Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology FMP36-015P P CH. N CH. - 150V 150V - 22A 36A RDS(on) 110mΩ Ω 40mΩ Ω trr(typ) 228ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions Maximum Ratings TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60HZ, RMS, t=1s, leads-to-tab FC Mounting force - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 2500 V~ 20..120 / 4.5..27 N/lb. ISOPLUS i4-PakTM 1 Isolated Tab 5 Symbol Test Conditions Characteristic Values Min. Typ. Max. CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal 40 pF Features z Weight 1.7 5.5 mm mm 9 g z z P - CHANNEL z z Symbol Test Conditions VDSS TJ = 25°C to 150°C -150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ -150 V VGSS Continuous ± 20 V z VGSM Transient ± 30 V z ID25 TC = 25°C - 22 A IDM TC = 25°C, pulse width limited by TJM - 90 A IA TC = 25°C - 36 A EAS TC = 25°C 1.5 J PD TC = 25°C 125 W Maximum Ratings Advantages z z Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications z z z z z © 2008 IXYS CORPORATION, All rights reserved Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies DS100034(08/08) FMP36-015P Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 μA -150 VGS(th) VDS = VGS, ID = - 250μA - 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = -18A, Note 1 gfs VDS = -10V, ID = -18A, Note 1 V - 4.5 V ± 100 nA -10 μA - 250 μA TJ = 125°C 110 mΩ 11 Ciss Coss VGS = 0V, VDS = - 25 V, f = 1MHz Crss 19 S 3100 pF 610 pF 100 pF td(on) Resistive Switching Times 21 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = -18A 31 ns td(off) RG = 3.3Ω (External) 36 ns tf 15 ns Qg(on) 55 nC 20 nC 18 nC Qgs VGS= -10V, VDS = 0.5 z ISOPLUS i4-PakTM Outline VDSS, ID = -18A Qgd Ref: IXYS CO 0077 R0 1.0 °C/W RthJC RthCS °C/W 0.15 Drain-Source Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions2 IS VGS = 0V - 22 A ISM Repetitive, pulse width limited by TJM -140 A VSD IF = -18A, VGS = 0 V, Note 1 - 3.3 V trr IF = -18A, di/dt = 100 A/μs 228 ns QRM VR = - 75V, VGS = 0V 2.0 μC -17.6 A IRM IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP36-015P N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1MΩ 150 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C 36 A IDM TC = 25°C, pulse width limited by TJM 150 A IA EAS TC = 25°C TC = 25°C 50 1.0 A J PD TC = 25°C 125 W Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250 μA 150 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 31A, (Note 1) gfs VDS = 10V, ID = 31A, (Note 1) TJ = 150°C Ciss Coss V VGS = 0V, VDS = 25 V, f = 1 MHz Crss 14 5.5 V ± 100 nA 25 250 μA μA 33 40 mΩ 24 S 2250 pF 660 pF 185 pF td(on) Resistive Switching Times 27 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 31A 38 ns td(off) RG = 10Ω (External) 76 ns tf 35 ns Qg(on) 70 nC 20 nC 38 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 31A Qgd 1.0 °C/W RthJC RthCS © 2008 IXYS CORPORATION, All rights reserved 0.15 °C/W FMP36-015P Source-Drain Diode Symbol Test Conditions3 IS VGS = 0V ISM Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 36 A Repetitive, pulse width limited by TJM 150 A VSD IF = 62A, VGS = 0V, Note 1 1.5 V trr IF = 25A, -di/dt = 100A/μs 150 ns QRM VR = 100V, VGS = 0V 2.0 μC Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right IXYS reserves the right to change limits, test conditions, and dimensions.