SGSF324 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The SGSF324 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The SGSF series is designed for high speed switching applications such as power supplies and horizontal deflection circuits in TVs and monitors. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Valu e Un it V CES Collector-Emitter Voltage (VBE = 0) 1200 V V CEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 4 A IC I CM IB I BM Parameter Collector Peak Current (tp < 5 ms) 8 A Base Current 3 A 6 A Base Peak Current (tp < 5 ms) o P tot T otal Dissipation at Tc = 25 C T s tg Storage Temperature Tj Max. Operating Junction T emperature September 1997 70 W -65 to 150 o C 150 o C 1/6 SGSF324 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 1200 V 200 µA I CEO Collector Cut-off Current (IB = 0) V EC = 380 V V EC = 600 V 200 µA mA I EBO Emitter Cut-off Current (I C = 0) V BE = 7 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage Test Cond ition s I C = 100 mA Min. Typ . 600 V V CE(sat )∗ Collector-Emitter Saturation Voltage I C = 1.75 A I C = 1.25 A IB = 0.35 A IB = 0.18 A 1.5 1.5 V V V BE(s at)∗ Base-Emitter Saturation Voltage I C = 1.75 A I C = 1.25 A IB = 0.35 A IB = 0.18 A 1.5 1.5 V V t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 1.75 A v CC = 250 v I B1 = - 0.7 A I B1 = 0.35 A 0.6 3 0.2 1 4.5 0.35 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD V CC = 250 v IC = 1.75 A I B1 = - 0.7 A I B1 = 0.35 A With Antisaturation Network 0.6 2 0.16 µs µs µs t ON ts tf Turn-on T ime Storage Time Fall T ime RESISTIVE LO AD IC = 1.75 A V CC = 250 V V BE (off) = - 5 V I B1 = 0.35 A 0.6 1 0.5 µs µs µs ts tf Storage Time Fall T ime INDUCTIVE LOAD hF E = 5 I C = 1.75 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 2 Ω 1.2 0.1 ts tf Storage Time Fall T ime INDUCTIVE LOAD hF E = 5 I C = 1.75 A V CL = 450 V V BE(off ) = -5 V L = 300 µH R BB = 2 Ω o T c = 100 C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/6 2.5 0.2 µs µs 3.7 0.3 µs µs SGSF324 Safe Operating AreaThermal Impedance Derating Curve DC Current Gain Collector Emitter Saturation Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/6 SGSF324 Resistive Load Switching Times Resistive Load Switching Times Switching Times Percentance Variation Reverse Biased SOA 4/6 SGSF324 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/6 SGSF324 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6