VEC2612 Ordering number : ENA0656 SANYO Semiconductors DATA SHEET VEC2612 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • The best suited for inverter applications. The VEC2612 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting. 4V drive. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 30 --30 V Gate-to-Source Voltage VGSS ±20 ±20 V 3 --3 A 12 --12 Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation ID IDP PD Channel Temperature PT Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit 0.9 Mounted on a ceramic board (900mm2✕0.8mm) A W 1.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V 30 VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=1.5A 1.8 V 1 µA ±10 µA 2.6 V 3.0 S RDS(on)1 RDS(on)2 ID=1.5A, VGS=10V ID=1A, VGS=4V 73 95 mΩ 115 161 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 180 pF Output Capacitance Coss VDS=10V, f=1MHz 42 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF Static Drain-to-Source On-State Resistance Marking : CR Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12407PE TI IM TC-00000407 No. A0656-1/6 VEC2612 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 7 Rise Time tr td(off) See specified Test Circuit. 2.8 ns See specified Test Circuit. 18.5 ns tf Qg See specified Test Circuit. 4.4 ns VDS=10V, VGS=10V, ID=3A 4.9 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=10V, ID=3A VDS=10V, VGS=10V, ID=3A 0.93 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.85 Turn-OFF Delay Time Fall Time Total Gate Charge ns 0.93 nC 1.2 V --1 µA ±10 µA --2.4 V [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.0 yfs RDS(on)1 VDS=--10V, ID=--1.5A 2.0 Cutoff Voltage Forward Transfer Admittance --30 V 3.4 S 65 86 mΩ RDS(on)2 Ciss ID=--1.5A, VGS=--10V ID=--1A, VGS=--4V 117 168 mΩ VDS=--10V, f=1MHz 510 Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 17 ns See specified Test Circuit. 53 ns tf Qg See specified Test Circuit. 35 ns VDS=--10V, VGS=--10V, ID=--3A 11 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--3A VDS=--10V, VGS=--10V, ID=--3A 2.4 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--3A, VGS=0V Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge Package Dimensions pF 1.7 --0.87 nC --1.2 V Electrical Connection unit : mm (typ) 7012-002 8 7 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.15 6 5 2.3 2 3 4 0.65 2.9 1 0.75 1 0.07 0.25 2.8 0.25 8 0.3 2 3 4 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 No. A0656-2/6 VEC2612 Switching Time Test Circuit [N-channel] [P-channel] VDD=15V VIN VDD= --15V VIN 0V --10V 10V 0V ID=1.5A RL=10Ω VOUT VIN D PW=10µs D.C.≤1% ID= --1.5A RL=10Ω VOUT VIN D PW=10µs D.C.≤1% G G VEC2612 50Ω ID -- VDS 1.6 VGS=2.5V 1.2 0V V 10.0 2.0 [Pch] --4 . V V --6. 0 --3.0 --8. 0 --2.5 VGS= --2.5V V V 0 3. V 2.4 --5. 0 4.0 8.0V 2.8 ID -- VDS --3.5 Drain Current, ID -- A 3.2 S --4.0 6.0V 3.6 [Nch] VEC2612 50Ω V 5.0V 4.0 Drain Current, ID -- A P.G S --2.0 --10 P.G --1.5 --1.0 0.8 --0.5 0.4 0 0 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V ID -- VGS 25°C --25°C 1.5 1.0 1.5 2.0 2.5 --0.6 --0.7 --0.8 3.5 RDS(on) -- VGS --1.0 IT07767 ID -- VGS [Pch] --3 --2 4.0 4.5 0 --0.5 --1.0 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V IT02943 [Nch] 200 1.5A ID=1.0A 100 50 0 --3.0 IT07768 RDS(on) -- VGS 220 [Pch] Ta=25°C 150 --0.9 0 3.0 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --0.5 --1 Gate-to-Source Voltage, VGS -- V 250 --0.4 VDS= --10V 25 °C 0.5 --0.3 --5 0 0 --0.2 --4 2.0 0.5 --0.1 Drain-to-Source Voltage, VDS -- V VDS=10V 2.5 1.0 0 IT02942 Drain Current, ID -- A 75°C Ta= -2 3.0 Ta=7 5°C Drain Current, ID -- A 3.5 1.0 [Nch] 5°C 4.0 0.9 --25° C 0.4 25 °C 0.3 5°C 0.2 Ta= 7 0.1 0 200 180 160 ID= --1.5A 140 --1.0A 120 100 80 60 40 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 18 20 IT11979 0 --2 --4 --6 --8 --10 Gate-to-Source Voltage, VGS -- V --12 IT11980 No. A0656-3/6 VEC2612 RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ =4V , VGS A =10V A, V GS I D=1.5 50 --40 --20 0 20 40 60 80 100 120 IT11981 yfs -- ID [Nch] VDS=10V 5 3 C 25° C 5° 1.0 = Ta 7 C 75° --2 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 0.3 0.4 0.5 0.6 0.7 5 0.8 0.9 1.0 1.1 1.2 td(off) td(on) tf 5 tr 3 25 50 75 100 125 150 175 IT11982 yfs -- ID [Pch] Ta= °C --25 C 75° C 25° 1.0 7 5 2 3 5 7 2 --1.0 5 3 7 IT07771 IS -- VSD [Pch] VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.3 --0.4 2 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V [Nch] 3 7 0 Ambient Temperature, Ta -- °C 2 SW Time -- ID 2 100 10 --25 IT02947 SW Time -- ID 2 --50 3 --10 7 5 3 2 VDD=15V VGS=10V 1.0 0.1 40 Drain Current, ID -- A Switching Time, SW Time -- ns 7 60 --0.01 7 5 3 2 Diode Forward Voltage, VSD -- V 100 --10V S= , VG 1.5A I D= -- 80 3 --0.1 --25° C °C 25°C 0.01 0.2 100 5 Source Current, IS -- A 3 2 3 2 1. -I D= 120 [Nch] 1.0 7 5 --4V S= VDS= --10V 5 3 2 Ta=7 5 Source Current, IS -- A 3 VG 0A , 7 VGS=0V 0.1 7 5 140 IT02946 IS -- VSD 10 7 5 160 10 7 2 180 20 --75 160 Ambient Temperature, Ta -- °C 10 Switching Time, SW Time -- ns 140 200 5°C 25° C --25 °C 100 [Pch] Ta= 7 1.0 I D= 0 --60 Forward Transfer Admittance, yfs -- S 220 200 150 RDS(on) -- Ta [Nch] Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 --1.1 IT07772 [Pch] VDD= --15V VGS= --10V td(off) 7 5 tf 3 2 td(on) 10 tr 7 5 3 2 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT02948 1.0 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 IT07773 No. A0656-4/6 VEC2612 Ciss, Coss, Crss -- VDS 1000 7 1000 [Pch] f=1MHz 7 5 Ciss 5 3 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS [Nch] f=1MHz Ciss 2 100 7 5 Coss 3 3 2 Coss 100 Crss 7 5 Crss 2 3 2 10 0 5 10 20 25 IT02949 VGS -- Qg [Nch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 --15 --20 --25 --30 IT07774 VGS -- Qg [Pch] VDS= --10V ID= --3A --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 3 2 2 3 4 5 Total Gate Charge, Qg -- nC IT02950 ASO [Nch] IDP=12A 10 7 5 1m 10 10 s 0µ --10 7 5 s ms DC 1.0 7 5 10 0m s op era tio 3 2 3 2 ≤10µs ID=3A 3 2 n( Operation in this area is limited by RDS(on). Ta = 25 °C ) 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 3 2 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 3 5 2 4 3 2 6 8 10 12 14 Total Gate Charge, Qg -- nC IT07775 ASO [Pch] IDP= --12A ≤10µs 10 1m 0µs s ms ID= --3A 10 DC --1.0 7 5 10 0m s op era tio n( Ta = 25 Operation in this area is limited by RDS(on). °C ) --0.1 7 5 3 2 Drain-to-Source Voltage, VDS -- V IT11983 PD -- Ta [Nch / Pch] 1.2 0 6 Drain Current, ID -- A 0 Drain Current, ID -- A --10 Drain-to-Source Voltage, VDS -- V 1 Allowable Power Dissipation, PD -- W --5 --10 VDS=10V ID=3A 9 0 30 Drain-to-Source Voltage, VDS -- V 10 Gate-to-Source Voltage, VGS -- V 15 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT11984 Mounted on a ceramic board (900mm2✕0.8mm) 1.0 0.9 0.8 To t al 0.6 1u di nit 0.4 ss ip ati on 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11985 No. A0656-5/6 VEC2612 Note on usage : Since the VEC2612 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0656-6/6