PM45502C Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc. PM45502C Outline Equivalent Circuit LF-C D2 D2 S2 Rg D1 G2 S1 S2 G1 S1 D1 S2 No S1 D1 S2 D2 G1 S1 G2 S2 S2 Rg G2 Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2 G1 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 S1 Remarks Power terminal S1 Signal terminals Absolute Maximum Ratings (Ta = 25°C) (Per FET chip) Item Symbol Rating Unit Drain source voltage VDSS 450 V Gate source voltage VGSS ±20 V Drain current ID 50 A Drain peak current ID(peak) 100 A Body to drain diode reverse drain current IDR 50 A Body to drain diode reverse drain peak current IDR(peak) 100 A 1 300 W 150 °C –45 to +125 °C 2000 V Channel dissipation Pch* Channel temperature Tch Storage temperature Tstg Insulation dielectric Notes 1. Value at Tc = 25°C 2. Base to terminals AC minute 2 2 Visol* PM45502C Electrical Characteristics (Ta = 25°C) (Per FET chip) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 450 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — ±50 µA VGS = ±16 V, VDS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — 1 mA VDS = 360 V, VGS = 0 Gate to source threshold voltage VGS(th) 1.5 — 4.0 V ID = 1 mA, VDS = 10 V Drain to source saturation voltage VDS(on) — 2.0 3.0 V ID = 25 A, VGS = 10 V* 1 Static Drain to source on state RDS(on) resistance — 0.08 0.12 Ω ID = 25 A, VGS = 10 V* 1 Forward transfer admittance |yfs| 25 40 — S ID = 25 A, VDS = 10 V* Input capacitance Ciss — 10250 — pF VDS = 10 V, VGS = 0 Output capacitance Coss — 3600 — pF f = 1 MHz Reverse transfer capacitance Crss — 400 — pF Turn-on delay time td(on) — 150 — ns ID = 25 A, VGS = 10 V Rise time tr — 700 — ns RL = 1.2 Ω Turn-off delay time td(off) — 800 — ns Fall time tf — 600 — ns Body to drain diode forward voltage VDF — 1.2 — V IF = 25 A, VGS = 0 Body to drain diode reverse recovery time trr — 200 — ns IF = 25 A, VGS = 0 diF/dt = 100 A/µs Note 1 1. Pulse Test Mechanical Characteristics Item Symbol Condition Rating Unit Fixing strength — Mounting into main-terminal with M5 screw 15 to 20 kg•cm — Mounting into heat sink with M6 screw 20 to 30 kg•cm — Typical value 300 g Weight 3 PM45502C Power vs. Temperature Derating Channel Dissipation Pch (W) 600 400 200 0 50 100 Case Temperature TC (°C) 150 Maximum Safe Operation Area 100 PW D C Drain Current ID (A) 30 10 = O pe 0 10 m s ra tio n 10 1 (1 (T C = 10 µs µs m s Sh ot ) 25 3 Operation in this area is limited by RDS (on) °C ) 1.0 Ta = 25°C PM45502C PM50502C 0.3 0.1 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 100 Drain Current ID (A) 80 10 V 7.0 V Pulse Test 6.0 V 5.5 V 60 5.0 V 40 4.5 V 20 VGS = 4.0 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Typical Transfer Characteristics 100 –25°C Drain Current ID (A) Ta = 25°C 75°C 80 VDS = 20 V Pulse Test 60 40 20 0 4 2 6 8 4 Gate to Source Voltage VGS (V) 10 Drain to Source Saturation Voltage VDS (on) (V) PM45502C Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 75 A 6 50 A 4 ID = 25 A 2 0 4 12 16 8 Gate to Source Voltage VGS (V) 20 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.5 VGS = 10 V Pulse Test 0.2 0.1 15 V 0.05 0.02 0.01 0.005 2 5 20 10 50 100 Drain Current ID (A) 200 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.20 VGS = 10 V Pulse Test 0.16 0.12 75 A 50 A ID = 25 A 0.08 0.04 0 –40 40 0 80 120 Case Temperature TC (°C) 160 5 PM45502C Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 50 –25°C VDS = 10 V Pulse Test 20 75°C Ta = 25°C 10 5 2 1.0 0.5 0.5 1.0 5 2 20 10 Drain Current ID (A) 50 Body to Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 1,000 di/dt = 100 A/µs, VGS = 0 Ta = 25°C Pulse Test 500 200 100 50 20 10 0.5 10 2 1.0 5 20 Reverse Drain Current IDR (A) 50 Typical Capacitance vs. Drain to Source Voltage Capacitance C (nF) 50 VGS = 0 f = 1 MHz Ciss 10 Coss 1 0.1 Crss 0.05 0 20 10 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics Drain to Source Voltage VDS (V) 400 VDS VDD = 100 V 16 250 V 400 V 12 300 VGS 200 100 8 VDD = 400 V 250 V 100 V ID = 50 A 4 0 0 6 200 100 300 400 Gate Charge Qg (nc) 500 Gate to Source Voltage VGS (V) 20 500 PM45502C Switching Characteristics 5,000 Switching Time t (ns) VGS = 10 V PW = 10 µs, duty < 1% 2,000 td (off) 1,000 tf 500 tr 200 td (on) 100 50 1 2 10 20 5 Drain Current ID (A) 50 100 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 100 80 Pulse Test 60 40 20 0 5 V, 10 V VGS = 0, –10 V 0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V) 7 Normalized Transient Thermal Impedance γS (t) PM45502C Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 0.416°C/W, TC = 25°C 0.1 0.1 0.05 0.03 0.01 10 µ PDM 0.02 0.01 T 1 Shot Pulse 100 µ 1m 10 m Pulse Width PW (s) 100 m Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50 Ω VDD . =. 30 V Waveforms 90% Vin Vout td (on) 8 10% 10% 90% tr 10% 90% td (off) tf PW 1 D = PW T 10 PM45502C When using this document, keep the following in mind: 1. 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