IRF40N03 N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRF40N03..............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. cIRF40N03 Characteristic Symbol Min VDSS 30 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage ...V (VGS = 0 V, ID = 250 µA) ӔVDSS/ǻTJ Breakdown Voltage Temperature Coefficient V/к 0.037 (Reference to 25к, ID = 1mA) Drain-to-Source Leakage Current IDSS µA (VDS = 30 V, VGS = 0 V, TJ = 25к) 1 (VDS = 24 V, VGS = 0 V, TJ = 150к) 25 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 2.0 3.0 V 14 17 (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage 1.0 (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance RDS(on) (Note 4) (VGS = 10 V, ID = 20A) Forward Transconductance (VDS = 10 V, ID = 20A) (Note 4) gFS mȍ 26 S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Ciss ................800 Coss 380 pF pF Crss ...............133 pF . (VDS = 24 V, ID = 20 A, Qg 17 ... VGS = 5 V) (Note 5) Qgs 3 ... nC nC Qgd ..................10 ... nC Gate-to-Drain (“Miller”) Charge Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDS = 15 V, ID = 20 A, VGS = 10 V, RG = 3.3ȍ) (Note 5) td(on) 7.2 trise 60 td(off) 22.5 tfall 10 ns ns .. ns .................. ns Source-Drain Diode Characteristics IS Continuous Source Current (Body Diode) 40 A Integral pn-diode in MOSFET ISM Pulse Source Current (Body Diode) 170 A 1.3 V Diode Forward On-Voltage (IS = 40 A, VGS = 0 V) VSD Reverse Recovery Time (IF = 40A, VGS = 0 V, trr 55 ns di/dt = 100A/µs) Qrr 110 nC Reverse Recovery Charge ........................ Note 1: TJ = +25к to 150к Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 12.0A, di/dt 100A/µs, VDD BVDSS, TJ = +150к Note 4: Pulse width 250µs; duty cycle 2% Note 5: Essentially independent of operating temerpature. www.magic-matsu.com Page 2 IRF40N03 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 40 40 25 C 35 I D , Drain C urrent (A) V G S =10,9,8,7,6,5V I D , Drain C urrent (A) 30 25 V G S =4V 20 15 10 30 T j=125 C 20 10 -55 C 5 0 0 0 0.5 1 1.5 2 2.5 1 2 V DS , Drain-to-S ource Voltage (V ) 5 6 1.3 R DS (ON) , Normalized Drain-S ource, On-R es is tance 3000 2400 1800 C is s 1200 C os s 600 C rs s 0 V G S =10V 1.2 T j=125 C 1.1 5 10 15 20 25 -55 C 0.9 0.8 30 0 10 V DS , Drain-to S ource Voltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage V DS =V G S I D =250uA 1.05 1.00 0.95 0.90 0.85 0 25 50 75 30 40 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.15 0.80 -50 -25 20 I D , Drain C urrent(A) F igure 3. C apacitance 1.10 6 25 C 1.0 0.7 0 V th, Normalized G ate-S ource T hres hold V oltage 4 F igure 2. Trans fer C haracteris tics 3600 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 40 V DS =10V 50 Is , S ource-drain current (A) gF S , T rans conductance (S ) 3 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 0 3 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent V S D , B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent www.magic-matsu.com Page 3 IRF40N03 300 200 100 10 V DS =10V I D =40A 8 1m I D , Drain C urrent (A) 6 V G S , G ate to S ource V oltage (V ) POWER MOSFET 6 4 2 5 10 15 20 25 30 35 S (O 10 10 0m 1s s ms s V G S =10V S ingle P ulse T c=25 C 0.5 0.1 40 it DC 1 0 0 RD 10 N) L im 1 10 30 60 V DS , Drain-S ource V oltage (V ) Qg, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge V DD ton V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL 10% INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve www.magic-matsu.com Page 4 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com