STMICROELECTRONICS BUF420A

BUF420A

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
■
■
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
MOTOR CONTROL
DESCRIPTION
The BUF420A is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CEV
Collector-Emitter Voltage (V BE = -1.5V)
1000
V
V CEO
Collector-Emitter Voltage (I B = 0)
450
V
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
7
V
Collector Current
30
A
Collector Peak Current (tp < 5 ms)
60
A
Base Current
6
A
I BM
Base Peak Current (t p < 5 ms)
9
A
P t ot
Total Dissipation at T c = 25 C
IB
T stg
Tj
June 2000
o
St orage Temperature
Max. Operating Junction Temperature
200
W
-65 to 150
o
C
150
o
C
1/6
BUF420A
THERMAL DATA
R t hj-ca se
Thermal Resistance Junction-Case
Max
o
0.63
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CER
I CEV
I EBO
Parameter
V CE(sat )∗
V BE(s at)∗
di c /dt
V CE (3µs)
V CE (5µs)
V CE = 1000 V
V CE = 1000 V
Tc = 100 o C
Collector Cut-off
Current (V BE = -1.5V)
V CE = 1000 V
V CE = 1000 V
Tc = 100 C
Emitter Cut-off Current
(I C = 0)
V BE = 5 V
I C = 200 mA
L = 25 mH
Emitter Base Voltage
(I C = 0)
I E = 50 mA
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
=
=
=
=
10A
10 A
20 A
20 A
IB
IB
IB
IB
=
=
=
=
1
1
2
2
A
A
A
A
IC
IC
IC
IC
=
=
=
=
10A
10 A
20 A
20 A
IB
IB
IB
IB
=
=
=
=
1
1
2
2
A
A
A
A
Base-Emitter
Saturation Voltage
Rate of rise on-state
Collector Current
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
Max.
Un it
0.2
1
mA
mA
0.2
1
mA
mA
1
mA
450
V
7
V
0.8
Tc =100 o C
2.8
0.5
T c =100 o C
2
0.9
o
1.5
Tc =100 C
1.1
o
T c =100 C
V CC = 300 V R C = 0 t p = 3 µs
o
T j =25 C
I B1 = 1.5 A
T j =100 o C
I B1 = 1.5 A
o
Tj =100 C
I B1 = 6 A
1.5
100
R C = 60 Ω
T j =25 o C
o
T j =100 C
2.1
V CC = 300 V
I B1 = 1.5 A
I B1 = 1.5 A
R C = 60 Ω
o
T j =25 C
o
T j =100 C
1.1
I C = 10 A
V BB = - 5 V
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.6 Ω
IB1 = 0.5 A
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
I C = 10 A
V BB = - 5 V
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.6 Ω
IB1 = 1 A
o
Tj =100 C
Maximum Collector
Emitter Voltage
without Snubber
I C = 10 A
V BB = - 5 V
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.6 Ω
IB1 = 1 A
Tj =125 o C
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
I C = 10 A
V BB = 0
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.15 Ω
IB1 = 1 A
V
V
V
V
8
V
V
4
V
V
µs
µs
µs
1
0.05
0.08
2
0.1
0.18
500
V
V
V
V
A/µs
A/µs
A/µs
70
150
V CC = 300 V
I B1 = 1.5 A
I B1 = 1.5 A
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
ts
tf
tc
Typ .
o
ts
tf
tc
V CEW
2/6
Min.
Collector Cut-off
Current (R BE = 5 Ω)
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
V EBO
Test Cond ition s
µs
µs
µs
V
1.5
0.04
0.07
µs
µs
µs
BUF420A
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
Parameter
Test Cond ition s
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
I C = 10 A
V BB = 0
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.15 Ω
IB1 = 1 A
o
Tj =100 C
Maximum Collector
Emitter Voltage
without Snubber
I C = 10 A
V BB = 0
V c la mp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.15 Ω
IB1 = 1 A
Tj =125 o C
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
I C = 20 A
V BB = -5 V
V c la mp = 400 V
L = 0.12 mH
V CC = 50 V
R BB =0.6 Ω
IB1 = 4 A
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall T ime
Cross Over T ime
I C = 20 A
V BB = - 5 V
V c la mp = 400 V
L = 0.12 mH
V CC = 50 V
R BB = 0.6 Ω
IB1 = 4 A
Tj =125 o C
Maximum Collector
Emitter Voltage
without Snubber
I CW off = 30 A
V BB = - 5 V
L = 0.08 mH
o
T j =125 C
V CC = 50 V
R BB = 0.6 Ω
IB1 = 6 A
ts
tf
tc
V CEW
V CEW
Min.
Typ .
Max.
Un it
3
0.15
0.25
µs
µs
µs
500
V
µs
µs
µs
2.2
0.06
0.12
3.5
0.12
0.3
400
µs
µs
µs
V
Turn-on Switching Test Circuit.
1) F ast electronic switch
2) Non-inductive Resistor
Turn-off Switching Test Circuit.
1) F ast electronic switch
2) Non-inductive Resistor
3) F ast recovery rectifier
3/6
BUF420A
Turn-on Switching Test Waveforms.
Turn-off Switching Test Waveforms
(inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
4/6
BUF420A
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
1
2
3
P025A
5/6
BUF420A
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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