STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 40V 80A 4.8 @ VGS=10V Rugged and reliable. TO-220 and TO-263 Package. D D G G D S S STB SERIES TO-263(DD-PAK) G STP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a TC=25°C b d EAS Sigle Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25°C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit 40 ±20 Units V V 80 A 264 A 306 mJ 62 W -55 to 150 °C 1.8 62.5 °C/W °C/W Mar,26,2008 1 www.samhop.com.tw STB/P8444 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 40 Typ VGS= ±20V , VDS=0V 2 Units 1 ±100 uA V VDS=32V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=80A VDS=5V , ID=80A Max 2.8 3.5 4 nA 20 V m ohm S 6500 940 500 pF pF pF 185 ns 162 ns 185 ns 50 ns 110 nC 20 nC 26 nC 4.8 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time VDS=20V,VGS=0V f=1.0MHz c VDD=20V ID=1A VGS=10V RGEN=6 ohm Qg Total Gate Charge VDS=20V,ID=25A,VGS=10V Qgs Qgd Gate-Source Charge VDS=20V,ID=25A, VGS=10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD VGS=0V,IS=10A Diode Forward Voltage 0.8 1.3 V Notes a.Maximum wire current carrying capacity is 80A. _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,RG=25Ω,IAS=35A,VDD = 20V.(See Figure13) Mar,26,2008 2 www.samhop.com.tw STB/P8444 120 20 96 16 I D, Drain Current(A) I D, Drain Current(A) Ver 1.0 V G S =10V 72 V G S =6V V G S =5V 48 24 0 12 25 C 8 Tj=125 C 0 0 0.5 1 2 1.5 3 2.5 0 7 2.0 6 1.8 5 4 V G S =10V 6 V G S =10V I D = 80 A 1.6 1.4 1.2 1 24 48 72 96 0.0 120 0 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 50 Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 5 1.0 2 0.5 4 3 Figure 2. Transfer Characteristics RDS(ON), On-Resistance Normalized RDS(on) (m W) Figure 1. Output Characteristics 1 2 1 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 3 -55 C 4 100 125 150 Tj, Junction Temperature ( C) 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Mar,26,2008 3 www.samhop.com.tw STB/P8444 Ver 1.0 12 20.0 I D =80 A Is, Source-drain current (A) RDS(on) (m W) 10 8 125 C 6 4 25 C 75 C 2 0 0 2 4 6 8 125 125 C 25 C 75 C 1.0 10 0.0 0.2 0.4 0.6 0.8 1.0 V GS, Gate-Sorce Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 7500 VGS, Gate to Source Voltage (V) 9000 C, Capacitance (pF) 10.0 Cis s 6000 4500 3000 Cos s 1500 C rs s 0 0 V DS = 20V I D = 25A 8 6 4 2 0 5 10 20 15 25 30 0 20 40 60 80 100 120 140 160 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 2200 1000 1000 600 TD(off) 100 ID, Drain Current (A) Switching Time (ns) Tr TD(on) Tf V DS =20V ,ID=1A 10 100 R 6 10 60 100 Rg, Gate Resistance(Ω) it 10 1m 0u s s 10 1 0.1 300 600 ( L im 10 m DC s V G S =10V 1 DS ) ON V G S =10V S ingle P ulse T c=25 C 1 10 100 VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Mar,26,2008 4 www.samhop.com.tw STB/P8444 Ver 1.0 V (B R ) DS S 15V DR IV E R L V DS tp D.U.T RG + V DD - I AS 20V 0.01 tp I AS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13a. Figure 13b. r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) F igure 14. Normalized T hermal T rans ient Impedance C urve Mar,26,2008 5 www.samhop.com.tw STB/P8444 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-220 Mar,26,2008 6 www.samhop.com.tw STB/P8444 Ver 1.0 PACKAGE OUTLINE DIMENSIONS TO-263AB Mar,26,2008 7 www.samhop.com.tw STB/P8444 Ver 1.0 17.5 7.67 + 0.20 5.4 + 0.2 3.5 + 0.2 32 2.6 12.40 2.35 5.60 + 0.20 5.70 15.7 + 0.2 7.2 + 0.1 3.7 + 0.2 TO-220/263AB Tube 2.6 + 0.2 5.40 + 0. 0.5 + 0.1 536 + 1 2.50 4.30 5.80 5.10 ANTISTATIC 1.70 Mar,26,2008 8 www.samhop.com.tw