2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A 3 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 160 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 160 V, IE = 0 60 — 200 VCE = 5 V, IC = 0.15 A hFE2 30 — — VCE = 5 V, IC = 0.5 A Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 0.5 A, IB = 50 mA, Pulse Base to emitter voltage VBE — — 0.9 V VCE = 5 V, IC = 0.15 A, Pulse DC current transfer ratio Note: hFE1* 1 1. The 2SD1421 is grouped by h FE1 as follows. Mark ED EE hFE1 60 to 120 100 to 200 2 2SD1421 Typical Output Characteristics Maximum Collector Dissipation Curve 1.0 Collector Current IC (A) Collector Power Dissipation Pc (W) (on the alumina ceramic board) 1.2 0.8 0.4 0.8 2.5 2.0 0.6 1.5 0.4 1.0 0.2 0.5 mA IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) 10 20 30 40 50 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 500 200 50 20 10 25 –25 100 5 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE 300 VCE = 5 V Pulse Ta = 75 °C Collector Current IC (mA) Pulse 0 5. 0 4. 3.5 0 3. VCE = 5 V Pulse 250 200 150 100 50 0 1 3 10 30 100 300 1,000 3,000 Collector Current IC (mA) 3 Collector to Emitter Saturation Voltage vs. Collector Current 1.2 IC = 10 IB Pulse 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 240 Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) 2SD1421 VCE = 5 V 200 160 120 80 40 0 10 30 100 300 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 4 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 1,000 Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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