POINN BUV48

BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK
●
Rugged Triple-Diffused Planar Construction
●
15 A Continuous Collector Current
●
1000 Volt Blocking Capability
AUGUST 1978 - REVISED MARCH 1997
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V BE = 0 V)
Collector-emitter voltage (RBE = 10 Ω)
Collector-emitter voltage (IB = 0)
SYMBOL
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
VCES
VCER
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
IC
15
ICM
30
A
A
IB
4
A
A
IBM
20
Non repetitive accidental peak surge current
ICSM
55
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
125
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Peak base current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V CEO(sus)
ICES
ICER
IEBO
VEBO
VCE(sat)
V BE(sat)
ft
Cob
TEST CONDITIONS
Collector-emitter
sustaining voltage
IC = 200 mA
L = 25 mH
MIN
(see Note 2)
BUV48
400
BUV48A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
BUV48
0.2
Collector-emitter
V CE = 1000 V
VBE = 0
BUV48A
0.2
cut-off current
V CE = 850 V
VBE = 0
TC = 125°C
BUV48
2.0
V CE = 1000 V
VBE = 0
TC = 125°C
BUV48A
2.0
VCE = 850 V
RBE = 10 Ω
BUV48
0.5
Collector-emitter
V CE = 1000 V
RBE = 10 Ω
BUV48A
0.5
cut-off current
V CE = 850 V
RBE = 10 Ω
TC = 125°C
BUV48
4.0
V CE = 1000 V
RBE = 10 Ω
TC = 125°C
BUV48A
4.0
VEB =
5V
IC = 0
IE =
50 mA
IC = 0
Emitter cut-off
current
Emitter-base
breakdown voltage
7
mA
mA
1
mA
30
V
IB =
2A
IC =
10 A
BUV48
1.5
Collector-emitter
IB =
3A
IC =
15 A
BUV48
5.0
saturation voltage
IB =
1.6 A
IC =
8A
BUV48A
1.5
(see Notes 3 and 4)
UNIT
V
IB =
2.4 A
IC =
12 A
BUV48A
5.0
Base-emitter
IB =
2A
IC =
10 A
BUV48
1.6
saturation voltage
IB =
1.6 A
IC =
8A
BUV48A
1.6
VCE =
10 V
IC = 0.5 A
f = 1 MHz
10
MHz
VCB =
20 V
IC = 0
f = 1 MHz
150
pF
Current gain
bandwidth product
Output capacitance
(see Notes 3 and 4)
V
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1
°C/W
MAX
UNIT
1.0
µs
3.0
µs
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn on time
ts
Storage time
tf
Fall time
ton
Turn on time
ts
Storage time
tf
Fall time
TEST CONDITIONS
†
MIN
IC = 10 A
VCC = 150 V
BUV48
IB(on) = 2 A
IB(off) = -2 A
(see Figures 1 and 2)
IC = 8 A
VCC = 150 V
BUV48A
IB(on) = 1.6 A
IB(off) = -1.6 A
(see Figures 1 and 2)
TYP
0.8
µs
1.0
µs
3.0
µs
0.8
µs
MAX
UNIT
4.0
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 100°C case temperature
PARAMETER
†
tsv
Voltage storage time
IC = 10 A
IB(on) = 2 A
tfi
Current fall time
V BE(off) = -5 V
(see Figures 3 and 4)
tsv
Voltage storage time
IC = 8 A
IB(on) = 1.6 A
tfi
Current fall time
V BE(off) = -5 V
(see Figures 3 and 4)
PRODUCT
2
TEST CONDITIONS
INFORMATION
MIN
BUV48
BUV48A
TYP
0.4
µs
4.0
µs
0.4
µs
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µ F
120 Ω
T
V1
100 Ω
100 µ F
47 Ω
tp
V cc V=CC250 V
TUT
15 Ω
V1
100 Ω
680 µ F
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
C
90%
90%
E
IC
A - B = td
B - C = tr
B
E - F = tf
10%
10%
F
0%
D - E = ts
A - C = ton
D - F = toff
90%
D
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
PRODUCT
INFORMATION
3
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
V Gen
180 µ H
2N2222
1 kΩ
68 Ω
0.02 µ F
vcc
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
Base Current
B - C = trv
D - E = tfi
E - F = tti
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
PRODUCT
4
INFORMATION
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP765AA
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
1·0
0·1
1·0
10
TCP765AB
5·0
IC = 5 A
IC = 10 A
IC = 15 A
4·0
TC = 25°C
3·0
2·0
1·0
0
0·1
20
1·0
IC - Collector Current - A
IB - Base Current - A
Figure 5.
Figure 6.
4·0
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AI
IC = 5 A
IC = 10 A
IC = 15 A
TC = 100°C
3·0
2·0
1·0
0
0·1
1·5
IC = 15 A
1·4
1·3
IC = 10 A
1·2
1·1
1·0
IC = 5 A
0·9
0·8
1·0
IB - Base Current - A
Figure 7.
PRODUCT
TCP765AC
1·6
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
10
10
0
1
2
3
4
5
6
IB - Base Current - A
Figure 8.
INFORMATION
5
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP765AD
ICES - Collector Cut-off Current - µA
4·0
1·0
BUV48A
VCE = 1000 V
0·1
BUV48
VCE = 850 V
0·01
-80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 9.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
10
1·0
0.1
0·01
1·0
tp =
10 µ s
tp =
50 µ s
tp = 100 µ s
tp = 500 µ s
tp =
1 ms
tp =
2 ms
DC Operation
BUV48
BUV48A
10
100
VCE - Collector-Emitter Voltage - V
Figure 10.
PRODUCT
6
SAP765AA
INFORMATION
1000
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
3,95
4,15
1,37
1,17
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
2
3
1,30
0,78
0,50
1,10
11,1
10,8
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
MDXXAW
INFORMATION
7
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT
8
INFORMATION