SANYO VEC2612

VEC2612
Ordering number : ENA0656
SANYO Semiconductors
DATA SHEET
VEC2612
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
•
•
•
•
The best suited for inverter applications.
The VEC2612 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,
thereby enabling high-density mounting.
4V drive.
Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
±20
V
3
--3
A
12
--12
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
ID
IDP
PD
Channel Temperature
PT
Tch
Storage Temperature
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.9
Mounted on a ceramic board (900mm2✕0.8mm)
A
W
1.0
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
1.2
VDS=10V, ID=1.5A
1.8
V
1
µA
±10
µA
2.6
V
3.0
S
RDS(on)1
RDS(on)2
ID=1.5A, VGS=10V
ID=1A, VGS=4V
73
95
mΩ
115
161
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
180
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
42
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Static Drain-to-Source On-State Resistance
Marking : CR
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12407PE TI IM TC-00000407 No. A0656-1/6
VEC2612
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7
Rise Time
tr
td(off)
See specified Test Circuit.
2.8
ns
See specified Test Circuit.
18.5
ns
tf
Qg
See specified Test Circuit.
4.4
ns
VDS=10V, VGS=10V, ID=3A
4.9
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=10V, ID=3A
VDS=10V, VGS=10V, ID=3A
0.93
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=3A, VGS=0V
0.85
Turn-OFF Delay Time
Fall Time
Total Gate Charge
ns
0.93
nC
1.2
V
--1
µA
±10
µA
--2.4
V
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
--1.0
yfs
RDS(on)1
VDS=--10V, ID=--1.5A
2.0
Cutoff Voltage
Forward Transfer Admittance
--30
V
3.4
S
65
86
mΩ
RDS(on)2
Ciss
ID=--1.5A, VGS=--10V
ID=--1A, VGS=--4V
117
168
mΩ
VDS=--10V, f=1MHz
510
Output Capacitance
Coss
VDS=--10V, f=1MHz
115
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
78
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
11
ns
Rise Time
tr
td(off)
See specified Test Circuit.
17
ns
See specified Test Circuit.
53
ns
tf
Qg
See specified Test Circuit.
35
ns
VDS=--10V, VGS=--10V, ID=--3A
11
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=--10V, VGS=--10V, ID=--3A
VDS=--10V, VGS=--10V, ID=--3A
2.4
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=--3A, VGS=0V
Static Drain-to-Source On-State Resistance
Input Capacitance
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
pF
1.7
--0.87
nC
--1.2
V
Electrical Connection
unit : mm (typ)
7012-002
8
7
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.15
6 5
2.3
2
3
4
0.65
2.9
1
0.75
1
0.07
0.25
2.8
0.25
8
0.3
2
3
4
Top view
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
No. A0656-2/6
VEC2612
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
VDD= --15V
VIN
0V
--10V
10V
0V
ID=1.5A
RL=10Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
ID= --1.5A
RL=10Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
G
VEC2612
50Ω
ID -- VDS
1.6
VGS=2.5V
1.2
0V
V
10.0
2.0
[Pch]
--4
.
V
V
--6.
0
--3.0
--8.
0
--2.5
VGS= --2.5V
V
V
0
3.
V
2.4
--5.
0
4.0
8.0V
2.8
ID -- VDS
--3.5
Drain Current, ID -- A
3.2
S
--4.0
6.0V
3.6
[Nch]
VEC2612
50Ω
V
5.0V
4.0
Drain Current, ID -- A
P.G
S
--2.0
--10
P.G
--1.5
--1.0
0.8
--0.5
0.4
0
0
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
ID -- VGS
25°C
--25°C
1.5
1.0
1.5
2.0
2.5
--0.6
--0.7
--0.8
3.5
RDS(on) -- VGS
--1.0
IT07767
ID -- VGS
[Pch]
--3
--2
4.0
4.5
0
--0.5
--1.0
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
IT02943
[Nch]
200
1.5A
ID=1.0A
100
50
0
--3.0
IT07768
RDS(on) -- VGS
220
[Pch]
Ta=25°C
150
--0.9
0
3.0
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.5
--1
Gate-to-Source Voltage, VGS -- V
250
--0.4
VDS= --10V
25
°C
0.5
--0.3
--5
0
0
--0.2
--4
2.0
0.5
--0.1
Drain-to-Source Voltage, VDS -- V
VDS=10V
2.5
1.0
0
IT02942
Drain Current, ID -- A
75°C
Ta= -2
3.0
Ta=7
5°C
Drain Current, ID -- A
3.5
1.0
[Nch]
5°C
4.0
0.9
--25°
C
0.4
25
°C
0.3
5°C
0.2
Ta=
7
0.1
0
200
180
160
ID= --1.5A
140
--1.0A
120
100
80
60
40
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
18
20
IT11979
0
--2
--4
--6
--8
--10
Gate-to-Source Voltage, VGS -- V
--12
IT11980
No. A0656-3/6
VEC2612
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
=4V
, VGS
A
=10V
A, V GS
I D=1.5
50
--40
--20
0
20
40
60
80
100
120
IT11981
yfs -- ID
[Nch]
VDS=10V
5
3
C
25°
C
5°
1.0
=
Ta
7
C
75°
--2
5
3
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
0.3
0.4
0.5
0.6
0.7
5
0.8
0.9
1.0
1.1
1.2
td(off)
td(on)
tf
5
tr
3
25
50
75
100
125
150
175
IT11982
yfs -- ID
[Pch]
Ta=
°C
--25
C
75°
C
25°
1.0
7
5
2
3
5
7
2
--1.0
5
3
7
IT07771
IS -- VSD
[Pch]
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
--0.3
--0.4
2
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
[Nch]
3
7
0
Ambient Temperature, Ta -- °C
2
SW Time -- ID
2
100
10
--25
IT02947
SW Time -- ID
2
--50
3
--10
7
5
3
2
VDD=15V
VGS=10V
1.0
0.1
40
Drain Current, ID -- A
Switching Time, SW Time -- ns
7
60
--0.01
7
5
3
2
Diode Forward Voltage, VSD -- V
100
--10V
S=
, VG
1.5A
I D= --
80
3
--0.1
--25°
C
°C
25°C
0.01
0.2
100
5
Source Current, IS -- A
3
2
3
2
1.
-I D=
120
[Nch]
1.0
7
5
--4V
S=
VDS= --10V
5
3
2
Ta=7
5
Source Current, IS -- A
3
VG
0A ,
7
VGS=0V
0.1
7
5
140
IT02946
IS -- VSD
10
7
5
160
10
7
2
180
20
--75
160
Ambient Temperature, Ta -- °C
10
Switching Time, SW Time -- ns
140
200
5°C
25°
C
--25
°C
100
[Pch]
Ta=
7
1.0
I D=
0
--60
Forward Transfer Admittance, yfs -- S
220
200
150
RDS(on) -- Ta
[Nch]
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
--1.1
IT07772
[Pch]
VDD= --15V
VGS= --10V
td(off)
7
5
tf
3
2
td(on)
10
tr
7
5
3
2
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT02948
1.0
--0.1
2
3
5
7
--1.0
2
Drain Current, ID -- A
3
5
7
IT07773
No. A0656-4/6
VEC2612
Ciss, Coss, Crss -- VDS
1000
7
1000
[Pch]
f=1MHz
7
5
Ciss
5
3
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
Ciss
2
100
7
5
Coss
3
3
2
Coss
100
Crss
7
5
Crss
2
3
2
10
0
5
10
20
25
IT02949
VGS -- Qg
[Nch]
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
--15
--20
--25
--30
IT07774
VGS -- Qg
[Pch]
VDS= --10V
ID= --3A
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
3
2
2
3
4
5
Total Gate Charge, Qg -- nC
IT02950
ASO
[Nch]
IDP=12A
10
7
5
1m
10
10
s
0µ
--10
7
5
s
ms
DC
1.0
7
5
10
0m
s
op
era
tio
3
2
3
2
≤10µs
ID=3A
3
2
n(
Operation in this
area is limited by RDS(on).
Ta
=
25
°C
)
0.1
7
5
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
3
2
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
2
3
5
2
4
3
2
6
8
10
12
14
Total Gate Charge, Qg -- nC
IT07775
ASO
[Pch]
IDP= --12A
≤10µs
10
1m 0µs
s
ms
ID= --3A
10
DC
--1.0
7
5
10
0m
s
op
era
tio
n(
Ta
=
25
Operation in this
area is limited by RDS(on).
°C
)
--0.1
7
5
3
2
Drain-to-Source Voltage, VDS -- V
IT11983
PD -- Ta
[Nch / Pch]
1.2
0
6
Drain Current, ID -- A
0
Drain Current, ID -- A
--10
Drain-to-Source Voltage, VDS -- V
1
Allowable Power Dissipation, PD -- W
--5
--10
VDS=10V
ID=3A
9
0
30
Drain-to-Source Voltage, VDS -- V
10
Gate-to-Source Voltage, VGS -- V
15
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT11984
Mounted on a ceramic board (900mm2✕0.8mm)
1.0
0.9
0.8
To
t
al
0.6
1u
di
nit
0.4
ss
ip
ati
on
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11985
No. A0656-5/6
VEC2612
Note on usage : Since the VEC2612 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
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or contained herein are controlled under any of applicable local export control laws and regulations, such
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0656-6/6