FW905 Ordering number : EN8754 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW905 General-Purpose Switching Device Applications Features • • Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 2.5V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 20 --20 V Gate-to-Source Voltage VGSS ±10 ±10 V 7 --6 A 52 --52 A Drain Current (DC) Drain Current (PW≤10µs) ID IDP Allowable Power Dissipation PD Total Dissipation PT Duty cycle≤1% Mounted on a ceramic board (1500mm2✕0.8mm)1unit, PW≤10s Mounted on a ceramic board (1500mm2✕0.8mm), PW≤10s 2.3 W 2.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 V 1 µA ±10 µA 1.3 V 18 24 mΩ 20 33 mΩ Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 RDS(on)2 ID=7A, VGS=4V ID=3A, VGS=2.5V Input Capacitance Ciss VDS=10V, f=1MHz 1530 pF Output Capacitance Coss VDS=10V, f=1MHz 230 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 215 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : W905 VDS=10V, ID=7A 0.5 9 15 S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 22406PA MS IM TB-00002087 No.8754-1/6 FW905 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 19 Rise Time tr td(off) See specified Test Circuit. 225 ns See specified Test Circuit. 125 ns tf Qg See specified Test Circuit. 125 ns VDS=10V, VGS=4V, ID=7A 18.5 nC 3.4 nC Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=7A VDS=10V, VGS=4V, ID=7A Diode Forward Voltage VSD IS=7A, VGS=0V ns 4.8 0.79 nC 1.2 V --1 µA ±10 µA --1.4 V [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=--1mA, VGS=0V --20 V VDS=--20V, VGS=0V IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--1mA yfs RDS(on)1 VDS=--10V, ID=--6A RDS(on)2 Ciss 1720 pF 260 pF 245 pF ns --0.4 7.8 ID=--6A, VGS=--4V 13 S 30 40 mΩ 42 59 mΩ Output Capacitance Coss ID=--3A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 19 Rise Time tr td(off) See specified Test Circuit. 390 ns See specified Test Circuit. 110 ns Input Capacitance Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 145 ns VDS=--10V, VGS=--4V, ID=--6A 18.4 nC 3.2 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--6A VDS=--10V, VGS=--4V, ID=--6A Diode Forward Voltage VSD IS=--6A, VGS=0V Package Dimensions unit : mm 7005-003 --0.82 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 Top view 5 4 1.27 V 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.1 5.0 1.5 1.8 MAX 0.43 0.595 6.0 4.4 1 nC --1.2 Electrical Connection 0.3 8 5.2 SANYO : SOP8 No.8754-2/6 FW905 Switching Time Test Circuit [N-channel] [P-channel] VDD=10V VIN VDD= --10V VIN 4.5V 0V 0V --4V ID=5A RL=2Ω VIN D ID= --6A RL=1.67Ω VIN D VOUT VOUT PW=10µs D.C.≤1% PW=10µs D.C.≤1% G G FW905 3.0 VGS=1.5V 2.5 2.0 1.5 1.0 --4 --2 . --1.5V V 4.5V 3.5 [Pch] --5.0 Drain Current, ID -- A --5 V --6 2.5V 2.0 4.0 S ID -- VDS [Nch] V 3.0V 4.0V 4.5 50Ω 0V ID -- VDS 5.0 Drain Current, ID -- A FW905 P.G S --4.0V --2.5 50Ω --8.0V --6.0V P.G --3 --2 --1 VGS= --1.0V 0.5 0 0 0.3 Drain-to-Source Voltage, VDS -- V ID -- VGS 0.4 0 [Nch] --6 Drain Current, ID -- A 6 25° C 1 --0.4 --0.5 --0.6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 1.8 IT05893 --0.9 --1.0 IT09896 [Pch] --4 --3 --2 0 0 --0.8 --5 --1 0 --0.7 VDS= --10V 75 °C 2 --25°C 4 --0.3 ID -- VGS --8 --7 5 --0.2 Drain-to-Source Voltage, VDS -- V 7 3 --0.1 IT05892 VDS=10V Ta=7 5 Drain Current, ID -- A 8 0.35 --25 °C 0.25 °C 0.2 25 0.15 °C 0.1 0.05 Ta = 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V --1.8 --2.0 IT09897 No.8754-3/6 FW905 RDS(on) -- VGS [Nch] Ta=25°C 45 40 35 30 6A 25 ID=3A 15 10 5 Ta=25°C 2 4 8 10 IT05894 RDS(on) -- Ta [Nch] 40 35 30 25 =2.5V A, VGS I D=3 20 =4.0V 6A, V GS I D= 15 10 5 --50 --25 0 25 50 75 100 125 Ambient Temperature, Ta -- °C °C 25 5 = Ta 2 --2 °C °C 75 1.0 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A --1 --2 IS -- VSD --3 --4 --5 --6 --7 --8 IT09898 RDS(on) -- Ta [Pch] 80 70 60 V --2.5 S= VG , --3A I D= V = --4.0 , V GS A 6 -I D= 50 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT09900 yfs -- ID 3 [Pch] VDS= --10V 2 10 7 °C 25 5 3 2 = Ta 5 --2 °C 75 °C 1.0 7 5 3 2 0.1 --0.01 5 7 10 IT05896 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A [Nch] IS -- VSD --10 7 5 VGS=0V 5 7 --10 IT09901 [Pch] VGS=0V 3 3 2 25 °C --2 5°C Ta = 75 °C 1.0 7 5 Source Current, IS -- A 3 2 0.1 7 5 3 2 0.01 0.4 10 2 --1.0 7 5 3 2 --0.1 7 5 --25° C 10 7 5 20 25°C 2 30 5 °C 0.1 0.01 40 Ambient Temperature, Ta -- °C [Nch] 10 3 ID= --3A IT09899 yfs -- ID 5 50 0 --60 175 VDS=10V 7 --6A 60 90 Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S 2 150 70 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 45 0 --75 Source Current, IS -- A 12 Gate-to-Source Voltage, VGS -- V 50 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 6 80 0 --0 0 0 [Pch] 90 --0.5 --0.6 --0.7 Ta= 7 20 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 3 2 0.5 0.6 0.7 0.8 Diode Forward Voltage, VSD -- V 0.9 1.0 IT05897 --0.01 --0.3 --0.4 --0.8 --0.9 Diode Forward Voltage, VSD -- V --1.0 --1.1 IT09902 No.8754-4/6 FW905 SW Time -- ID 1000 [Nch] VDD=10V VGS=4.5V 5 3 td(off) 2 tf 100 7 5 tr 3 td(on) 2 10 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 5 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 10 --0.01 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT09903 Drain Current, ID -- A IT05898 Ciss, Coss, Crss -- VDS 7 [Pch] VDD= --10V VGS= --4V 7 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 7 SW Time -- ID 1000 [Nch] f=1MHz Ciss, Coss, Crss -- VDS 5 [Pch] f=1MHz 5 3 2 Ciss 1000 7 5 3 1000 7 5 2 Crss 100 100 0 2 4 6 10 12 14 16 18 20 IT05899 VGS -- Qg [Nch] VDS=10V ID=7A 3.5 0 --4.0 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 8 Drain-to-Source Voltage, VDS -- V 4.0 3.0 2.5 2.0 1.5 1.0 0.5 0 15 --10 --15 --20 IT09904 VGS -- Qg [Pch] VDS= --10V ID= --6A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 20 Total Gate Charge, Qg -- nC IT09905 ASO [Nch] ≤10µs 0 --100 7 5 3 2 1m s 10 ID=7A ms 0m s Drain Current, ID -- A Drain Current, ID -- A 10 IDP=52A 10 DC 10 op s era 1.0 7 5 3 2 0.1 7 5 3 2 --5 Drain-to-Source Voltage, VDS -- V 0 5 0 10 7 5 3 2 Coss Crss 3 Coss 2 100 7 5 3 2 Ciss 2 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 3 Operation in this area is limited by RDS(on). tio n( Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT09907 --10 7 5 3 2 2 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC IT09906 ASO [Pch] ≤10µs IDP= --52A 1m s 10 ID= --6A ms 0m s 10 DC 10 op s era --1.0 7 5 3 2 --0.1 7 5 3 2 4 tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (1500mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT09908 Drain-to-Source Voltage, VDS -- V No.8754-5/6 FW905 PD -- Ta Allowable Power Dissipation, PD -- W 2.0 M 1.7 1.6 ou nt ed on ac 1.2 er am ic bo 0.8 ar d (1 50 [Nch, Pch] 0m 0.4 m2 ✕ 0. 8m m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09909 Note on usage : Since the FW905 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. PS No.8754-6/6