STMICROELECTRONICS BUT30

BUT30V
NPN TRANSISTOR POWER MODULE
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■
■
■
■
■
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NPN TRANSISTOR
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
■
MOTOR CONTROL
■
SMPS & UPS
■
WELDING EQUIPMENT
Pin 4 not con nected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V CEV
Parameter
Collector-Emitter Voltage (V BE = -5 V)
IC
I CM
Uni t
200
V
125
V
7
V
Collector Current
100
A
Collector Peak Current (tp = 10 ms)
150
A
V CEO(sus) Collector-Emitter Voltage (I B = 0)
V EBO
Value
Emitter-Base Voltage (I C = 0)
Base Current
20
A
I BM
Base Peak Current (t p = 10 ms)
30
A
P t ot
Total Dissipation at T c = 25 o C
250
IB
T stg
Tj
V ISO
July 1997
W
-55 to 150
o
Max. Operating Junction Temperature
150
o
Insulation W ithstand Voltage (AC-RMS)
2500
St orage Temperature
C
C
V
1/7
BUT30V
THERMAL DATA
R t hj-ca se
R thc -h
Thermal Resistance Junction-case
Thermal Resistance Case-heats ink With Conductive
Grease Applied
Max
0.5
o
C/W
Max
0.05
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CER
I CEV
I EBO
Parameter
hFE∗
V BE(s at)∗
Max.
Un it
o
1
5
mA
mA
o
1
4
mA
mA
1
mA
Collector Cut-off
Current (R BE = 5 Ω)
V CE = V CEV
V CE = V CEV
T j = 100 C
Collector Cut-off
Current (V BE = -5V)
V CE = V CEV
V CE = V CEV
T j = 100 C
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(SUS) * Collector-Emitter
Sustaining Voltage
V CE(sat )∗
Test Cond ition s
DC Current G ain
I C = 100 A
V CE = 5 V
IC
IC
IC
IC
=
=
=
=
50 A
50 A
100 A
100 A
IB
IB
IB
IB
=
=
=
=
2.5 A
2.5 A
10 A
10 A
IC
IC
IC
IC
=
=
=
=
50 A
50 A
100 A
100 A
IB
IB
IB
IB
=
=
=
=
2.5 A
2.5 A
10 A
10 A
Typ .
125
I C = 0.2 A
L = 25 mH
V c la mp = 125 V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Min.
V
27
o
T j = 100 C
o
T j = 100 C
o
T j = 100 C
o
T j = 100 C
0.45
0.55
0.7
0.9
0.9
1.2
0.9
1.5
V
V
V
V
1.15
1.1
1.45
1.55
1.4
1.4
1.8
1.9
V
V
V
V
V CC = 300 V
I B1 = 15 A
RC = 0
tp = 3 µs
o
Tj = 100 C
V CE (3 µs)•• Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 15 A
RC = 1 Ω
T j = 100 o C
2.7
3.5
V
V CE (5 µs)•• Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 15 A
RC = 1 Ω
o
T j = 100 C
2
2.5
V
1
0.1
0.2
2
0.2
0.35
µs
µs
µs
di C /dt
ts
tf
tc
V CEW
Rate of Rise of
On-state Collector
Storage Time
Fall T ime
Cross-over T ime
I C = 100 A
V CC = 90 V
V BB = -5 V
R BB = 0.47 Ω
V c la mp = 125 V I B1 = 10 A
L = 45 µH
T j = 100 o C
Maximum Collector
Emitter Voltage
Without Snubber
I CW off = 150 A
V BB = -5 V
L = 30 µH
T j = 125 o C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
IB1 = 10 A
V CC = 90 V
R BB = 0.5 Ω
270
125
350
A/µs
V
BUT30V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUT30V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUT30V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
(1) Fast electronic switch
(3) Fast recovery rectifier
Turn-off Switching Waveforms
(2) Non-inductive load
5/7
BUT30V
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
0.157
8.2
0.307
0.322
A
G
B
O
H
J
C
K
L
M
6/7
F
E
D
N
BUT30V
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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