BDW93CFP BDW94CFP ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED INSULATED PACKAGE 2000 V DC INSULATION (U.L. COMPLIANT) 3 1 APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 2 T0-220FP DESCRIPTION The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in TO-220FP fully molded insulated package. It is intented for use in power linear and switching applications. The complementary PNP type is the BDW94CFP. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN BDW93CFP PNP BDW94CFP Unit V CBO Collector-Base Voltage (I E = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V IC I CM IB Collector Current 12 A Collector Peak Current 15 A 0.2 A Base Current P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. Operating Junction Temperature 33 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. September 2001 1/4 BDW93CFP / BDW94CFP THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 3.8 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 5 µA mA I CBO Collector Cut-off Current (I E = 0) V CB = 100 V V CB = 100 V I CEO Collector Cut-off Current (I B = 0) V CE = 80 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) T case = 150 o C I C = 100 mA 100 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2 3 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2.5 4 V V DC Current Gain IC = 3 A IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V V CE = 3 V h FE ∗ VF * Parallel-diode Forward Voltage IF = 5 A I F = 10 A h fe Small Signal Current Gain IC = 1 A f = 1 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 1000 750 100 20000 1.3 1.8 V CE = 10 V 20 2 4 V V BDW93CFP / BDW94CFP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 3/4 BDW93CFP / BDW94CFP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4