnAgCu)
Die Backside Preparation Method/Metallization:
Backgrind to 7mils
Die Separation Method:
Laser Groove + Mech’l Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
Ablebond 2100A
Bond Diagram Designation
001-95781
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.8mil
Thermal Resistance Theta JA C/W:
30.68 C/W
Package Cross Section Yes/No:
Y
Assembly Process Flow:
002-03863
Name/Location of Assembly (prime) facility:
ASEK-Taiwan (G)
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Chipmos Taiwan (GO)
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 5 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
BZ48A
Package Outline, Type, or Name:
48L VFBGA (6x8x1.0mm)
Mold Compound Name/Manufacturer:
KE-G2250 / Kyocera
Mold Compound Flammability Rating:
V0 UL94
Mold Compound Alpha Emission Rate:
0.001 CPH/cm2
Oxygen Rating Index: >28%
28%
Lead Frame Designation:
N/A
Lead Frame Material:
N/A
Substrate Material:
BT
Lead Finish, Composition / Thickness:
SAC105 (SnAgCu)
Die Backside Preparation Method/Metallization:
Backgrind to 7mils
Die Separation Method:
Laser Groove + Mech’l Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
Ablebond 2100A
Bond Diagram Designation
001-95780
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.8mil
Thermal Resistance Theta JA C/W:
30.68 C/W
Package Cross Section Yes/No:
Y
Assembly Process Flow:
002-03864
Name/Location of Assembly (prime) facility:
ASEK-Taiwan (G)
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Chipmos Taiwan (GO)
Company Confidential
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Page 6 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Early Failure Rate
AEC-Q100-008 and JESD22-A108, 125°C
Dynamic Operating Condition, Vcc Max = 1.44V
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
AEC-Q100-002
500V/1000V/2000V
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrical Distribution
AEC-Q100-011
250V/500V//750V
AEC-Q100-009
Static Latch-up
AEC-Q100-004, 85C, 140mA
Company Confidential
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Page 7 of 11
P
P
P
Document No. 002-03894 Rev. *A
ECN #: 5218255
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life Early
Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure
Rate
10,489 Devices
0
N/A
N/A
0 PPM
1
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate..
3 Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at
use conditions.
Company Confidential
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Page 8 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
Assy Loc
150408
Duration
Samp
Rej
Failure Mechanism
STRESS: ELECTRICAL TEST DISTRIBUTION
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
COMP
30
0
CY7C1041G30 (7ª171041AO)
9507003
611519245
JCET-JT
COMP
30
0
CY62147G30 (7ª172147AO)
9508002
611520074
JCET-JT
COMP
30
0
STRESS: ESD-CHARGE DEVICE MODEL
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
250
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
250
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
250
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
250
3
0
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
500
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
500
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
500
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
500
3
0
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
750
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
750
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
750
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
750
3
0
STRESS: ESD-HUMAN BODY MODEL
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
500
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
500
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
500
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
500
3
0
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
1000
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
1000
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
1000
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
1000
3
0
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
2000
3
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
2000
3
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
2000
3
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
2000
3
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 9 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
Assy Loc
150408
Duration
Samp
Rej
Failure Mechanism
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 1.44V, Vcc Max
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
COMP
3495
0
CY7C1041G30 (7ª171041AO)
9507003
611519245
JCET-JT
COMP
3497
0
CY62147G30 (7ª172147AO)
9508002
611520074
JCET-JT
COMP
3497
0
STRESS: STATIC LATCH-UP (+/-140mA 125C)
CY7C1041G30 (7ª171041AO)
9507001
611517301
JCET-JT
COMP
6
0
CY621472G30 (7ª1721472AO)
9507003
611519244
JCET-JT
COMP
6
0
CY62147G30 (7ª172147AO)
9507001
611516597
ASE-G
COMP
6
0
CY7C1011G30 (7ª1710311AO)
9507003
611518455
ASE-G
COMP
6
0
Company Confidential
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Page 10 of 11
Document No. 002-03894 Rev. *A
ECN #: 5218255
Document History Page
Document Title:
QTP#150408: AUTOMOTIVE 4-MBIT ASYNCHRONOUS SRAM FAMILY ULL65 (LL65UP25ODR) TECHNOLOGY, UMC FAB12A
Document Number:
002-03894
Rev. ECN
No.
Orig. of
Change
Description of Change
**
*A
HSTO
HSTO
Initial spec release
Update title
4949693
5218255
Company Confidential
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Page 11 of 11
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