GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max) • Built-in zener diode between gate and emitter • SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation(t=10 s) DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Junction temperature Storage temperature range Symbol Rating Unit VCES VGES VGES 400 ±6 ±8 V ICP 200 A PC (1) PC (2) Tj Tstg 1.9 1.0 150 −55~150 W W °C °C V 1.2.3 Emitter 4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Gate 5.6.7.8 Collector JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1C Weight: 0.08 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Thermal Characteristics Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Marking Symbol Rating Unit Rth (j-a) (1) 65.8 °C/W Rth (j-a) (2) 125 °C/W (Note 3) 10G131 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page. 1 2006-11-02 GT10G131 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 6 V, VCE = 0 ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.6 0.9 1.2 V VCE (sat) IC = 200 A, VGE = 4 V ⎯ 2.3 ⎯ V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 2800 ⎯ pF ⎯ 2.8 ⎯ ⎯ 3.1 ⎯ ⎯ 1.8 ⎯ ⎯ 2.0 ⎯ Collector-emitter saturation voltage Input capacitance Cies Rise time tr 4V ton Turn-on time Switching time Fall time tf Turn-off time toff 0 51 Ω VIN: tr < = 100 ns tf < = 100 ns < 1% Duty cycle = 1.5Ω Gate-emitter cut-off voltage μs ≒300V Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a) Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) for GATE for COLLECTOR for EMITTER for COLLECTOR for EMITTER for GATE Note 3: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) ※ Pb-Free Finish (Only a coating lead terminal) : It is marking about an underline to a week of manufacture mark. 2 2006-11-02 GT10G131 Caution on handling This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design You should be design dV/dt value is below 400 V/μs when IGBT turn off. ●definition of dv/dt The slope of vce from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform (expansion) ●waveform IC IC(begin) VCE IC(end) VCE 90V 30V 0V, 0A dv/dt period 3 ⊿t 2006-11-02 GT10G131 IC – VCE IC – VCE 200 200 3.0 4.0 160 (A) (A) 2.5 160 VGE = 5.0 V IC 2.0 120 Collector current Collector current 4.0 IC 3.0 VGE = 5.0 V 2.5 80 40 2.0 120 80 40 Common emitter Common emitter Tc = 25°C Tc = −10°C 0 0 1 2 3 4 Coleector-emitter voltage 0 0 5 VCE (V) 1 2 3 Collector-emitter voltage IC – VCE 3.0 2.5 (A) 160 2.5 VGE = 5.0 V 120 Collector current IC IC VGE = 5.0 V 160 2.0 80 40 120 2.0 80 40 Common emitter Common emitter Tc = 70°C 0 0 1 2 3 Collector-emitter voltage 4 VCE Tc = 125°C 0 0 5 1 (V) IC – VCE 3 5 (V) IC – VGE (A) 160 25 Tc = −10°C 160 Tc = −10°C IC 70 Collector current 120 125 80 40 25 70 120 125 80 40 Common emitter Common emitter 0 0 4 VCE 200 IC (A) 2 Collector-emitter voltage 200 Collector current (V) 4.0 3.0 4.0 (A) VCE 5 IC – VCE 200 200 Collector current 4 VCE = 5 V VGE = 4 V 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 1 2 3 Gate-emitter voltage 4 4 VGE 5 (V) 2006-11-02 GT10G131 VCE (sat) – Tc VGE (OFF) – Tc 1.6 Common emitter Common emitter VCE = 5 V VGE = 4 V Gate-emitter cut-off voltage VGE (OFF) (V) IC = 200 A 3 170 150 2 120 90 60 1 50 Case temperature 100 Tc 0.4 0 −50 150 (°C) 0 50 Case temperature (V) VCE Collector-emitter voltage Capacitance C (pF) 1000 100 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Cres 10 VCE 500 6 Common emitter VCC = 300 V RL = 1.5 Ω Tc = 25°C 4 300 3 200 2 VCE 100 1 10 20 30 Gate charge (V) Switching time – RG 0 50 40 QG (nC) Switching time – IC 10 10 Common emitter VCE = 300 V VGE = 4 V IC = 200 A Tc = 25°C ton toff tf 3 10 Gate resistance 100 RG toff (μs) tr Swithching time (μs) 5 VGE 400 0 0 1000 100 Collector-emitter voltage Switching time (°C) 600 Cies 1 1 Tc 150 VCE, VGE – QG C – VCE 10000 10 1 100 (V) 0 0.8 VGE 0 −50 IC = 1 mA 1.2 Gate-emitter voltage Collector-emitter saturation voltage VCE (sat) (V) 4 tf 1 (Ω) Common emitter tr 0.1 0 1000 ton 50 VCC = 300 V VGE = 4 V RG = 51 Ω Tc = 25°C 100 Collector current 5 150 IC 200 (A) 2006-11-02 GT10G131 Maximum operating area Minimum gate drive area (μF) 800 Tc = 25°C 70 Main capacitance Peak collector current 160 120 80 40 0 0 2 4 Gate-emitter voltage 600 CM 200 ICP (A) 240 6 VGE 400 200 0 0 8 VCM = 350 V Tc < = 70°C VGE = 4.0 V < RG = < 300 Ω 10 Ω = 40 80 120 Peak collector current (V) 6 160 ICP 200 240 (A) 2006-11-02 GT10G131 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-02