INTEGRATED CIRCUITS DATA SHEET TDA1564 High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier Preliminary specification Supersedes data of 2003 Sep 17 2004 Jan 27 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 FEATURES GENERAL DESCRIPTION • Low dissipation due to switching from Single-Ended (SE) to Bridge-Tied Load (BTL) mode The TDA1564 is a monolithic power amplifier in a 17-lead single-in-line (SIL) plastic power package. It contains two identical 25 W amplifiers. The dissipation is minimized by switching from SE to BTL mode, only when a higher output voltage swing is needed. The device is primarily developed for car radio applications. • Differential inputs with high Common Mode Rejection Ratio (CMRR) • Mute/standby/operating (mode select pin) • Load dump protection circuit • Short-circuit safe to ground, to supply voltage and across load • Loudspeaker protection circuit • Offset detection for each channel • Device switches to single-ended operation at excessive junction temperatures • Thermal protection at high junction temperature (170°C) • Clip detection at THD = 2.5 % • Diagnostic information (clip/protection/prewarning/offset). QUICK REFERENCE DATA SYMBOL VP PARAMETER supply voltage CONDITIONS repetitive peak output current Iq(tot) total quiescent current TYP. MAX. UNIT DC biased 6.0 14.4 18 V non-operating − − 30 V load dump IORM MIN. RL = ∞ − − 45 V − − 4 A − 95 150 mA Istb standby current − 1 50 µA Zi input impedance 90 120 150 kΩ Po output power RL = 4 Ω; EIAJ − 38 − W RL = 4 Ω; THD = 10 % 23 25 − W RL = 4 Ω; THD = 2.5 % 18 20 − W Gv voltage gain Po = 1 W 25 26 27 dB CMRR common mode rejection ratio f = 1 kHz; Rs = 0 Ω − 80 − dB SVRR supply voltage ripple rejection f = 1 kHz; Rs = 0 Ω ∆VO DC output offset voltage αcs channel separation ∆Gv channel unbalance Rs = 0 Ω; Po = 15 W 45 65 − dB − − 100 mV 40 70 − dB − − 1 dB ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION TDA1564TH HSOP20 plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3 TDA1564J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 2004 Jan 27 2 VERSION Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 BLOCK DIAGRAM VP1 VP2 20 11 + TDA1564TH SLAVE CONTROL − MUTE IN2 − 13 − IV 14 OUT2 − 8 OUT2 + + VI IN2 + 7 − + − VI 60 kΩ CIN + 60 kΩ VP 25 kΩ 19 16 Vref − CSE + 60 kΩ IN1− IN1+ 60 kΩ + VI 18 − + + VI 17 − n.c. 1 − 10 SLAVE CONTROL STANDBY LOGIC 2 MODE 4 OUT1+ + CLIP/PROTECTION TEMP PREWARNING OFFSET DETECTION 15 12 DIAG OC1 Fig.1 Block diagram (TDA1564TH). 2004 Jan 27 OUT1− − MUTE n.c. 3 IV 3 9 5 6 OC2 GND1 GND2 mdb811 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier VP1 TDA1564 VP2 5 13 + TDA1564J SLAVE CONTROL − MUTE IN2 − 16 − IV 17 OUT2 − 11 OUT2 + + VI IN2 + 10 − + − VI 60 kΩ CIN + 60 kΩ VP 25 kΩ 3 4 Vref − CSE + 60 kΩ 60 kΩ + VI IN1− 2 + IN1+ 1 − − + VI − SLAVE CONTROL 6 MODE 8 OUT1+ + CLIP/PROTECTION TEMP PREWARNING OFFSET DETECTION 15 14 12 DIAG OC1 OC2 Fig.2 Block diagram (TDA1564J). 2004 Jan 27 OUT1− − MUTE STANDBY LOGIC 7 IV 4 9 GND mgw244 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 PINNING PIN SYMBOL n.c. DESCRIPTION TDA1564TH TDA1564J 1 − not connected MODE 2 6 mute/standby/operating OUT1− 3 7 inverting output 1 OUT1+ 4 8 non-inverting output 1 GND1 5 − ground 1 GND − 9 ground GND2 6 − ground 2 OUT2− 7 10 inverting output 2 OUT2+ 8 11 non-inverting output 2 OC2 9 12 offset capacitor 2 n.c. 10 − not connected VP2 11 13 supply voltage 2 OC1 12 14 offset capacitor 1 IN2− 13 16 inverting input 2 IN2+ 14 17 non-inverting input 2 DIAG 15 15 diagnostic CSE 16 4 electrolytic capacitor for single-ended (SE) mode IN1+ 17 1 non-inverting input 1 IN1− 18 2 inverting input 1 CIN 19 3 common input VP1 20 5 supply voltage 1 2004 Jan 27 5 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, halfpage IN1+ 1 IN1− 2 CIN 3 CSE 4 VP1 5 MODE 6 VP1 20 1 n.c. CIN 19 2 MODE IN1− 18 3 OUT1− OUT1− 7 IN1+ 17 4 OUT1+ OUT1+ 8 5 GND1 GND 9 CSE 16 DIAG 15 TDA1564TH 6 GND2 IN2+ 14 7 OUT2− IN2− 13 8 OUT2+ OC1 12 9 OC2 VP2 11 TDA1564J OUT2 − 10 OUT2 + 11 10 n.c. OC2 12 VP2 13 001aaa307 OC1 14 DIAG 15 IN2 − 16 IN2 + 17 MGW245 Fig.3 Pin configuration (TDA1564TH). Fig.4 Pin configuration (TDA1564J). FUNCTIONAL DESCRIPTION The heatsink has to be designed for use with music signals. With such a heatsink, the thermal protection will disable the BTL mode when the junction temperature exceeds 150 °C. In this case, the output power is limited to 5 W per amplifier. The TDA1564 contains two identical amplifiers with differential inputs. At low output power [up to output amplitudes of 3 V (RMS) at VP = 14.4 V], the device operates as a normal SE amplifier. When a larger output voltage swing is needed, the circuit switches internally to BTL operation. The gain of each amplifier is internally fixed at 26 dB. The device can be switched to the following modes via the MODE pin: With a sine wave input signal, the dissipation of a conventional BTL amplifier (up to 2 W output power) is more than twice the dissipation of the TDA1564 (see Fig.12). • Standby with low standby current (< 50 µA) • Mute condition, DC adjusted • On, operation. In normal use, when the amplifier is driven with music-like signals, the high (BTL) output power is only needed for a small percentage of time. Assuming that a music signal has a normal (Gaussian) amplitude distribution, the dissipation of a conventional BTL amplifier with the same output power is approximately 70 % higher (see Figs 13 and 14. 2004 Jan 27 The device is fully protected against a short-circuit of the output pins to ground and to the supply voltage. It is also protected against a short-circuit of the loudspeaker and against high junction temperatures. In the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off, causing low dissipation. With a permanent short-circuit of the 6 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 loudspeaker, the output stage will be repeatedly switched on and off. The duty cycle in the ‘on’ condition is low enough to prevent excessive dissipation. – When a short-circuit occurs (for at least 10 ms) at the outputs to ground or the supply voltage, the output stages are switched off to prevent excessive dissipation; the outputs are switched on again approximately 500 ms after the short-circuit is removed, during this short-circuit condition the protection pin is LOW The device also has two independent DC offset detection circuits that can detect DC output voltages across the speakers. With a DC offset greater than 2 V, a warning is given on the diagnostic pin. There will be no internal shutdown with DC offsets. – When a short-circuit occurs across the load (for at least 10 ms), the output stages are switched off for approximately 500 ms; after this time, a check is made to see whether the short-circuit is still present When the supply voltage drops below 6 V (e.g. engine start), the circuit mutes immediately, avoiding clicks from the electronic circuit preceding the power amplifier. – The power dissipation in any short-circuit condition is very low. The voltage of the SE electrolytic capacitor (pin 4) is kept at 0.5VP by means of a voltage buffer (see Fig.2). The value of this capacitor has an important influence on the output power in SE mode, especially at low signal frequencies. A high value is recommended to minimize dissipation at low frequencies. • During start-up/shutdown, when the product is internally muted • Temperature prewarning: – A prewarning (junction temperature > 145 °C) indicates that the temperature protection will become active. The prewarning can be used to reduce the input signal and thus reduce the power dissipation. The diagnostic output is an open-collector output and requires a pull-up resistor. It gives the following outputs: • Clip detection at THD = 2.5 % • Offset detection: • Short-circuit protection: – One of the channels has a DC output voltage greater than 2 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VP PARAMETER supply voltage CONDITIONS MIN. MAX. UNIT operating − 18 V non-operating − 30 V load dump; tr > 2.5 ms − 45 V VP(sc) short-circuit safe voltage − 18 V Vrp reverse polarity voltage − 6 V IORM repetitive peak output current − 4 A Ptot total power dissipation − 60 W Tstg storage temperature −55 +150 °C Tvj virtual junction temperature − 150 °C Tamb ambient temperature −40 +85 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-c) thermal resistance from junction to case note 1 1.3 K/W Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W Note 1. The value of Rth(c-h) depends on the application (see Fig.5). 2004 Jan 27 7 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 Heatsink design There are two parameters that determine the size of the heatsink. The first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the BTL mode. handbook, halfpage OUT 1 3.6 K/W With a conventional BTL amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 6.5 W. At a virtual junction temperature of 150 °C and a maximum ambient temperature of 65 °C, Rth(vj-c) = 1.3 K/W and Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink virtual junction OUT 2 OUT 1 3.6 K/W 3.6 K/W 3.6 K/W 0.6 K/W 0.6 K/W 150 – 65 should be: ---------------------- – 1.3 – 0.2 = 5 K/W 2 × 6.5 MGC424 0.1 K/W Compared to a conventional BTL amplifier, the TDA1564 has a higher efficiency. The thermal resistance of the heatsink should be: 145 – 65 1.7 ---------------------- – 1.3 – 0.2 = 9 K/W 2 × 6.5 2004 Jan 27 OUT 2 case Fig.5 Thermal equivalent resistance network. 8 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measured in Fig.9; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP supply voltage note 1; Fig.17 6.0 Iq(tot) total quiescent current RL = ∞; Fig.16 − Istb standby current − VCSE average electrolytic capacitor voltage at pin 4 − ∆VO DC output offset voltage on state mute state 14.4 18.0 V 95 150 mA 1 50 µA 7.1 − V − − 100 mV − − 100 mV Mode select switch; see Fig.6 standby condition 0 − 1 V mute condition 2 − 3 V on condition 4 5 VP V switch current through pin 6 VMODE = 5 V − 25 40 µA VDIAG output voltage at the diagnostic output pin IDIAG = 2 mA; during any fault − condition or clip detect − 0.5 V IDIAG current through the diagnostic pin during any fault condition or clip detect 2 − − mA VO(DC) DC output voltage detection levels 1.4 2 2.5 V Tpre prewarning temperature − 145 − °C Tdis(BTL) BTL disable temperature − 150 − °C VMODE IMODE(sw) voltage at mode select pin Diagnostic Protection note 2 Notes 1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V. 2. If the junction temperature exceeds 150 °C, the output power is limited to 5 W per channel. 2004 Jan 27 9 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier V MODE handbook, halfpage TDA1564 18 (V) Operating 4 3 Mute 2 1 Standby 0 MGR176 Fig.6 Switching levels of the mode select pin. 2004 Jan 27 10 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; CCSE = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.9; unless otherwise specified. SYMBOL Po THD PARAMETER output power total harmonic distortion CONDITIONS MIN. TYP. MAX. UNIT THD = 0.5 %; Fig.18 15 19 − W THD = 10 %; Fig.18 23 25 − W EIAJ − 38 − W VP = 13.2 V; THD = 0.5 % − 16 − W VP = 13.2 V; THD = 10 % − 20 − W Po = 1 W; note 1; Fig.19 − 0.1 − % P power dissipation see Figs 12 and 13 W Bp power bandwidth THD = 1 %; Po = −1 dB with respect to 15 W − 20 to 15000 − Hz fro(l) low frequency roll-off −1 dB; note 2 − 25 − Hz fro(h) high frequency roll-off −1 dB 130 − − kHz Gv closed-loop voltage gain Po = 1 W; Fig.21 25 26 27 dB SVRR supply voltage ripple rejection Rs = 0 Ω; Vripple = 2 V (p-p); Fig.22 45 65 − dB on/mute standby; f = 100 Hz to 10 kHz CMRR common mode rejection ratio Zi input impedance Rs = 0 Ω 45 − − dB 70 90 − dB 90 120 150 kΩ ∆Zi mismatch in input impedance − 1 − % VSE-BTL SE to BTL switch voltage level note 3 − 3 − V Vout output voltage mute (RMS value) Vi = 1 V (RMS) − 100 150 µV Vn(o) noise output voltage αcs channel separation ∆Gv channel unbalance on; Rs = 0 Ω; note 4 − 100 150 µV on; Rs = 10 kΩ; note 4 − 105 − µV mute; note 5 − 100 150 µV Rs = 0 Ω; Po = 15 W; Fig.23 40 70 − dB − − 1 dB Notes 1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz. 2. Frequency response externally fixed (input capacitors determine the low frequency roll-off). 3. The SE to BTL switch voltage level depends on the value of VP. 4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz. 5. Noise output voltage is independent of Rs. 2004 Jan 27 11 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, halfpage Io handbook, halfpage V o 10 µs max MGR177 t 0 short-circuit removed max short-circuit to ground DIAG CLIP 0 500 ms 0 t 500 ms maximum current 500 ms t short-circuit to supply pins MGW246 Fig.7 Clip detection waveforms. Fig.8 Protection waveforms. (1) 2004 Jan 27 12 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 TEST AND APPLICATION INFORMATION handbook, full pagewidth VP1 VP2 5 13 220 nF 2200 µF TDA1564J − 0.5Rs 100 nF 3.9 Ω 10 OUT2− IN2− 16 + 100 nF 220 nF 4Ω − 0.5Rs IN2+ 17 220 nF 3.9 Ω 11 OUT2+ + 60 kΩ 60 kΩ Vref 25 kΩ CIN 3 4 CSE 1000 µF 10 µF 0.5Rs 60 kΩ 60 kΩ IN1− 2 + 7 OUT1− 220 nF − 4Ω 0.5Rs IN1+ 1 3.9 Ω 100 nF + 8 OUT1+ 3.9 Ω 220 nF 100 nF − STANDBY LOGIC CLIP AND DIAGNOSTIC signal ground power ground 6 12 14 15 9 MODE OC2 OC1 DIAG GND Vms 22 µF 22 µF Rpu Vlogic MGW247 Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection. Fig.9 Application diagram (TDA1564J). 2004 Jan 27 13 VP Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, full pagewidth TDA1564J TDA1565J In1 RL 2000 In2 sgnd sgnd diag Mute GND On Off Out1 Out2 VP MGW248 Dimensions in mm. Fig.10 PCB layout (component side) for the application of Fig.9. 2004 Jan 27 14 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, full pagewidth 100 nF 100 nF High efficiency 3.9 Ω In2 3.9 Ω Cool Power 220 nF 220 nF 17 In1 1 220 nF Continuous offset detection GND 2.7 kΩ 4.7 kΩ 24 kΩ 100 nF 3.9 Ω 100 nF VP Out2 Out1 MGW249 Dimensions in mm. Fig.11 PCB layout (soldering side) for the application of Fig.9. 2004 Jan 27 15 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 MGW250 25 MGW251 25 handbook, halfpage handbook, halfpage (1) P (W) P (W) 20 20 (1) (2) 15 15 (2) 10 10 5 5 0 0 0 4 8 12 16 20 0 2 6 4 Po (W) 8 10 Po (W) Input signal 1 kHz, sinusoidal; VP = 14.4 V. (1) For a conventional BTL amplifier. (2) For TDA1564. (1) For a conventional BTL amplifier. (2) For TDA1564. Fig.12 Power dissipation as a function of output power; sine wave driven. Fig.13 Power dissipation as a function of output power; pink noise through IEC-60268 filter. 430 Ω input 2.2 µF 3.3 kΩ 330 Ω 91 nF 2.2 µF 3.3 kΩ 470 nF 68 nF 10 kΩ MGC428 Fig.14 IEC-60268 filter. 2004 Jan 27 16 output Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, full pagewidth VP1 VP2 5 13 220 nF 2200 µF VP TDA1564J − 100 nF 3.9 Ω 10 OUT2− IN2− 16 + 100 nF 220 nF 4Ω − IN2+ 17 220 nF + 60 kΩ 60 kΩ Vref 25 kΩ CIN 3 4 CSE 1000 µF 10 µF IEC-60268 FILTER 60 kΩ 60 kΩ IN1− 2 pink noise 3.9 Ω 11 OUT2+ + 7 OUT1− 220 nF − 3.9 Ω 4Ω IN1+ 1 100 nF + 8 OUT1+ 3.9 Ω 220 nF 100 nF − INTERFACE signal ground MS OFFSET DIAG power ground 6 12 14 15 9 MODE OC2 OC1 DIAG GND Vms 22 µF 22 µF Rpu Vlogic MGW252 Fig.15 Test and application diagram for dissipation measurements with a music-like signal (pink noise). 2004 Jan 27 17 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 MGW253 150 MGW254 200 handbook, halfpage handbook, halfpage IP IP (mA) (mA) 150 100 3 100 50 2 50 1 0 0 0 5 10 15 20 0 25 1 2 3 4 5 VMODE (V) VP (V) VP = 14.4 V (1) Standby. (2) Mute. (3) Operating. VMODE = 5 V; RI = ∞. Fig.16 Quiescent current as a function of supply voltage. Fig.17 Supply current as a function of VMODE. MGW255 40 Po (W) MGW256 102 handbook, halfpage handbook, halfpage THD + N (%) (1) 10 30 (2) (3) 20 1 10 10−1 10−2 10−2 0 8 10 12 14 16 18 VP (V) (1) (2) (3) 10−1 1 10 Po (W) 102 (1) TDH + N = 10 %. (2) TDH + N = 2.5 %. (3) TDH + N = 0.5 %. (1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 kHz. Fig.18 Output power as a function of supply voltage. 2004 Jan 27 Fig.19 THD + noise as a function of output power. 18 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 MGW257 10 MGW258 28 handbook, halfpage handbook, halfpage Gv (dB) THD + N (%) 26 (1) 1 24 (2) 10−1 22 10−2 10 102 103 104 20 10 105 f (Hz) 102 103 104 105 106 f (Hz) (1) Po = 10 W. (2) Po = 1 W. Fig.20 THD + noise as a function of frequency. Fig.21 Voltage gain as a function of frequency. MGW259 −20 MGW260 −20 handbook, halfpage handbook, halfpage SVRR (dB) αcs (dB) (1) −40 −40 −60 −60 (1) (2) −80 −80 (2) −100 −120 10 −100 102 103 104 −120 10 105 f (Hz) 103 104 105 f (Hz) (1) Po2 = 10 W. (2) Po2 = 1 W. (1) On/Mute. (2) Standby. Fig.23 Channel separation as a function of frequency. Fig.22 SVRR as a function of frequency. 2004 Jan 27 102 19 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 handbook, full pagewidth MBH691 VP Vload 0 −VP VP Vmaster 1/2 VP 0 VP Vslave 1/2 VP 0 0 1 2 See Fig.9 Vload = V7 − V8 or V11 − V10. Vmaster = V7 or V11. Vslave = V8 or V10. Fig.24 Output waveforms. 2004 Jan 27 20 t (ms) 3 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 APPLICATION NOTES Advantages of high efficiency 1. Power conversion improvement (power supply): Usually, the fact that the reduction of dissipation is directly related to supply current reduction, is neglected. One advantage is less voltage drop in the whole supply chain. Another advantage is less stress for the coil in the supply line. Even the adapter or supply circuit remains cooler than before due to the reduced heat dissipation in the whole chain because more supply current will be converted into output power. VP = 14.4 V handbook, halfpage Supply current reduction of 32% Same junction temperature choice Power dissipation reduction of 40% at Po = 1.6 W Same heatsink size 2. Power dissipation reduction: This is the best known advantage of high efficiency amplifiers. 3. Heatsink size reduction: The heatsink size of a conventional amplifier may be reduced with approximately 50 % at Vp = 14.4 V when the TDA1564 will be used. In that case, the maximum heatsink temperature will remain the same. Heatsink size reduction of 50% Heatsink temperature reduction of 40% MGS824 4. Heatsink temperature reduction: The power dissipation and the thermal resistance of the heatsink determine the heatsink temperature rise. Fig.25 Heatsink design. When the same heatsink size is used from a conventional amplifier, the maximum heatsink temperature decreases and also the maximum junction temperature, which extends the life of this semiconductor device. The maximum dissipation with music-like input signals decreases by 40 %. Advantage of the concept used by TDA1564 The TDA1564 is highly efficient under all conditions, because it uses a single-ended capacitor to create a non-dissipating half supply voltage. Other concepts rely on the fact that both input signals are the same in amplitude and phase. With the concept of a SE capacitor it means that it doesn’t matter what kind of signal processing is done on the input signals. For example, amplitude difference, phase shift or delays between both input signals, or other DSP processing, have no impact on the efficiency. It is clear that the use of the TDA1564 saves a significant amount of energy. The maximum supply current decreases by approximately 32 %, that reduces the dissipation in the amplifier as well as in the whole supply chain. The TDA1564 allows a heatsink size reduction of approximately 50 % or the heatsink temperature decreases by 40 % when the heatsink size hasn’t been changed. 2004 Jan 27 21 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 INTERNAL PIN CONFIGURATIONS PIN NAME TDA1564TH EQUIVALENT CIRCUIT TDA1564J 17, 18, 13, 14 1, 2, 16, 17 and 19 and 3 IN1+, IN1−, IN2−, IN2+ and CIN VP1, VP2 VP1, VP2 17, 18, 13, 14 J 1, 2, 16, 17 19 3 MGR182 16 4 CSE VP2 16 TH 4 J MGW261 2 6 MODE TH 2 J 6 MGW262 2004 Jan 27 22 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 PIN NAME TDA1564TH 3, 8 EQUIVALENT CIRCUIT TDA1564J 7, 11 OUT1−, OUT2+ VP1, VP2 3, 8 TH 7, 11 J 16 TH J 4 MGR185 4, 7 8, 10 OUT1+, OUT2− VP1, VP2 4, 7 TH 8, 10 J 16 TH 4 J MGR186 9, 12 12, 14 OC1, OC2 VP2 TH 9, 12 J 12, 14 MGW263 15 15 DIAG VP2 15 MGW264 2004 Jan 27 23 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 PACKAGE OUTLINES HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-3 E D A x X c E2 y HE v M A D1 D2 10 1 pin 1 index Q A A2 E1 (A3) A4 θ Lp detail X 20 11 Z w M bp e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A2 max. 3.5 3.5 3.2 A3 0.35 A4(1) D1 D2 E(2) E1 E2 e HE Lp Q +0.08 0.53 0.32 16.0 13.0 −0.04 0.40 0.23 15.8 12.6 1.1 0.9 11.1 10.9 6.2 5.8 2.9 2.5 1.27 14.5 13.9 1.1 0.8 1.7 1.5 bp c D(2) v w x y 0.25 0.25 0.03 0.07 Z θ 2.5 2.0 8° 0° Notes 1. Limits per individual lead. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 02-02-12 03-07-23 SOT418-3 2004 Jan 27 EUROPEAN PROJECTION 24 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side A2 d B j E A L3 L Q c 1 v M 17 e1 Z bp e e2 m w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 e e2 Eh j L L3 m Q v w x Z (1) 5.08 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 e1 2.54 1.27 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 99-12-17 03-03-12 SOT243-1 2004 Jan 27 EUROPEAN PROJECTION 25 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 SOLDERING cooling) vary between 100 and 200 seconds depending on heating method. Introduction Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface temperature of the packages should preferably be kept: This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). • below 225 °C (SnPb process) or below 245 °C (Pb-free process) There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. – for all the BGA, HTSSON..T and SSOP-T packages – for packages with a thickness ≥ 2.5 mm – for packages with a thickness < 2.5 mm and a volume ≥ 350 mm3 so called thick/large packages. • below 240 °C (SnPb process) or below 260 °C (Pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. The total contact time of successive solder waves must not exceed 5 seconds. To overcome these problems the double-wave soldering method was specifically developed. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. If wave soldering is used the following conditions must be observed for optimal results: • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. MANUAL SOLDERING • For packages with leads on two sides and a pitch (e): Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. – larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; – smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. Surface mount packages The footprint must incorporate solder thieves at the downstream end. REFLOW SOLDERING • For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and 2004 Jan 27 26 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 °C or 265 °C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. MANUAL SOLDERING Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Suitability of IC packages for wave, reflow and dipping soldering methods SOLDERING METHOD PACKAGE(1) MOUNTING WAVE Through-hole mount CPGA, HCPGA REFLOW(2) DIPPING suitable − suitable DBS, DIP, HDIP, RDBS, SDIP, SIL suitable(3) − − Through-holesurface mount PMFP(4) not suitable not suitable − Surface mount BGA, HTSSON..T(5), LBGA, LFBGA, SQFP, SSOP-T(5), TFBGA, USON, VFBGA not suitable suitable − DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS not suitable(6) suitable − PLCC(7), SO, SOJ suitable suitable − not recommended(7)(8) suitable − SSOP, TSSOP, VSO, VSSOP not recommended(9) suitable − CWQCCN..L(11), PMFP(10), WQCCN32L(11) not suitable not suitable − LQFP, QFP, TQFP Notes 1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”. 3. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 4. Hot bar soldering or manual soldering is suitable for PMFP packages. 5. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible. 6. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 7. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 2004 Jan 27 27 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 8. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 9. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 10. Hot bar or manual soldering is suitable for PMFP packages. 11. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. 2004 Jan 27 28 Philips Semiconductors Preliminary specification High efficiency 2 × 25 W/4 Ω stereo car radio power amplifier TDA1564 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Jan 27 29 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R32/04/pp30 Date of release: 2004 Jan 27 Document order number: 9397 750 12613