SIRECT SG75S12S

SG75S12S
Discrete IGBTs
Dimensions SOT-227(ISOTOP)
SG75S12S
IC
A
75
VCE
V
1200
Maximum Rated Values
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
(Tvj = 25°C, unless specified otherwise)
Parameter
Symbol
Collector-Emitter Voltage
VCES
Conditions
VGE shorted
Values
Unit
1200
V
DC Collector Current
IC
Ths = 70°C
75
A
Peak Collector Current
ICM
Pulse: tp = 1ms, Ths = 70°C
150
A
_
+20
V
340
W
75
A
150
A
Values
Unit
Gate Emitter Voltage
Total Power Dissipation
VGES
Ptot
Ths = 25°C per switch
IGBT Switching SOA
SwSOA
_ 1000V,
IC = 150A, VCEM = 1200V, VCC <
_
VGE = +15V,
Tvj = 125°C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA
SCSOA
VCC = 900V, VCEM = 1200V, tp = 10µs,
_
VGE = +15V,
Tvj = 125°C
DC Forward Current
IF
Peak Forward Current
IFM
Maximum Rated Values (cont.)
Parameter
Pulse: tp = 1ms, Ths = 70°C
(Tvj = 25°C, unless specified otherwise)
Symbol
Conditions
Junction Temperature
Tvj
-40 ~ 150
°C
Storage Temperature
Ttstg / Tcop
-40 ~ 125
°C
2500
V
Isolation Voltage
Viso
1min, f = 50Hz
SG75S12S
Discrete IGBTs
IGBT Characteristic Values
Parameter
Collector-Emitter
Saturation Voltage
Collector Cut-off Current
Gate-Emitter leakage
Current
Gate-Emitter Threshold
Voltage
(Tvj = 25°C, unless specified otherwise)
VCE(sat)* IC = 75A, VGE = 15V
Tvj = 125°C
2.20
2.35
V
V
mA
IGES
_
VCE = 0V, VGE = +20V,
Tvj = 125°C
_
+500
nA
6.5
V
VGE(TO) IC = 3mA, VCE = VGE
Cies
Output Capacitance
Coes
Reverse Transfer
Capacitance
Cres
Turn-On Delay Time
td(on)
Turn-on Switching Energy
2.00
6
Input Capacitance
Fall Time
Tvj = 25°C
max. Unit
VCE = 1200V, VGE = 0V, Tvj = 125°C
Qge
Turn-Off Delay Time
min. typ.
ICES
Total Gate Charge
Rise Time
Conditions
Sybmol
tr
td(off)
tf
IC = 75A, VCE = 600V, VGE = -15 to 15V
VCE = 25V, VGE = 0V, f = 1MHz
IC = 75A, VCC = 600V, Rgon = 15 ,
_
Tvj = 125°C, VGE = +15V
IC = 75A, VCC = 600V, Rgoff = 15 ,
_
Tvj = 125°C, VGE = +15V
Eon
Rgon = 15
Eoff
Rgoff = 15
Module stray Inductance
Plus to Minus
LsDC
Resistance terminal-chip
RCC'+EE'
4.5
IC = 75A, Tvj = 125°C,
_
VCC = 600V, VGE = +15V,
inductive load, integrated up
to: 3% VCE (Eon), 1% IC (Eoff)
* Note 1: Collector emitter saturation voltage is given at die level.
750
nC
6.5
nF
1.6
nF
1.4
nF
0.1
µs
0.05
µs
0.50
µs
0.09
µs
8.5
mJ
7.0
mJ
25
Ths = 25°C
Ths = 125°C
1.25
1.90
nH
m
SG75S12S
Discrete IGBTs
Diode Characteristic Values
Parameter
(Tj = 25°C, unless specified otherwise)
Symbol
Forward Voltage
VF*
Reverse Recovery Current
Irrm
Reverse Recovery Charge
Qrr
Reverse Recovery Time
trr
Reverse Recovery Energy
Resistance terminal-chip
Erec
Conditions
IF = 75A
typ.
max.
Tvj = 25°C
2.00
2.40
Tvj = 125°C
2.00
min.
IF = 75A, Rgon = 15 , VCC = 600V,
_
VGE = +15V,
Tvj = 125°C
IF = 75A, Tvj = 125°C, VCC = 600V,
_
Rgon = 15 , VGE = +15V,
inductive load, fully integrated
Ths = 25°C
Ths = 125°C
RCC'+EE'
Unit
V
75
A
14
µC
0.35
µs
5.5
mJ
1.25
1.90
m
* Note 2: Forward voltage is gaiven at die level
Thermal Characteristics
(Tj = 25°C, unless specified otherwise)
Parameter
Symbol
IGBT Thermal Resistance
Junction to Heatsink
Diode Thermal Resistance
Junction to Heatsink
Rth j-h
Igbt
Rth j-h
Diode
Equivalent IGBT Thermal
Resistance Junct. to Case
Equivalent Diode Thermal
Resistance Junct. to Case
Rth j-c
Igbt
Rth j-c
Diode
Conditions
min.
typ.
max.
Unit
0.370 °C/W
Heatsink:
flatness < +/-20µm,
roughness < 6µm without ridge
Thermal grease:
thickness: 30µm < t < 50µm
0.740 °C/W
0.235 °C/W
0.550 °C/W
SG75S12S
Discrete IGBTs
Fig. 1
Typ. Output Characteristics
at Tvj=25°C
Fig. 2
Typ. Output Characteristics
at Tvj=125°C
Fig. 3
Typ. Transfer Characteristics
Fig. 4
Typ. Gate charge Characteristi
SG75S12S
Discrete IGBTs
Fig. 5
Typ. Switching Energies per pulse vs
on-state current
Fig. 6
Typ. Switching Energies per pulse v
gate resistor
Fig. 7
Typ. Switching times vs on-state
current
Fig. 8
Typ. Switching times vs gate resistor
SG75S12S
Discrete IGBTs
Fig. 9
Fig. 11
Typ. Capacitances vs collector-emitter
Voltage
Typ. Reverse Recovery
Characteristics vs forward current
Fig. 10
Typ. Diode forward Characteristics
Fig. 12
Typ. Reverse Recovery Characteristics
vs gate resistor
SG75S12S
Discrete IGBTs
Fig. 13
Typ. Thermal impedance vs time