HITACHI 4AK19

4AK19
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-727 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A
R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-10
3
D
2G
1 S
5
D
4
G
7
D
6
G
12
34
56
78
9 10
9
D
8
G
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
4AK19
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
5
A
10
A
5
A
28
W
3.5
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Channel dissipation
Note1
Pch(Tc = 25°C)
Note2
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices poeration
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
120
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
100
µA
VDS = 100 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.3
0.5
Ω
I D = 2.5 A, VGS = 10 V Note3
Static drain to source on state
resistance
RDS(on)
—
0.35
0.6
Ω
I D = 2.5 A, VGS = 4 V Note3
Forward transfer admittance
|yfs|
3
5
—
S
I D = 2.5 A, VDS = 10 V Note3
Input capacitance
Ciss
—
25
—
pF
VDS = 10 V
Output capacitance
Coss
—
140
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
3
—
pF
f = 1 MHz
Gate series resistance
Rg
—
2.5
—
kΩ
VDS = 0, VGS = 0, f = 1 MHz
Turn-on delay time
t d(on)
—
0.3
—
µs
VGS = 10 V, ID = 2.5 A
Rise time
tr
—
0.45
—
µs
RL = 12 Ω
Turn-off delay time
t d(off)
—
6.6
—
µs
Fall time
tf
—
1.4
—
µs
Body–drain diode forward voltage
VDF
—
1.1
—
V
I F = 5 A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
600
—
ns
I F = 5 A, VGS = 0
diF/ dt = 50A/ µs
Note:
2
3. Pulse test
4AK19
Main Characteristics
Maximum Channel Dissipation Curve
Maximum Channel Dissipation Curve
46
4 Device Operation
4
3 Device Operation
2 Device Operation
1 Device Operation
2
50
100
150
Ambient Temperature
10
=
D
C
2
10
tio
0.5 Operation in
m
µs
µs
s
(1
sh
ra
n
0
m
s
O
pe
1
1
(T
4 Device Operation
28
ot
)
c
=
25
this area is
°C
)
0.2 limited by R DS(on)
3 Device Operation
2 Device Operation
1 Device Operation
14
0
50
100
150
Case Temperature
200
Tc (°C)
Typical Output Characteristics
5
I D (A)
PW
5
10
32
Ta (°C)
20
10
Condition : Channel dissipation of
each die is idetical
200
Maximum Safe Operation Area
50
I D (A)
Channel Dissipation
6
0
Drain Current
Pch (W)
Condition : Channel dissipation of
each die is idetical
Drain Current
Channel Dissipation
Pch (W)
8
10 V
4V
Pulse Test
4
3V
3
2
2.5 V
1
VGS = 2 V
0.1
Ta = 25 °C
0.05
1
3
10 30
100 300 1000
Drain to Source Voltage V DS (V)
0
4
8
12
Drain to Source Voltage
16
20
V DS (V)
3
4AK19
4
3
2
Tc = 75°C
1
Drain to Source On State Resistance
R DS(on) ( Ω )
0
4
25°C
–25°C
1
2
3
Gate to Source Voltage
2
1
0.2
VGS = 4 V
10 V
0.1
0.05
0.1 0.2
1.2
0.5 1
2
5 10
Drain Current I D (A)
20
Pulse Test
ID=5A
1.6
0.8
2A
0.4
0
4
5
V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
0.5
2.0
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Drain Current
ID
(A)
V DS = 10 V
Pulse Test
V DS(on) (V)
Typical Transfer Characteristics
5
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1A
2
4
6
Gate to Source Voltage
8
10
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
1.0
Pulse Test
0.8
ID=5A
0.6
V GS = 4 V
0.4
2A
1A
5A
1 A, 2 A
10 V
0.2
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
4AK19
Body–Drain Diode Reverse
Recovery Time
10
5000
Reverse Recovery Time trr (ns)
5
Tc = –25 °C
2
75 °C
1
25 °C
0.5
0.1
0.1
V DS = 10 V
Pulse Test
0.2
0.5
1
2
5
1000
500
200
100
50
0.1
10
Drain Current I D (A)
Typical Capacitance vs.
Drain to Source Voltage
1000
V DS (V)
Ciss
30
Drain to Source Voltage
Capacitance C (pF)
Dynamic Input Characteristics
Coss
100
10
3
1
Crss
0.3
0.1
0
10
20
30
40
Drain to Source Voltage V DS (V)
0.2
0.5
1
2
5
10
Reverse Drain Current I DR (A)
100
VGS = 0
f = 1 MHz
300
di/dt = 50 A/µs
V GS = 0, Ta = 25°C
50
20
VGS
80
16
VDS
V DD = 25 V
50 V
80 V
60
40
20
0
12
8
V DD = 25 V
50 V
80 V
ID=5A 4
4
8
12
16
Gate Charge Qg (nc)
V GS (V)
0.2
2000
Gate to Source Voltage
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
0
20
5
4AK19
5
t d(off)
5
2
tf
1
tr
0.5
t d(on)
0.2
0.1
0.1
V GS = 10 V, V DD = 30 V
PW = 20 µs, duty < 1 %
0.2
0.5
1
Drain Current
2
5
I D (A)
10
Reverse Drain Current I DR (A)
10
Switching Time t (µs)
Reverse Drain Current vs.
Souece to Drain Voltage
Switching Characteristics
Pulse Test
4
3
5, 10 V
V GS = 0, –5 V
2
1
0
0.4
0.8
1.2
Drain to Source Voltage
Switching Time Test Circuit
V DS (V)
Waveform
Vout
Monitor
Vin Monitor
1.6
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
6
tr
10%
90%
td(off)
tf
2.0
4AK19
Package Dimensions
Unit: mm
26.5 ± 0.3
1.82
2.54
1
2
3
4
0.55 ± 0.1
1.4
5
6
7
10.5 ± 0.5
2.5
10.0 ± 0.3
4.0 ± 0.2
8
9
10
1.5 ± 0.2
+0.1
0.55 –0.06
Hitachi Code
JEDEC
EIAJ
SP-10
—
—
7
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