Ordering number : EISB0005 ISB-A27-0 Ultrathin Miniature Package 4-channel N-channel MOSFET Array Overview The ISB-A27-0 is a SANYO’S original SIP (System In Package) IC that includes four N-channel MOSFET devices. They are mounted into one thin-and-small package by utilizing SANYO’s high-density mounting technology, “Integrated System in Board (ISB)”. The advantage using its ultrathin miniature package makes the ISB-A27-0 ideal for switching devices in small, lowpower circuits for cell phones and other portable equipment. It achieves significant reduction in the component mounting area compared to discrete device implementations (approx 25% smaller than ECSP package). Features • Includes 4 identical N-channel MOSFET devices in a single package. • 1.6 mm×1.6 mm×0.75 mm ultrathin, miniature package. • 2.5V drive capability. Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Drain-to-source voltage VDSS Gate-to-source voltage VGSS ±10 V Drain current ID 0.15 A Common to TR1, TR2, TR3, and TR4 When mounted on a specified board * 30 V Allowable power dissipation Pd max 0.33 W Operating ambient temperature Topr -30 to +85 °C Storage ambient temperature Tstg -40 to +125 °C * Specified board: 40mm×25mm×0.8mm FR4 board • ISB is a registered trademark of SANYO Electric Co., Ltd. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. 92706 / 42806HKIM No.0005-1/4 ISB-A27-0 Electrical Characteristics Overall Operating Characteristics at Ta = 25°C, common to TR1, TR2, TR3, and TR4 Parameter Symbol Ratings Conditions min Drain-to-source breakdown voltage Unit typ max VDSS ID=1mA, VGS=0V 30 V Drain-to-source cutoff current IDSS VDS=30V, VGS=0V 10 µA Gate-to-source leakage current IGSS VGS=±8V, VDS=0V ±10 µA Gate-to-source cutoff current VGS(off) VDS=10V, ID=100µA 1.3 V Drain-to-source on resistance RDS(on)1 ID=80mA, VGS=4V 3.4 11 Ω RDS(on)2 ID=40mA, VGS=2.5V 4.2 14 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.7 20 Ω Package Dimensions unit : mm 0.75 1.6 1.6 MIN 0.5 0.15 0.5 1 2 3 4 5 6 7 8 9 0.23 0.3 0.8 0.5 0.5 0.3 0.3 0.5 0.1 0.15 0.8 0.30 Equivalent Circuit Drain c e TR2 TR3 TR4 Body Diode Gate Protection Diode TR1 k i g d Source (Common) Gate h f j No.0005-2/4 ISB-A27-0 ID - VDS 120 Drain Current, ID - mA Static Drain-to-Source On-State Resistance, RDS(on) - Ω 3 .0 4.0 V 140 100 VGS=1.5V 80 60 40 20 Ta=25°C 10 8 80mA 6 ID=40mA 4 2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS - V 0 1.0 2 4 6 8 10 Gate-to-Source Voltage, VGS - V ISB00020 ID - VGS ISB00021 RDS(on) - ID 10 75 °C 400 Ta = 25 °C 450 Static Drain-to-Source On-State Resistance, RDS(on) - Ω -25 °C 500 Drain Current, ID - mA RDS(on) - VGS 12 V 2.0 2.5 V Ta=25°C V 160 350 300 250 200 150 25 50 C 5° =7 a T °C -2 5° C 100 0 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS - V 5 Ta=75°C 3 25°C -25°C 2 1.0 0.01 3.0 2 3 5 7 2 0.1 3 5 Drain Current, ID - A ISB00022 RDS(on) - ID 10 7 7 1.0 ISB00023 RDS(on) - ID 100 VGS=2.5V VGS=1.5V 7 Static Drain-to-Source On-State Resistance, RDS(on) - Ω Static Drain-to-Source On-State Resistance, RDS(on) - Ω 7 Ta=75°C 5 25°C -25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID - A 10 7 5 3 2 1.0 0.2 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD - V 1.2 ISB00026 25°C 10 Ta=75°C 7 5 -25°C 3 2 2 3 5 7 0.01 2 3 5 7 0.1 ISB00025 RDS(on) - Ta 7 Static Drain-to-Source On-State Resistance, RDS(on) - Ω -25 Ta 3 2 °C =7 5°C 100 7 5 2 Drain Current, ID - A Ta=25°C 25° C Forward Current, IF - mA 1.0 ISB00024 3 2 3 1.0 0.001 7 IF - VSD 1000 7 5 5 6 8 5V =2. S G V A, V 40m =4.0 I D= , VGS A 80m I D= 4 3 2 1 0 -60 -40 -20 0 20 40 60 80 100 Ambient Temperature, Ta -°C 120 140 160 ISB00027 No.0005-3/4 ISB-A27-0 PD max - Ta 0.40 Power Dissipation, PD max - W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 -40 -20 0 20 40 60 Ambient Temperature,Ta -°C 80 100 ISB00028 <Manufactured by> ISB Business Unit, Electronic Device Company, Component & Device Group, SANYO Electric Co., Ltd. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.0005-4/4