MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 Gate-to-Source Voltage VGSS ±10 ±10 V ID 0.35 --0.2 A Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD PW≤10µs, duty cycle≤1% 1.4 Mounted on a ceramic board (900mm2✕0.8mm)1unit --0.8 0.8 V A W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±8V, VDS=0V VDS=10V, ID=100µA 0.4 VDS=10V, ID=80mA 150 V 1 µA ±10 µA Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=80mA, VGS=4V ID=40mA, VGS=2.5V 2.9 3.7 Ω Static Drain-to-Source On-State Resistance 3.7 5.2 Ω ID=10mA, VGS=1.5V VDS=10V, f=1MHz 6.4 12.8 Input Capacitance RDS(on)3 Ciss 7.0 pF VDS=10V, f=1MHz VDS=10V, f=1MHz 5.9 pF 2.3 pF Output Capacitance Coss Reverse Transfer Capacitance Crss Marking : FM 1.3 220 V mS Ω Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70306 / 52506PE MS IM TB-00002278 / 52101 TS IM TA-3241 No.6920-1/7 MCH6613 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 19 Rise Time tr td(off) See specified Test Circuit. 65 ns See specified Test Circuit. 155 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge ns See specified Test Circuit. 120 ns VDS=10V, VGS=10V, ID=150mA 1.58 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA 0.26 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=150mA, VGS=0V 0.87 V(BR)DSS ID=--1mA, VGS=0V 0.31 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--100µA --0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--50mA 80 8 10.4 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--30mA, VGS=--2.5V 11 15.4 Ω ID=--1mA, VGS=--1.5V 27 54 Cutoff Voltage --1.4 110 ID=--50mA, VGS=--4V V mS Ω Input Capacitance Ciss VDS=--10V, f=1MHz 7.5 pF Output Capacitance Coss pF Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz 5.7 Reverse Transfer Capacitance 1.8 pF Turn-ON Delay Time td(on) See specified Test Circuit. 24 ns Rise Time tr td(off) See specified Test Circuit. 55 ns See specified Test Circuit. 120 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 130 ns VDS=--10V, VGS=--10V, ID=--100mA 1.43 nC 0.18 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--100mA VDS=--10V, VGS=--10V, ID=--100mA Diode Forward Voltage VSD IS=--100mA, VGS=0V 2.0 6 5 0.25 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 1 2 3 Top view 0 to 0.02 1 2 3 0.65 nC --1.2 V Electrical Connection 4 0.3 0.85 0.07 --0.83 0.15 2.1 1.6 0.25 Package Dimensions unit : mm 7022A-006 0.25 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 No.6920-2/7 MCH6613 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN ID=80mA RL=187.5Ω VOUT D VIN VIN PW=10µs D.C.≤1% ID= --50mA RL=300Ω G G P.G MCH6613 50Ω ID -- VDS --3.5V V 0.10 0.08 VGS=1.5V 0.06 0.04 V .5 --2 V Drain Current, ID -- A --0.08 [Pch] --0.07 --6.0 V 2 --4 . --0.09 .0V 3.0 4.0V 0.12 ID -- VDS --0.10 6.0 Drain Current, ID -- A 3.5V S [Nch] 2. 5V 0.16 MCH6613 50Ω S V P.G 0.14 VOUT D VIN --3 .0 PW=10µs D.C.≤1% 0V --4V 0V 4V 0V VDD= --15V --2.0V --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 0.02 --0.01 0 0 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V [Nch] --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 IT00077 ID -- VGS [Pch] VDS= --10V --0.16 25 °C Ta= 0.20 --0.6 --0.20 --0.18 75 °C Drain Current, ID -- A 0.25 --0.4 Drain-to-Source Voltage, VDS -- V --25 °C VDS=10V --0.2 IT00029 ID -- VGS 0.30 0 1.0 0.15 0.10 25°C --25 °C 0.4 --0.14 --0.12 C 0.3 --0.10 75° 0.2 Ta= 0.1 Drain Current, ID -- A 0 --0.08 --0.06 --0.04 0.05 --0.02 0 0 0 0.5 1.0 1.5 2.5 2.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 10 0 3.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT00030 [Nch] RDS(on) -- VGS 30 --4.0 IT00078 [Pch] Ta=25°C Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 80mA 5 4 ID=40mA 3 2 1 25 20 15 ID= --30mA --50mA 10 5 0 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 9 10 IT00031 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT00079 No.6920-3/7 MCH6613 RDS(on) -- ID 10 [Nch] 7 5 Ta=75°C 25°C --25°C 2 1.0 0.01 2 3 5 7 2 0.1 3 Drain Current, ID -- A --25°C 2 3 5 7 2 0.1 3 Drain Current, ID -- A 2 Ta=75°C 7 --25°C 25°C 2 2 3 5 7 2 0.01 3 Drain Current, ID -- A 2 1 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 7 160 IT00035 2 --0.1 3 IT00080 [Pch] 5 3 2 Ta=75°C 25°C 10 --25°C 7 5 3 2 2 3 5 7 2 --0.1 3 IT00081 RDS(on) -- ID [Pch] VGS= --1.5V 5 3 2 100 7 5 Ta=75°C 3 2 --25°C 2 25°C 3 18 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 5 VGS= --2.5V [Nch] 5V =2. GS V , A 4.0V 40m S= I D= VG , A 80m I D= 4 3 RDS(on) -- ID 10 --0.0001 5 6 5 2 IT00034 RDS(on) -- Ta 7 2 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3 1.0 0.001 3 7 5 3 25°C Drain Current, ID -- A [Nch] 7 5 --25°C 5 1.0 --0.01 5 VGS=1.5V 10 7 IT00033 RDS(on) -- ID 100 Ta=75°C 10 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C 2 2 7 Ta=75°C 1.0 0.01 3 Drain Current, ID -- A [Nch] 7 3 5 1.0 --0.01 5 VGS=2.5V 5 VGS= --4V IT00032 RDS(on) -- ID 10 [Pch] 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS=4V 3 RDS(on) -- ID 100 5 7 2 --0.001 3 Drain Current, ID -- A IT00082 RDS(on) -- Ta [Pch] 16 V 2.5 14 , mA 12 = -V GS 0 --3 I D= 10 , mA --50 I D= 8 V 4.0 = -V GS 6 4 2 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00083 No.6920-4/7 MCH6613 yfs -- ID [Nch] VDS=10V 7 5 25°C 3 5°C 2 Ta= -- 2 75°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 2 0.1 3 5 3 2 5 3 2 0.01 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A [Nch] IS -- VSD 5 3 IT00084 [Pch] VGS=0V 3 5 3 7 5 3 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 3 td (off) tf 100 7 tr 5 3 td(on) 2 10 0.01 2 3 5 7 --0.9 --1.0 [Pch] 5 3 2 tf td(off) 100 7 tr 5 td(on) 3 2 10 --0.01 2 3 5 7 Drain Current, ID -- A [Nch] Ciss, Coss, Crss -- VDS 100 --0.1 IT00086 [Pch] f=1MHz 7 5 --1.1 IT00085 VDD= --15V VGS= --4V 7 f=1MHz 7 --0.8 SW Time -- ID 1000 IT00038 Ciss, Coss, Crss -- VDS 100 --0.7 Diode Forward Voltage, VSD -- V 2 0.1 Drain Current, ID -- A --0.6 IT00037 Switching Time, SW Time -- ns 5 2 --0.01 --0.5 1.2 [Nch] VDD=15V VGS=4V 7 Ta= 7 2 2 C 7 --0.1 --25° 0.1 25°C 2 2 5°C Source Current, IS -- A 3 Ta =7 5° C 25 °C --2 5°C Source Current, IS -- A 75°C 7 5 Switching Time, SW Time -- ns 5°C 2 Ta= -- 0.1 VGS=0V 7 5 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 25°C IT00036 IS -- VSD 1.0 [Pch] VDS= --10V 7 5 Drain Current, ID -- A yfs -- ID 1.0 Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S 1.0 3 2 10 Ciss 7 Coss 5 3 3 2 10 Ciss 7 Coss 5 3 Crss 2 2 Crss 1.0 1.0 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT00039 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 No.6920-5/7 MCH6613 VGS -- Qg 10 VDS=10V ID=150mA VGS -- Qg --10 8 7 6 5 4 3 2 1 --8 --7 --6 --5 --4 --3 --2 --1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC IT00040 ASO [Nch] 2 0.8 1.0 1.2 7 5 10m ID=0.35A s 3 DC 2 7 5 3 ms ope rat Operation in this area is limited by RDS(on). 0.1 100 ion [Pch] IDP= --0.8A 1m 0.01 2 1.0 3 0.8 ms 3 ID= --0.2A 2 10 DC --0.1 0m s op era tio 7 n Operation in this area is limited by RDS(on). 5 5 7 2 10 2 3 5 IT02877 Drain-to-Source Voltage, VDS -- V PD -- Ta [Pch, Nch] 1.0 s 10 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit 2 1.6 IT00088 PW≤10µs 1m s 1.4 ASO 7 Drain Current, ID -- A Drain Current, ID -- A 0.6 --1.0 5 1.0 0.4 Total Gate Charge, Qg -- nC PW≤10µs IDP=1.4A 0.2 0 1.6 3 Allowable Power Dissipation, PD -- W [Pch] VDS= --10V ID= --100mA --9 Gate-to-Source Voltage, VGS -- V 9 Gate-to-Source Voltage, VGS -- V [Nch] Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm)1unit --0.01 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT02878 M ou nte do na 0.6 ce ram ic bo ard 0.4 (90 0m m2 ✕0 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02879 No.6920-6/7 MCH6613 Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2006. Specifications and information herein are subject to change without notice. PS No.6920-7/7