IXYS FMP26-02P

Advance Technical Information
PolarTM P & N-Channel
Power MOSFET
Common Drain Topology
FMP26-02P
P CH.
N CH.
- 200V
200V
- 17A
26A
RDS(on)
170mΩ
Ω
60mΩ
Ω
trr(typ)
240ns
150ns
VDSS
43
ID25
T1
5
34
T2
11
22
Symbol
Test Conditions
ISOPLUS i4-PakTM
Maximum Ratings
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOLD
50/60HZ, RMS, t = 1min, leads-to-tab
2500
~V
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
FC
Mounting force
20..120 / 4.5..27
N/lb.
1
Isolated Tab
5
Symbol
Test Conditions
CP
Coupling capacitance between shorted
pins and mounting tab in the case
dS ,dA
dS ,dA
Characteristic Values
Min.
Typ.
Max.
pin - pin
pin - backside metal
Weight
40
pF
Features
z
1.7
5.5
mm
mm
9
g
z
z
z
P - CHANNEL
z
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
- 200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 200
V
z
VGSS
Continuous
± 20
V
z
VGSM
Transient
± 30
V
ID25
TC = 25°C
-17
A
IDM
TC = 25°C, pulse width limited by TJM
- 70
A
IA
TC = 25°C
- 26
A
z
EAS
TC = 25°C
1.5
J
z
PD
TC = 25°C
125
W
© 2008 IXYS CORPORATION, All rights reserved
Maximum Ratings
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low QG
Low Drain-to-Tab capacitance
Low package inductance
Advantages
z
z
Low gate drive requirement
High power density
Low drain to ground capacitance
Fast switching
Applications
z
z
z
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
DS100033(08/08)
FMP26-02P
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = - 250μA
- 200
VGS(th)
VDS = VGS, ID = - 250μA
- 2.5
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = -10V, ID = -13A, Note 1
gfs
VDS = -10V, ID = -13A, Note 1
V
- 4.5
V
± 100
nA
-10 μA
- 150 μA
TJ = 125°C
170 mΩ
10
Ciss
Coss
VGS = 0V, VDS = - 25 V, f = 1 MHz
Crss
17
S
2740
pF
540
pF
100
pF
td(on)
Resistive Switching Times
18
ns
tr
VGS = -10V, VDS = 0.5 z VDSS, ID = -13A
33
ns
td(off)
RG = 3.3Ω (External)
46
ns
tf
21
ns
Qg(on)
56
nC
18
nC
20
nC
Qgs
VGS= -10V, VDS = 0.5
z
ISOPLUS i4-PakTM Outline
VDSS, ID = -13A
Qgd
Ref: IXYS CO 0077 R0
1.0 °C/W
RthJC
RthCS
°C/W
0.15
Drain-Source Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
Symbol
Test Conditions2
IS
VGS = 0V
- 17
A
ISM
Repetitive, pulse width limited by TJM
-104
A
VSD
IF = -13A, VGS = 0 V, Note 1
- 3.2
V
trr
IF = -13A, di/dt = 100 A/μs
240
ns
QRM
VR = -100V, VGS = 0V
2.2
μC
-18
A
IRM
ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMP26-02P
N - CHANNEL
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1MΩ
200
V
VGSS
Continuous
± 20
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
26
A
IDM
TC = 25°C, pulse width limited by TJM
120
A
IA
EAS
TC = 25°C
TC = 25°C
50
1
A
J
PD
TC = 25°C
125
W
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250 μA
200
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 25A, (Note 1)
gfs
VDS = 10V, ID = 25A, (Note 1)
VGS = 0V, VDS = 25 V, f = 1 MHz
Crss
5.0
V
± 100
nA
25 μA
250 μA
TJ = 150°C
Ciss
Coss
V
60 mΩ
12
23
S
2720
pF
490
pF
105
pF
td(on)
Resistive Switching Times
26
ns
tr
VGS = 10V, VDS = 0.5 z VDSS, ID = 25A
35
ns
td(off)
RG = 10Ω (External)
tf
Qg(on)
Qgs
VGS= 10V, VDS = 0.5
z
VDSS, ID = 25A
Qgd
70
ns
30
ns
70
nC
17
nC
37
nC
1.0 °C/W
RthJC
RthCS
© 2008 IXYS CORPORATION, All rights reserved
0.15
°C/W
FMP26-02P
Source-Drain Diode
Symbol
Test Conditions3
IS
VGS = 0V
ISM
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
26
A
Repetitive, pulse width limited by TJM
120
A
VSD
IF = 50A, VGS = 0V, Note 1
1.5
V
trr
IF = 25A, -di/dt = 100A/μs
150
ns
QRM
VR = 100V, VGS = 0V
2.0
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ΙΞΨΣ ρεσερϖεσ τηε ριγητ το χηανγε λιμιτσ, τεστ χονδιτιονσ, ανδ διμενσιονσ.