Advance Technical Information TrenchTM P & N-Channel Power MOSFET Common Drain Topology FMP76-010T P CH. N CH. - 100V 100V - 54A 62A RDS(on) 24mΩ Ω 11mΩ Ω trr(typ) 70ns 67ns VDSS 43 5 T1 34 T2 11 ID25 22 ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings TJ TJM Tstg -55 ... +150 150 -55 ... +150 °C °C °C VISOLD 50/60HZ, RMS, t = 1min, leads-to-tab 2500 ~V TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 300 260 °C °C FC Mounting force 20..120 / 4.5..27 N/lb. 1 Isolated Tab 5 Features Symbol Test Conditions CP Coupling capacitance between shorted pins and mounting tab in the case dS ,dA dS ,dA pin - pin pin - backside metal z Characteristic Values Min. Typ. Max. 40 pF z Weight 1.7 5.5 mm mm 9 g P - CHANNEL z z z Advantages z Symbol Test Conditions VDSS TJ = 25°C to 150°C - 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 100 V Maximum Ratings z z z VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C - 54 A z IDM TC = 25°C, pulse width limited by TJM - 230 A z IA TC = 25°C - 38 A z EAS TC = 25°C 1.0 J z PD TC = 25°C 132 W © 2008 IXYS CORPORATION, All rights reserved Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rated Low QG Low Drain-to-Tab capacitance Low package inductance Low gate drive requirement High power density Low drain to ground capacitance Fast switching Applications z DC and AC motor drives Class AB audio amplifiers Multi-phase DC to DC converters Industrial battery chargers Switching power supplies DS100037(09/08) FMP76-010T Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250 μA - 100 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = -10V, ID = - 38A, Note 1 gfs VDS = -10V, ID = - 38A, Note 1 V - 4.0 V ± 100 nA -15 μA - 750 μA TJ = 125°C 24 mΩ 35 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss 58 S 13.7 nF 890 pF 275 pF td(on) Resistive Switching Times 25 ns tr VGS = -10V, VDS = 0.5 z VDSS, ID = - 38A 40 ns td(off) RG = 1Ω (External) 52 ns 20 ns 197 nC tf Qg(on) Qgs ISOPLUS i4-PakTM Outline VGS= -10V, VDS = 0.5 z VDSS, ID = - 38A Qgd 65 nC 65 nC Ref: IXYS CO 0077 R0 0.95 °C/W RthJC RthCS °C/W 0.15 Drain-Source Diode Symbol Test Conditions2 IS VGS = 0V ISM Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. - 54 A Repetitive, pulse width limited by TJM - 304 A VSD IF = - 38A, VGS = 0V, Note 1 - 1.3 V trr IF = - 38A, di/dt = 100A/μs QRM VR = - 50V, VGS = 0V IRM 70 ns 215 nC -6 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 FMP76-010T N - CHANNEL Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 100 V VGSM Transient ± 20 V ID25 TC = 25°C 62 A IDM TC = 25°C, pulse width limited by TJM 300 A IA EAS TC = 25°C TC = 25°C 65 500 A mJ PD TC = 25°C 89 W Symbol Test Conditions2 (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250 μA 100 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±20 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 25A, (Note 1) gfs VDS = 10V, ID = 60A, (Note 1) VGS = 0V, VDS = 25 V, f = 1 MHz Crss td(on) Resistive Switching Times 4.5 V ± 200 nA 5 μA 250 μA TJ = 150°C Ciss Coss V 11 mΩ 55 93 S 5080 pF 635 pF 95 pF 30 ns tr VGS = 10V, VDS = 0.5 z VDSS, ID = 25A 47 ns td(off) RG = 5Ω (External) 44 ns 28 ns 104 nC 30 nC 29 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A Qgd 1.4 °C/W RthJC RthCS © 2008 IXYS CORPORATION, All rights reserved 0.15 °C/W FMP76-010T Source-Drain Diode Symbol Test Conditions3 IS VGS = 0V ISM Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. 62 A Repetitive, pulse width limited by TJM 350 A VSD IF = 25A, VGS = 0V, Note 1 1.0 V trr QRM IRM IF = 25A, -di/dt = 100A/μs VR = 50V, VGS = 0V 67 160 4.7 ns nC A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions.