BDW93CFP BDW94CFP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ■ ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) 3 APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 T0-220FP DESCRIPTION The BDW93CFP, is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in TO-220FP fully molded isolated package. It is intented for use in power linear and switching applications. The complementary PNP type is the BDW94CFP. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R 2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN BDW 93CFP PNP BDW 94CFP Uni t V CBO Collector-Base Voltage (IE = 0) 100 V V CEO Collector-Emitter Voltage (I B = 0) 100 V Collector Current 12 A Collector Peak Current 15 A Base Current 0.2 A IC I CM IB P t ot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. O perating Junction Temperature 33 W -65 to 150 o C 150 o C For PNP types voltage and current values are negative. April 1998 1/4 BDW93CFP / BDW94CFP THERMAL DATA R t hj-ca se Thermal Resistance Junction-case o 3.8 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Test Cond ition s Min. Typ . Max. Un it 100 5 µA mA Collector Cut-off Current (IE = 0) V CB = 100 V V CB = 100 V I CEO Collector Cut-off Current (IB = 0) V CE = 80 V 1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage (IB = 0) o Tcase = 150 C I C = 100 mA 100 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2 3 V V V BE(s at)∗ Base-Emitter Saturation Voltage IC = 5 A I C = 10 A I B = 20 mA I B = 100 mA 2.5 4 V V DC Current G ain IC = 3 A IC = 5 A I C = 10 A V CE = 3 V V CE = 3 V V CE = 3 V h FE∗ VF * Parallel-diode Forward Voltage IF = 5 A I F = 10 A hf e Small Signal Current Gain IC = 1 A f = 1 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area 2/4 1000 750 100 20000 1.3 1.8 V CE = 10 V 20 2 4 V V BDW93CFP / BDW94CFP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 3/4 BDW93CFP / BDW94CFP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 4/4