DC COMPONENTS CO., LTD. BC307 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ Absolute Maximum Ratings(TA=25oC) Characteristic .500 Min (12.70) Symbol Rating Unit VCES -50 V VCEO -45 V VEBO -5 V Collector Current IC -100 mA Total Power Dissipation PD 500 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o Collector-Emitter Voltage Emitter-Base Voltage .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Volatge Collector Cutoff Current (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Symbol Min Typ Max Unit BVCES -50 - - V Test Conditions BVCEO -45 - - V IC=-2mA, IB=0 BVEBO -5 - - V IE=-10µA, IC=0 ICES - -2 -15 nA VCE=-45V, IB=0 IC=-10µA, VEB=0 VCE(sat)1 - - -0.3 V IC=-10mA, IB=-0.5mA VCE(sat)2 - -0.5 -0.6 V IC=-100mA, IB=-5mA VBE(sat)1 - -0.7 -0.8 V IC=-10mA, IB=-0.5mA VBE(sat)2 - -0.85 -1.1 V IC=-100mA, IB=-5mA VBE(on) -0.55 -0.62 -0.7 V IC=-2mA, VCE=-5V hFE 120 - 800 - Transition Frequency fT - 130 - MHz Output Capacitance Cob - - 6 pF VCB=-10V, f=1MHz Noise Figure NF - - 10 dB VCE=-5V, IC=-200µA, f=1KHz, RS=2KΩ, B=200Hz (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE Rank A B C Range 120~220 180~460 380~800 IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V, f=50MHz