IXYS FMP76-010T

Advance Technical Information
TrenchTM P & N-Channel
Power MOSFET
Common Drain Topology
FMP76-010T
P CH.
N CH.
- 100V
100V
- 54A
62A
RDS(on)
24mΩ
Ω
11mΩ
Ω
trr(typ)
70ns
67ns
VDSS
43
5
T1
34
T2
11
ID25
22
ISOPLUS i4-PakTM
Symbol
Test Conditions
Maximum Ratings
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
VISOLD
50/60HZ, RMS, t = 1min, leads-to-tab
2500
~V
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
FC
Mounting force
20..120 / 4.5..27
N/lb.
1
Isolated Tab
5
Features
Symbol
Test Conditions
CP
Coupling capacitance between shorted
pins and mounting tab in the case
dS ,dA
dS ,dA
pin - pin
pin - backside metal
z
Characteristic Values
Min.
Typ.
Max.
40
pF
z
Weight
1.7
5.5
mm
mm
9
g
P - CHANNEL
z
z
z
Advantages
z
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
- 100
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 100
V
Maximum Ratings
z
z
z
VGSS
Continuous
± 20
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
- 54
A
z
IDM
TC = 25°C, pulse width limited by TJM
- 230
A
z
IA
TC = 25°C
- 38
A
z
EAS
TC = 25°C
1.0
J
z
PD
TC = 25°C
132
W
© 2008 IXYS CORPORATION, All rights reserved
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low QG
Low Drain-to-Tab capacitance
Low package inductance
Low gate drive requirement
High power density
Low drain to ground capacitance
Fast switching
Applications
z
DC and AC motor drives
Class AB audio amplifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
DS100037(09/08)
FMP76-010T
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = - 250 μA
- 100
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = -10V, ID = - 38A, Note 1
gfs
VDS = -10V, ID = - 38A, Note 1
V
- 4.0
V
± 100
nA
-15 μA
- 750 μA
TJ = 125°C
24 mΩ
35
Ciss
Coss
VGS = 0V, VDS = - 25V, f = 1MHz
Crss
58
S
13.7
nF
890
pF
275
pF
td(on)
Resistive Switching Times
25
ns
tr
VGS = -10V, VDS = 0.5 z VDSS, ID = - 38A
40
ns
td(off)
RG = 1Ω (External)
52
ns
20
ns
197
nC
tf
Qg(on)
Qgs
ISOPLUS i4-PakTM Outline
VGS= -10V, VDS = 0.5 z VDSS, ID = - 38A
Qgd
65
nC
65
nC
Ref: IXYS CO 0077 R0
0.95 °C/W
RthJC
RthCS
°C/W
0.15
Drain-Source Diode
Symbol
Test Conditions2
IS
VGS = 0V
ISM
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
- 54
A
Repetitive, pulse width limited by TJM
- 304
A
VSD
IF = - 38A, VGS = 0V, Note 1
- 1.3
V
trr
IF = - 38A, di/dt = 100A/μs
QRM
VR = - 50V, VGS = 0V
IRM
70
ns
215
nC
-6
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
FMP76-010T
N - CHANNEL
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
100
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
100
V
VGSM
Transient
± 20
V
ID25
TC = 25°C
62
A
IDM
TC = 25°C, pulse width limited by TJM
300
A
IA
EAS
TC = 25°C
TC = 25°C
65
500
A
mJ
PD
TC = 25°C
89
W
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250 μA
100
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 25A, (Note 1)
gfs
VDS = 10V, ID = 60A, (Note 1)
VGS = 0V, VDS = 25 V, f = 1 MHz
Crss
td(on)
Resistive Switching Times
4.5
V
± 200
nA
5 μA
250 μA
TJ = 150°C
Ciss
Coss
V
11 mΩ
55
93
S
5080
pF
635
pF
95
pF
30
ns
tr
VGS = 10V, VDS = 0.5 z VDSS, ID = 25A
47
ns
td(off)
RG = 5Ω (External)
44
ns
28
ns
104
nC
30
nC
29
nC
tf
Qg(on)
Qgs
VGS= 10V, VDS = 0.5
z
VDSS, ID = 25A
Qgd
1.4 °C/W
RthJC
RthCS
© 2008 IXYS CORPORATION, All rights reserved
0.15
°C/W
FMP76-010T
Source-Drain Diode
Symbol
Test Conditions3
IS
VGS = 0V
ISM
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
62
A
Repetitive, pulse width limited by TJM
350
A
VSD
IF = 25A, VGS = 0V, Note 1
1.0
V
trr
QRM
IRM
IF = 25A, -di/dt = 100A/μs
VR = 50V, VGS = 0V
67
160
4.7
ns
nC
A
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.