NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • • • • • • http://onsemi.com (3) hFE, 200−450 Low VCE(sat), ≤ 0.3 V Simplifies Circuit Design Reduces Board Space Reduces Component Count This is a Pb−Free Device (2) Q1 Q2 (4) (5) Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 50 Vdc Emitter−Base Voltage VEBO 6.0 Vdc mAdc Collector Current − Continuous IC 100 ESD Class 2 B Symbol Max Unit PD 240 1.9 mW mW/°C RqJA 520 °C/W PD 280 2.2 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 446 °C/W Characteristic (Dual Heated) (Note 3) Symbol Max Unit PD 350 2.8 mW mW/°C RqJA 357 °C/W PD 420 3.4 mW mW/°C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 297 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C HBM MM *Q1 PNP Q2 NPN 6 Characteristic (Single Heated) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) Total Device Dissipation TA = 25°C Derate above 25°C (Note 1) Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C (Note 2) 4 2 3 SOT−963 CASE 527AD PLASTIC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels © Semiconductor Components Industries, LLC, 2008 5 1 THERMAL CHARACTERISTICS May, 2008 − Rev. 0 (6) NST847BPDP6T5G* MAXIMUM RATINGS Electrostatic Discharge (1) 1 MARKING DIAGRAM 1 A M G AMG G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NST847BPDP6T5G SOT−963 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST847BPDP6/D NST847BPDP6T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 −45 − − − − 50 −50 − − − − 50 −50 − − − − 6.0 −5.0 − − − − − − − − − − − − 15 5.0 −15 −4.0 200 290 450 220 290 475 − − − − 0.25 0.60 − − − − −0.30 −0.70 − − 0.70 0.90 − − − − −0.70 −0.90 − − 0.58 − 0.66 − 0.70 0.77 −0.60 − − − −0.75 −0.82 100 − − 100 − − − − 4.5 − − 4.5 (NPN) − − 10 (PNP) − − 10 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) (IC = −1.0 mA, IB = 0) (NPN) (PNP) Collector −Base Breakdown Voltage (IC = 10 mA, IE = 0) (IC = −10 mA, IE = 0) (NPN) (PNP) Collector −Emitter Breakdown Voltage (IC = 10 mA) (IC = −10 mA) (NPN) (PNP) Emitter−Base Breakdown Voltage (IE = 1.0 mA, IC = 0) (IE = −1.0 mA, IC = 0) (NPN) (PNP) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) (VCB = −30 V) (VCB = −30 V, TA = 150°C) (NPN) (NPN) (PNP) (PNP) V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO V V V V nA mA nA mA ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 2.0 mA, VCE = 5.0 V) (NPN) (IC = −2.0 mA, VCE = −5.0 V) hFE (PNP) Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (NPN) (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) (PNP) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (NPN) (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) (PNP) Base −Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) (NPN) (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) (PNP) − V V V SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) (NPN) (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) fT (PNP) Output Capacitance (VCB = 10 V, f = 1.0 MHz) (NPN) (VCB = −10 V, f = 1.0 MHz) Cob (PNP) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1 kHz, BW = 200 Hz) MHz pF NF (IC = −0.2 mA, VCE = −5.0 V, RS = 2 kW, f = 1 kHz, BW = 200 Hz) 4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%. http://onsemi.com 2 dB NST847BPDP6T5G NPN TRANSISTOR 0.16 600 150°C (5.0 V) IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 0.14 0.12 VCE(sat) = 150°C 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 500 150°C (1.0 V) 400 25°C (5.0 V) 300 25°C (1.0 V) 200 −55°C (5.0 V) 100 −55°C (1.0 V) −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 0 0.0001 0.01 0.001 IC, COLLECTOR CURRENT (A) 0.1 Figure 2. DC Current Gain vs. Collector Current http://onsemi.com 3 NST847BPDP6T5G NPN TRANSISTOR 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 1.0 7.0 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 0.4 30 mA 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 6.5 6.0 5.5 5.0 Cib 4.5 4.0 3.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 2.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V 0.9 IC, COLLECTOR CURRENT (A) Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 2.3 2.1 1.9 1.7 1.5 1.3 1.1 Cob 0.9 0.7 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance http://onsemi.com 4 30 4.5 5.0 NST847BPDP6T5G PNP TRANSISTOR 0.16 800 IC/IB = 10 0.14 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.18 VCE(sat) = 150°C 0.12 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 8. Collector Emitter Saturation Voltage vs. Collector Current 700 600 150°C (5.0 V) 150°C (1.0 V) 500 25°C (5.0 V) 400 300 200 100 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 0 0.0001 0.01 0.001 IC, COLLECTOR CURRENT (A) 0.1 Figure 9. DC Current Gain vs. Collector Current http://onsemi.com 5 NST847BPDP6T5G PNP TRANSISTOR 1.0 0.8 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) 0.9 IC/IB = 10 −55°C 0.7 0.6 25°C 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 VCE = 2.0 V 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Turn−On Voltage vs. Collector Current 1.0 10 IC = 100 mA 0.9 0.8 0.7 50 mA 0.6 0.5 30 mA 0.4 0.3 0.2 0.1 0 0.00001 10 mA 0.0001 0.001 0.01 9 8 7 6 Cib 5 4 3 0 1.0 2.0 3.0 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 12. Saturation Region Figure 13. Input Capacitance 4.5 Cobo, OUTPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.1 Cibo, INPUT CAPACITANCE (pF) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 1.0 4.0 3.5 3.0 2.5 2.0 1.5 Cob 1.0 0.5 0 5 10 15 20 25 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 14. Output Capacitance http://onsemi.com 6 30 5.0 NST847BPDP6T5G PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE C D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.08 0.20 0.08 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NST847BPDP6/D