BU931/BU931P BU931PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON PRELIMINARY DATA ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES 1 APPLICATIONS ■ HIGH RUGGEDNESS ELECTRONIC IGNITIONS 2 TO-3 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: pin 2 Base: pin 1 Collector: tab ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BU931 BU931P Unit BU931PFI VC ES Collector-Emitter Voltage (V BE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (IC = 0) 5 V IC I CM Collector Current 15 A Collector Peak Current 30 A A IB Base Current 1 IB M Base Peak Current 5 P tot Total Dissipation at Tc = 25 o C T stg Storage Temperature Tj Max. Operating Junction Temperature Dicember 1993 A 175 135 60 -65 to 200 -65 to 175 -65 to 175 o C 175 o C 200 175 W 1/8 BU931/BU931P/BU931PFI THERMAL DATA R thj-cas e Thermal Resistance Junction-case TO-3 TO-218 ISOWATT218 1 1.1 2.5 Max o C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CE S Collector Cut-off Current (V BE = 0) V CE = 500 V V CE = 500 V T j = 125 o C 100 0.5 µA mA I CEO Collector Cut-off Current (I B = 0) V CE = 450 V V CE = 450 V T j = 125 o C 100 0.5 µA mA IE BO Emitter Cut-off Current (I C = 0) V EB = 5 V 20 mA V CE O(sus)∗ Collector-Emitter Sustaining Voltage I C = 100 mA L = 10 mH IB = 0 V CLAMP = RATED V CEO (See FIG.4) 400 V V CE (sat)∗ Collector-Emitter Saturation Voltage IC = 7 A IC = 8 A I C = 10 A IB = 70 mA IB = 100 mA I B = 250 mA 1.6 1.8 1.8 V V V VB E(sat)∗ Base-Emitter Saturation Voltage IC = 7 A IC = 8 A I C = 10 A IB = 70 mA IB = 100 mA I B = 250 mA 2.2 2.4 2.5 V V V DC Current Gain IC = 5 A 2.5 V h FE ∗ VF ts tf V CE = 10 V Diode Forward Voltage I F = 10 A Functional Test (see fig. 1) V CC = 24 V V clamp = 400 V L= 7 mH INDUCTIVE LOAD Storage Time Fall Time (see fig. 3) V CC = 12 V V clamp = 300 V L= 7 mH I C = 7 A IB = 70 mA V BE = 0 R BE = 47 Ω ∗ Pulsed: Pulse durati on = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/8 DC Current Gain 300 8 A 15 0.5 µs µs BU931/BU931P/BU931PFI Collector-emitter Sturation Voltage Collector-emitter Sturation Voltage Collector-emitter Sturation Voltage Base-emitter Sturation Voltage Base-emitter Sturation Voltage Switching Times Inductive Load 3/8 BU931/BU931P/BU931PFI FIGURE 1: Functional Test Circuit FIGURE 2: Functional Test Waveforms FIGURE 3: Switching Time Test Circuit FIGURE 4: Sustaining Voltage Test Circuit 4/8 BU931/BU931P/BU931PFI TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 5/8 BU931/BU931P/BU931PFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F Ø R 6/8 1 2 3 P025A BU931/BU931P/BU931PFI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.45 1 0.017 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 7/8 BU931/BU931P/BU931PFI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8