STMICROELECTRONICS STD1805-1

STD1805
®
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
■
■
■
■
■
Ordering Code
Marking
Shipment
STD1805T4
D1805
Tape & Reel
STD1805-1
D1805
Tube
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
HIGH CURRENT GAIN CHARACTERISTIC
FAST-SWITCHING SPEED
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (Suffix "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(Suffix "T4")
APPLICATIONS:
CCFL DRIVERS
■ VOLTAGE REGULATORS
■ RELAY DRIVERS
■ HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
3
3
2
1
1
IPAK
TO-251
(Suffix "-1")
DPAK
TO-252
(Suffix "T4")
■
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CBO
Collector-Base Voltage (I E = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
P tot
Total Dissipation at T c = 25 o C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
November 2003
Value
Unit
150
V
60
V
7
V
5
A
10
A
2
A
15
W
-65 to 150
o
C
150
o
C
1/8
STD1805
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
8.33
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 40 V
0.1
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 4 V
0.1
µA
Collector-Base
Breakdown Voltage
(I E = 0)
I C = 100 µA
V (BR)CBO
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 1 mA
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
Base-Emitter
Saturation Voltage
V BE(sat) ∗
h FE ∗
fT
C CBO
t ON
ts
tf
150
V
60
V
7
V
I B = 5 mA
I B = 50 mA
I B = 150 mA
I B = 200 mA
150
200
50
300
400
600
mV
mV
mV
mV
IC = 2 A
I B = 100 mA
0.9
1.2
V
DC Current Gain
I C = 100 mA
IC = 5 A
I C = 10 A
V CE = 2 V
V CE = 2 V
V CE = 2 V
Transition frequency
V CE = 10 V
I C = 50 mA
150
MHz
Collector-Base
Capacitance
V CB = 10 V
f = 1 MHz
50
pF
IC = 1 A
I B1 = - I B2 = 0.1 A
V CC = 30 V
50
1.35
120
ns
µs
ns
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
=
=
=
=
* Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/8
Min.
100 mA
2A
3A
5A
200
85
20
400
STD1805
Derating Curve
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
3/8
STD1805
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Inductive Load
Switching Times Inductive Load
4/8
STD1805
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/8
STD1805
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
B6
C
0.033
0.30
0.012
0.95
0.45
0.60
0.037
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
V1
0.80
10
o
1.00
0.047
0.031
10
0.039
o
P032N_E
6/8
STD1805
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
7/8
STD1805
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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