Document No. 002-03894 Rev. *A ECN #: 5218255 Cypress Semiconductor Automotive Product Qualification Report QTP# 150408 VERSION *A April 2016 Automotive 4-MBIT and 2-MBIT Asynchronous SRAM Family ULL65 (LL65UP-25ODR) Technology, UMC Fab12A CY62146G* CY62147G* CY621472G* MOBL® AUTOMOTIVE, 4-MBIT (256K WORDS X 16 BIT) STATIC RAM WITH ERROR-CORRECTING CODE (ECC) CY7C1041G* FAST AUTOMOTIVE, 4-MBIT (256K WORDS X 16 BIT) STATIC RAM WITH ERROR-CORRECTING CODE (ECC) CY7C1011G* FAST AUTOMOTIVE, 2-MBIT (128K WORDS X 16 BIT) STATIC RAM WITH ERROR-CORRECTING CODE (ECC) FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 150408 Qualification of 4-MBIT and 2-MBIT Asynchronous SRAM Family, ULL65 (LL65UP-250DR) Technology at UMC Fab12A Sept 15 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 PRODUCT DESCRIPTION (for qualification) Qualification of 4-MBIT Asynchronous SRAM Family, ULL65 (LL65UP-250DR) Technology at UMC Fab12A CY62146G*, CY62146G30*, CY62147G30*, CY621472G30* Marketing Part #: CY7C1041G30*, CY7C1011G30* Device Description: Automotive, 4MB (256K X 16 ) / 2MB (128KX16) Static Ram With Error Correcting Code (ECC) Cypress Division: Cypress Semiconductor Corporation – Memory Products Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 5 Metal + 1 RDL Passivation Type and Materials: Generic Process Technology/Design Rule (drawn): Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Die Fab Line ID/Wafer Process ID: Metal Metal 1: Cu 0.18um Composition: Metal 2: Cu 0.22um Metal 3: Cu 0.22um Metal 4: Cu 0.36um Metal 5: Cu 1.25um 0.4um oxide/0.5um nitride CMOS 65nm SiON / 19.5 A UMC / Taiwan Fab12 L65LL PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE QTP NUMBER 48-Lead VFBGA (6x8x1.2mm) ASEK-Taiwan (G) 150417 48-Lead VFBGA (6x8x1.0mm) ASEK-Taiwan (G) 150818 44-Lead TSOP II (400mil) JCET-China (JT) 150416 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: ZW44A Package Outline, Type, or Name: 44L TSOPII (400mils) Mold Compound Name/Manufacturer: KE-G6000DA / Kyocera Mold Compound Flammability Rating: V0 UL94 Mold Compound Alpha Emission Rate: <0.001 CPH/cm2 Oxygen Rating Index: >28% 28% Lead Frame Designation: FMP with thru slots Lead Frame Material: Cu Substrate Material: N/A Lead Finish, Composition / Thickness: Roughened NiPdAu PPF Die Backside Preparation Method/Metallization: Backgrind to 7mils Die Separation Method: Laser Groove + Mech’l Saw Die Attach Supplier: Ablestik Die Attach Material: QMI-509 Bond Diagram Designation 001-95778 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8 mil Thermal Resistance Theta JA C/W: 66.82 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 002-03840 Name/Location of Assembly (prime) facility: JCET – China (JT) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos Taiwan (GO) Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: BK48M Package Outline, Type, or Name: 48L VFBGA (6x8x1.2mm) Mold Compound Name/Manufacturer: KE-G2250 / Kyocera Mold Compound Flammability Rating: V0 UL94 Mold Compound Alpha Emission Rate: 0.001 CPH/cm2 Oxygen Rating Index: >28% 28% Lead Frame Designation: N/A Lead Frame Material: N/A Substrate Material: BT Lead Finish, Composition / Thickness: SAC105 (SnAgCu) Die Backside Preparation Method/Metallization: Backgrind to 7mils Die Separation Method: Laser Groove + Mech’l Saw Die Attach Supplier: Ablestik Die Attach Material: Ablebond 2100A Bond Diagram Designation 001-95781 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8mil Thermal Resistance Theta JA C/W: 30.68 C/W Package Cross Section Yes/No: Y Assembly Process Flow: 002-03863 Name/Location of Assembly (prime) facility: ASEK-Taiwan (G) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos Taiwan (GO) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: BZ48A Package Outline, Type, or Name: 48L VFBGA (6x8x1.0mm) Mold Compound Name/Manufacturer: KE-G2250 / Kyocera Mold Compound Flammability Rating: V0 UL94 Mold Compound Alpha Emission Rate: 0.001 CPH/cm2 Oxygen Rating Index: >28% 28% Lead Frame Designation: N/A Lead Frame Material: N/A Substrate Material: BT Lead Finish, Composition / Thickness: SAC105 (SnAgCu) Die Backside Preparation Method/Metallization: Backgrind to 7mils Die Separation Method: Laser Groove + Mech’l Saw Die Attach Supplier: Ablestik Die Attach Material: Ablebond 2100A Bond Diagram Designation 001-95780 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8mil Thermal Resistance Theta JA C/W: 30.68 C/W Package Cross Section Yes/No: Y Assembly Process Flow: 002-03864 Name/Location of Assembly (prime) facility: ASEK-Taiwan (G) MSL LEVEL 3 REFLOW PROFILE 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Chipmos Taiwan (GO) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate AEC-Q100-008 and JESD22-A108, 125°C Dynamic Operating Condition, Vcc Max = 1.44V P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) Electrical Distribution AEC-Q100-011 250V/500V//750V AEC-Q100-009 Static Latch-up AEC-Q100-004, 85C, 140mA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 P P P Document No. 002-03894 Rev. *A ECN #: 5218255 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 10,489 Devices 0 N/A N/A 0 PPM 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 150408 Duration Samp Rej Failure Mechanism STRESS: ELECTRICAL TEST DISTRIBUTION CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT COMP 30 0 CY7C1041G30 (7ª171041AO) 9507003 611519245 JCET-JT COMP 30 0 CY62147G30 (7ª172147AO) 9508002 611520074 JCET-JT COMP 30 0 STRESS: ESD-CHARGE DEVICE MODEL CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 250 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 250 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 250 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 250 3 0 CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 500 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 500 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 500 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 500 3 0 CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 750 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 750 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 750 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 750 3 0 STRESS: ESD-HUMAN BODY MODEL CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 500 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 500 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 500 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 500 3 0 CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 1000 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 1000 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 1000 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 1000 3 0 CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT 2000 3 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT 2000 3 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G 2000 3 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G 2000 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 150408 Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 1.44V, Vcc Max CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT COMP 3495 0 CY7C1041G30 (7ª171041AO) 9507003 611519245 JCET-JT COMP 3497 0 CY62147G30 (7ª172147AO) 9508002 611520074 JCET-JT COMP 3497 0 STRESS: STATIC LATCH-UP (+/-140mA 125C) CY7C1041G30 (7ª171041AO) 9507001 611517301 JCET-JT COMP 6 0 CY621472G30 (7ª1721472AO) 9507003 611519244 JCET-JT COMP 6 0 CY62147G30 (7ª172147AO) 9507001 611516597 ASE-G COMP 6 0 CY7C1011G30 (7ª1710311AO) 9507003 611518455 ASE-G COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 002-03894 Rev. *A ECN #: 5218255 Document History Page Document Title: QTP#150408: AUTOMOTIVE 4-MBIT ASYNCHRONOUS SRAM FAMILY ULL65 (LL65UP25ODR) TECHNOLOGY, UMC FAB12A Document Number: 002-03894 Rev. ECN No. Orig. of Change Description of Change ** *A HSTO HSTO Initial spec release Update title 4949693 5218255 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11