DCCOM BC307

DC COMPONENTS CO., LTD.
BC307
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier
applications.
TO-92
Pinning
.190(4.83)
.170(4.33)
1 = Collector
2 = Base
3 = Emitter
o
2 Typ
.190(4.83)
.170(4.33)
o
2 Typ
Absolute Maximum Ratings(TA=25oC)
Characteristic
.500
Min
(12.70)
Symbol
Rating
Unit
VCES
-50
V
VCEO
-45
V
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
500
mW
Junction Temperature
TJ
+150
o
Storage Temperature
TSTG
-55 to +150
o
Collector-Emitter Voltage
Emitter-Base Voltage
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Breakdown Volatge
Emitter-Base Breakdown Volatge
Collector Cutoff Current
(1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
Symbol
Min
Typ
Max
Unit
BVCES
-50
-
-
V
Test Conditions
BVCEO
-45
-
-
V
IC=-2mA, IB=0
BVEBO
-5
-
-
V
IE=-10µA, IC=0
ICES
-
-2
-15
nA
VCE=-45V, IB=0
IC=-10µA, VEB=0
VCE(sat)1
-
-
-0.3
V
IC=-10mA, IB=-0.5mA
VCE(sat)2
-
-0.5
-0.6
V
IC=-100mA, IB=-5mA
VBE(sat)1
-
-0.7
-0.8
V
IC=-10mA, IB=-0.5mA
VBE(sat)2
-
-0.85
-1.1
V
IC=-100mA, IB=-5mA
VBE(on)
-0.55
-0.62
-0.7
V
IC=-2mA, VCE=-5V
hFE
120
-
800
-
Transition Frequency
fT
-
130
-
MHz
Output Capacitance
Cob
-
-
6
pF
VCB=-10V, f=1MHz
Noise Figure
NF
-
-
10
dB
VCE=-5V, IC=-200µA, f=1KHz,
RS=2KΩ, B=200Hz
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
Classification of hFE
Rank
A
B
C
Range
120~220
180~460
380~800
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V, f=50MHz