Ordering number : ENN7274 FW307 N-Channel and P-Channel Silicon MOSFETs FW307 Ultrahigh-Speed Switching Applications Preliminary Features • [FW307] 5 4 0.2 1.8max 1 6.0 4.4 0.3 • Package Dimensions The FW307 incorporates an N-channel MOSFET and a unit : mm P-channel MOSFET that feature low ON-resistance and 2129 high-speed switching, thereby enabling high-density mounting. 8 Excellent ON-resistance characteristic. 0.595 Specifications 1.27 0.43 0.1 1.5 5.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Ratings Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation Unit P-channel 250 --250 ±30 ±30 V 1 --0.7 A 5 Mounted on a ceramic board (900mm2✕0.8mm)1unit V --3 A 1.7 W 2.0 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS Zero-Gate Voltage Drain Current IDSS IDSS Gate-to-Source Leakage Current IGSS Gate-to-Source Leakage Current IGSS ID=1mA, VGS=0 VDS=250V, VGS=0 VDS=15V, VGS=0, Ta=0 to 60°C 250 V VGS=±25V, VDS=0 VGS=±15V, VDS=0, Ta=0 to 60°C 100 µA 4 µA ±10 µA ±1.2 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN GI IM No.7274-1/5 83002 TS IM TA-1265 FW307 Continued from preceding page. Parameter Symbol Cutoff Voltage VGS(off) Forward Transfer Admittance yfs RDS(on) Static Drain-to-Source On-State Resistance Ratings Conditions min VDS=10V, ID=1mA VDS=10V, ID=1A typ 1.5 1.4 Unit max 2.5 V 1.6 Ω 2.1 Input Capacitance Ciss 160 pF Output Capacitance Coss VDS=20V, f=1MHz 40 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 15 ns See specified Test Circuit. 80 ns tf See specified Test Circuit. 30 IS=1A, VGS=0 1.0 Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD 1.2 S ID=1A, VGS=10V VDS=20V, f=1MHz ns 1.2 V --100 µA --4 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Zero-Gate Voltage Drain Current IDSS IGSS IGSS Gate-to-Source Leakage Current Gate-to-Source Leakage Current Cutoff Voltage VGS(off) Forward Transfer Admittance yfs RDS(on) Static Drain-to-Source On-State Resistance ID=--1mA, VGS=0 VDS=--250V, VGS=0 --250 V VDS=15V, VGS=0, Ta=0 to 60°C VGS=±25V, VDS=0 ±10 µA VGS=±15V, VDS=0, Ta=0 to 60°C ±1.2 µA --2.5 V 4 Ω VDS=--10V, ID=--1mA VDS=--10V, ID=--0.7A --1.5 0.7 1.1 Input Capacitance Ciss 160 pF Output Capacitance Coss VDS=--20V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr td(off) See specified Test Circuit. 15 ns See specified Test Circuit. 90 ns tf See specified Test Circuit. 40 Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD 3 S ID=--0.7A, VGS=--10V VDS=--20V, f=1MHz IS=--1A, VGS=0 Switching Time Test Circuit [N-channel] --1.0 V [P-channel] VDD=100V VIN ns --1.2 VDD= --100V VIN 10V 0V 0V --10V ID=1A RL=100Ω VIN D ID= --0.7A RL=142Ω VIN D VOUT PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% G G FW307 P.G 50Ω FW307 P.G S 50Ω S Electrical Connection 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 (Top view) 1 2 3 4 No.7274-2/5 FW307 1.0 0.8 0.6 VGS=3V V --1.2 --1.0 --0.8 --0.6 0.4 --0.4 0.2 --0.2 2.0 2.5 3.0 3.5 4.0 4.5 --2 --3 --4 --6 --7 --2.0 1.6 --1.6 C 25° --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS -- V --0.5 [Nch] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 IT04462 RDS(on) -- VGS 8 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C ID=1A --1.0 Gate-to-Source Voltage, VGS -- V IT04461 RDS(on) -- VGS 4.0 0 4.0 Ta --2 5°C =75°C 0.4 --10 IT04460 --1.4 25 °C Ta= 7 0.6 --25 ° 0.8 C 5°C 25 °C 1.0 Ta= --25° C --1.8 Drain Current, ID -- A 1.8 1.2 --9 [Pch] VDS= --10V 1.4 --8 ID -- VGS [Nch] VDS=10V 0 --5 Drain-to-Source Voltage, VDS -- V IT04459 ID -- VGS 2.0 --1 0 5.0 75° C 1.5 1.0 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A VGS= --3V 0 0.5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --4V --1 0 Drain Current, ID -- A 1.2 --1.4 0 [Pch] Ta=25°C ID= --0.7A 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V 20 2.5 2.0 1.5 1.0 0.5 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C --2 120 140 IT04465 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V [Nch] ID=1A VGS=10V 0 --60 0 IT04463 RDS(on) -- Ta 3.0 18 --18 --20 IT04464 RDS(on) -- Ta 8 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω [Pch] --1.6 10 1.4 --6 V 4V --1.8 V 1.6 ID -- VDS --2.0 5V 6V 1.8 Drain Current, ID -- A [Nch] --5 V ID -- VDS 2.0 [Pch] ID= --0.7A VGS= --10V 7 6 5 4 3 2 1 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 IT04466 No.7274-3/5 FW307 3 2 25 1.0 °C C 5° --2 = Ta °C 75 7 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 7 IF -- VSD 3 5 3 2 0.1 --0.1 2 3 5 7 2 --1.0 Drain Current, ID -- A 3 2 3 IT04468 IF -- VSD [Pch] VGS = 0 3 --0.1 7 5 3 3 2 2 0.5 0.6 0.7 0.8 0.9 [Nch] Switching Time, SW Time -- ns 7 5 tf 3 2 tr 10 td(on) 7 --1.0 --1.2 IT04470 SW Time -- ID [Pch] VDD= --100V VGS= --10V 2 td(off) 100 --0.8 3 VDD=100V VGS=10V 2 --0.6 Diode Forward Voltage, VSD -- V IT04469 SW Time -- ID 3 --0.01 --0.4 1.0 C 2 --25 ° 5 5 25°C 7 7 5°C 0.1 Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 7 Forward Current, IF -- A C --25 ° 2 25° 3 C 5 0.01 0.4 td(off) 100 7 tf 5 3 2 td(on) 10 7 tr 5 3 2 5 3 0.1 2 3 5 7 2 1.0 Drain Current, ID -- A Ciss, Coss, Crss -- VDS 1000 1.0 --0.1 3 [Nch] f=1MHz 7 5 3 3 100 7 Coss 5 Crs 3 2 2 7 --1.0 IT04472 [Pch] f=1MHz Ciss 100 7 Coss 5 Crss 3 s 5 Ciss, Coss, Crss -- VDS 1000 5 Ciss 3 Drain Current, ID -- A 7 2 2 IT04471 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF °C --25 Ta= 75°C 1.0 --1.0 Ta =7 5°C Forward Current, IF -- A 1.0 7 25°C 2 [Nch] VGS=0 2 [Pch] VDS= --10V 2 1.0 IT04467 Drain Current, ID -- A yfs -- ID 3 Ta= 7 Forward Transfer Admittance, yfs -- S [Nch] VDS=10V Forward Transfer Admittance, yfs -- S yfs -- ID 5 2 10 10 0 5 10 15 20 Drain-to-Source Voltage, VDS -- V 25 30 IT04473 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT04474 No.7274-4/5 FW307 ASO ID=1A 10 ms 10 DC 0m s op era 0.1 7 5 3 2 tio n Operation in this area is limited by RDS(on). 0.01 7 5 3 2 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 Drain-to-Source Voltage, VDS -- V IT04475 PD -- Ta [Nch, Pch] 2.5 Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 1.7 To ta 1.5 lD iss ipa 1u tio n nit 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04477 [Pch] ≤10µs 10 0 1m µs 10 s ms IDP= --3A ID= --0.7A --1.0 7 5 3 2 DC 10 0m s op era --0.1 7 5 3 2 tio n Operation in this area is limited by RDS(on). --0.01 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm)1unit 2 3 ASO --10 7 5 3 2 Drain Current, ID -- A 1.0 7 5 3 2 0.001 0.1 Allowable Power Dissipation, PD -- W [Nch] ≤10µs 10 0µ s 1m s IDP=5A Ta=25°C Single pulse Mounted on a ceramic board (1200mm2✕0.8mm)1unit --0.001 --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation (FET1), PD -- W Drain Current, ID -- A 10 7 5 3 2 2 3 5 IT04476 PD(FET1) -- PD(FET2) [Nch, Pch] Mounted on a ceramic board (1200mm2✕0.8mm) 2.0 1.8 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Power Dissipation (FET2), PD -- W 1.8 2.0 IT04478 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2002. Specifications and information herein are subject to change without notice. PS No.7274-5/5