SANYO MCH6613_06

MCH6613
Ordering number : EN6920A
SANYO Semiconductors
DATA SHEET
MCH6613
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
Gate-to-Source Voltage
VGSS
±10
±10
V
ID
0.35
--0.2
A
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
IDP
PD
PW≤10µs, duty cycle≤1%
1.4
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--0.8
0.8
V
A
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=80mA
150
V
1
µA
±10
µA
Forward Transfer Admittance
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
3.7
5.2
Ω
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
6.4
12.8
Input Capacitance
RDS(on)3
Ciss
7.0
pF
VDS=10V, f=1MHz
VDS=10V, f=1MHz
5.9
pF
2.3
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Marking : FM
1.3
220
V
mS
Ω
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
http://semicon.sanyo.com/en/network
TOKYO OFFICE Tokyo Bldg.,
1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 52506PE MS IM TB-00002278 / 52101 TS IM TA-3241 No.6920-1/7
MCH6613
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
Rise Time
tr
td(off)
See specified Test Circuit.
65
ns
See specified Test Circuit.
155
ns
Turn-OFF Delay Time
Fall Time
tf
Qg
Total Gate Charge
ns
See specified Test Circuit.
120
ns
VDS=10V, VGS=10V, ID=150mA
1.58
nC
nC
Gate-to-Source Charge
Qgs
Qgd
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
0.26
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
V(BR)DSS
ID=--1mA, VGS=0V
0.31
nC
1.2
V
--1
µA
±10
µA
[P-channel]
Drain-to-Source Breakdown Voltage
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--100µA
--0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=--10V, ID=--50mA
80
8
10.4
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=--30mA, VGS=--2.5V
11
15.4
Ω
ID=--1mA, VGS=--1.5V
27
54
Cutoff Voltage
--1.4
110
ID=--50mA, VGS=--4V
V
mS
Ω
Input Capacitance
Ciss
VDS=--10V, f=1MHz
7.5
pF
Output Capacitance
Coss
pF
Crss
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
5.7
Reverse Transfer Capacitance
1.8
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
24
ns
Rise Time
tr
td(off)
See specified Test Circuit.
55
ns
See specified Test Circuit.
120
ns
Turn-OFF Delay Time
Fall Time
tf
Qg
Total Gate Charge
See specified Test Circuit.
130
ns
VDS=--10V, VGS=--10V, ID=--100mA
1.43
nC
0.18
nC
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--100mA
VDS=--10V, VGS=--10V, ID=--100mA
Diode Forward Voltage
VSD
IS=--100mA, VGS=0V
2.0
6
5
0.25
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Top view
0 to 0.02
1
2
3
0.65
nC
--1.2
V
Electrical Connection
4
0.3
0.85
0.07
--0.83
0.15
2.1
1.6
0.25
Package Dimensions
unit : mm
7022A-006
0.25
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
SANYO : MCPH6
No.6920-2/7
MCH6613
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
ID=80mA
RL=187.5Ω
VOUT
D
VIN
VIN
PW=10µs
D.C.≤1%
ID= --50mA
RL=300Ω
G
G
P.G
MCH6613
50Ω
ID -- VDS
--3.5V
V
0.10
0.08
VGS=1.5V
0.06
0.04
V
.5
--2
V
Drain Current, ID -- A
--0.08
[Pch]
--0.07
--6.0
V
2
--4
.
--0.09
.0V
3.0
4.0V
0.12
ID -- VDS
--0.10
6.0
Drain Current, ID -- A
3.5V
S
[Nch]
2.
5V
0.16
MCH6613
50Ω
S
V
P.G
0.14
VOUT
D
VIN
--3
.0
PW=10µs
D.C.≤1%
0V
--4V
0V
4V
0V
VDD= --15V
--2.0V
--0.06
--0.05
--0.04
--0.03
VGS= --1.5V
--0.02
0.02
--0.01
0
0
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
[Nch]
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
--2.0
IT00077
ID -- VGS
[Pch]
VDS= --10V
--0.16
25
°C
Ta=
0.20
--0.6
--0.20
--0.18
75
°C
Drain Current, ID -- A
0.25
--0.4
Drain-to-Source Voltage, VDS -- V
--25
°C
VDS=10V
--0.2
IT00029
ID -- VGS
0.30
0
1.0
0.15
0.10
25°C
--25
°C
0.4
--0.14
--0.12
C
0.3
--0.10
75°
0.2
Ta=
0.1
Drain Current, ID -- A
0
--0.08
--0.06
--0.04
0.05
--0.02
0
0
0
0.5
1.0
1.5
2.5
2.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
10
0
3.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Gate-to-Source Voltage, VGS -- V
IT00030
[Nch]
RDS(on) -- VGS
30
--4.0
IT00078
[Pch]
Ta=25°C
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
9
8
7
6
80mA
5
4
ID=40mA
3
2
1
25
20
15
ID= --30mA
--50mA
10
5
0
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
IT00031
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
--9
--10
IT00079
No.6920-3/7
MCH6613
RDS(on) -- ID
10
[Nch]
7
5
Ta=75°C
25°C
--25°C
2
1.0
0.01
2
3
5
7
2
0.1
3
Drain Current, ID -- A
--25°C
2
3
5
7
2
0.1
3
Drain Current, ID -- A
2
Ta=75°C
7
--25°C
25°C
2
2
3
5
7
2
0.01
3
Drain Current, ID -- A
2
1
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
7
160
IT00035
2
--0.1
3
IT00080
[Pch]
5
3
2
Ta=75°C
25°C
10
--25°C
7
5
3
2
2
3
5
7
2
--0.1
3
IT00081
RDS(on) -- ID
[Pch]
VGS= --1.5V
5
3
2
100
7
5
Ta=75°C
3
2
--25°C
2
25°C
3
18
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
3
5
VGS= --2.5V
[Nch]
5V
=2.
GS
V
,
A
4.0V
40m
S=
I D=
VG
,
A
80m
I D=
4
3
RDS(on) -- ID
10
--0.0001
5
6
5
2
IT00034
RDS(on) -- Ta
7
2
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
3
1.0
0.001
3
7
5
3
25°C
Drain Current, ID -- A
[Nch]
7
5
--25°C
5
1.0
--0.01
5
VGS=1.5V
10
7
IT00033
RDS(on) -- ID
100
Ta=75°C
10
100
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
25°C
2
2
7
Ta=75°C
1.0
0.01
3
Drain Current, ID -- A
[Nch]
7
3
5
1.0
--0.01
5
VGS=2.5V
5
VGS= --4V
IT00032
RDS(on) -- ID
10
[Pch]
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
VGS=4V
3
RDS(on) -- ID
100
5
7
2
--0.001
3
Drain Current, ID -- A
IT00082
RDS(on) -- Ta
[Pch]
16
V
2.5
14
,
mA
12
= -V GS
0
--3
I D=
10
,
mA
--50
I D=
8
V
4.0
= -V GS
6
4
2
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT00083
No.6920-4/7
MCH6613
yfs -- ID
[Nch]
VDS=10V
7
5
25°C
3
5°C
2
Ta= --
2
75°C
0.1
7
5
3
2
0.01
0.01
2
3
5
7
2
0.1
3
5
3
2
5
3
2
0.01
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
[Nch]
IS -- VSD
5
3
IT00084
[Pch]
VGS=0V
3
5
3
7
5
3
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
3
td (off)
tf
100
7
tr
5
3
td(on)
2
10
0.01
2
3
5
7
--0.9
--1.0
[Pch]
5
3
2
tf
td(off)
100
7
tr
5
td(on)
3
2
10
--0.01
2
3
5
7
Drain Current, ID -- A
[Nch]
Ciss, Coss, Crss -- VDS
100
--0.1
IT00086
[Pch]
f=1MHz
7
5
--1.1
IT00085
VDD= --15V
VGS= --4V
7
f=1MHz
7
--0.8
SW Time -- ID
1000
IT00038
Ciss, Coss, Crss -- VDS
100
--0.7
Diode Forward Voltage, VSD -- V
2
0.1
Drain Current, ID -- A
--0.6
IT00037
Switching Time, SW Time -- ns
5
2
--0.01
--0.5
1.2
[Nch]
VDD=15V
VGS=4V
7
Ta=
7
2
2
C
7
--0.1
--25°
0.1
25°C
2
2
5°C
Source Current, IS -- A
3
Ta
=7
5°
C
25
°C
--2
5°C
Source Current, IS -- A
75°C
7
5
Switching Time, SW Time -- ns
5°C
2
Ta= --
0.1
VGS=0V
7
5
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
25°C
IT00036
IS -- VSD
1.0
[Pch]
VDS= --10V
7
5
Drain Current, ID -- A
yfs -- ID
1.0
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, yfs -- S
1.0
3
2
10
Ciss
7
Coss
5
3
3
2
10
Ciss
7
Coss
5
3
Crss
2
2
Crss
1.0
1.0
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT00039
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT00087
No.6920-5/7
MCH6613
VGS -- Qg
10
VDS=10V
ID=150mA
VGS -- Qg
--10
8
7
6
5
4
3
2
1
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch]
2
0.8
1.0
1.2
7
5
10m
ID=0.35A
s
3
DC
2
7
5
3
ms
ope
rat
Operation in
this area is
limited by RDS(on).
0.1
100
ion
[Pch]
IDP= --0.8A
1m
0.01
2
1.0
3
0.8
ms
3
ID= --0.2A
2
10
DC
--0.1
0m
s
op
era
tio
7
n
Operation in this
area is limited by RDS(on).
5
5
7
2
10
2
3
5
IT02877
Drain-to-Source Voltage, VDS -- V
PD -- Ta
[Pch, Nch]
1.0
s
10
3
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
2
1.6
IT00088
PW≤10µs
1m
s
1.4
ASO
7
Drain Current, ID -- A
Drain Current, ID -- A
0.6
--1.0
5
1.0
0.4
Total Gate Charge, Qg -- nC
PW≤10µs
IDP=1.4A
0.2
0
1.6
3
Allowable Power Dissipation, PD -- W
[Pch]
VDS= --10V
ID= --100mA
--9
Gate-to-Source Voltage, VGS -- V
9
Gate-to-Source Voltage, VGS -- V
[Nch]
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
--0.01
--1.0
2
3
5
7
--10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT02878
M
ou
nte
do
na
0.6
ce
ram
ic
bo
ard
0.4
(90
0m
m2
✕0
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02879
No.6920-6/7
MCH6613
Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
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or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2006. Specifications and information herein are subject
to change without notice.
PS No.6920-7/7