SUNTAC IRF40N03

IRF40N03
!
N-CHANNEL Power MOSFET
APPLICATION
FEATURES
‹Fast Switching
‹ Low ON Resistance
‹Simple Drive Requirement
‹ Low Gate Charge
‹Low Gate Charge
‹ Peak Current vs Pulse Width Curve
‹ Inductive Switching Curves
VDSS
RDS(ON) Max.
30V
..17.0mȍ
ID
40A
PIN CONFIGURATION
SYMBOL
TO-220
D
SOURCE
DRAIN
GATE
Front View
G
S
1
2
N-Channel MOSFET
3
ʳ
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current Ё Continuous Tc = 25к, VGS@10V
Ё Continuous Tc = 100к, VGS@10V
Ё Pulsed Tc = 25к, VGS@10V (Note 2)
Symbol
Value
Unit
VDSS
30
V
A
ID
40
ID
30
IDM
170
Gate-to-Source Voltage Ё Continue
VGS
±20
Total Power Dissipation
PD
.50
W
0.4
W/к
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
к
Single Pulse Avalanche Energy L=144µH,ID=40 Amps
EAS
500
mJ
Maximum Lead Temperature for Soldering Purposes
TL
300
к
TPKG
260
к
IAS
60
A
Derating Factor above 25к
Peak Diode Recovery dv/dt (Note 3)
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
V
THERMAL RESISTANCE
Symbol
RșJC
Parameter
Junction-to-case
RșJA
Junction-to-ambient
Min
Typ
Max
2.5
Units
к
62
к/W
Test Conditions
Water cooled heatsink, PD adjusted for a peak junction
temperature of +175к
1 cubic foot chamber, free air
Page 1
IRF40N03
!
N-CHANNEL Power MOSFET
ORDERING INFORMATION
Part Number
Package
....................IRF40N03..............................................TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
cIRF40N03
Characteristic
Symbol
Min
VDSS
30
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
...V
(VGS = 0 V, ID = 250 µA)
ӔVDSS/ǻTJ
Breakdown Voltage Temperature Coefficient
V/к
0.037
(Reference to 25к, ID = 1mA)
Drain-to-Source Leakage Current
IDSS
µA
(VDS = 30 V, VGS = 0 V, TJ = 25к)
1
(VDS = 24 V, VGS = 0 V, TJ = 150к)
25
Gate-to-Source Forward Leakage
IGSS
100
nA
IGSS
-100
nA
2.0
3.0
V
14
17
(VGS = 20 V)
Gate-to-Source Reverse Leakage
(VGS = -20 V)
ON Characteristics
VGS(th)
Gate Threshold Voltage
1.0
(VDS = VGS, ID = 250 µA)
Static Drain-to-Source On-Resistance
RDS(on)
(Note 4)
(VGS = 10 V, ID = 20A)
Forward Transconductance (VDS = 10 V, ID = 20A)
(Note 4)
gFS
mȍ
26
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (VGS = 10 V)
Gate-to-Source Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Ciss
................800
Coss
380
pF
pF
Crss
...............133
pF
.
(VDS = 24 V, ID = 20 A,
Qg
17
...
VGS = 5 V) (Note 5)
Qgs
3
...
nC
nC
Qgd
..................10
...
nC
Gate-to-Drain (“Miller”) Charge
Resistive Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDS = 15 V, ID = 20 A,
VGS = 10 V,
RG = 3.3ȍ) (Note 5)
td(on)
7.2
trise
60
td(off)
22.5
tfall
10
ns
ns
..
ns
..................
ns
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
IS
40
A
Integral pn-diode in MOSFET
Pulse Source Current (Body Diode)
ISM
170
A
1.3
V
Diode Forward On-Voltage
(IS = 40 A, VGS = 0 V)
VSD
Reverse Recovery Time
(IF = 40A, VGS = 0 V,
trr
55
ns
di/dt = 100A/µs)
Qrr
110
nC
Reverse Recovery Charge
........................
Note 1: TJ = +25к to 150к
Note 2: Repetitive rating; pulse width limited by maximum junction
temperature.
Note 3: ISD = 12.0A, di/dt ”100A/µs, VDD ” BVDSS, TJ = +150к
Note 4: Pulse width ” 250µs; duty cycle ” 2%
Note 5: Essentially independent of operating temerpature.
Page 2
IRF40N03
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
40
40
25 C
35
I D , Drain C urrent (A)
V G S =10,9,8,7,6,5V
I D , Drain C urrent (A)
30
25
V G S =4V
20
15
10
30
T j=125 C
20
10
-55 C
5
0
0
0
0.5
1
1.5
2
2.5
1
2
V DS , Drain-to-S ource Voltage (V )
5
6
1.3
R DS (ON) , Normalized
Drain-S ource, On-R es is tance
3000
2400
1800
C is s
1200
C os s
600
C rs s
0
V G S =10V
1.2
T j=125 C
1.1
5
10
15
20
25
-55 C
0.9
0.8
30
0
10
V DS , Drain-to S ource Voltage (V )
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V DS =V G S
I D =250uA
1.05
1.00
0.95
0.90
0.85
0
25
50
75
30
40
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
1.15
0.80
-50 -25
20
I D , Drain C urrent(A)
F igure 3. C apacitance
1.10
6
25 C
1.0
0.7
0
V th, Normalized
G ate-S ource T hres hold V oltage
4
F igure 2. Trans fer C haracteris tics
3600
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
100 125 150
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
60
40
V DS =10V
50
Is , S ource-drain current (A)
gF S , T rans conductance (S )
3
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
C , C apacitance (pF )
0
3
40
30
20
10
0
0
5
10
15
20
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I DS , Drain-S ource C urrent (A)
F igure 7. T rans conductance V ariation
with Drain C urrent
V S D , B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
Page 3
IRF40N03
!
300
200
100
10
1m
I D , Drain C urrent (A)
V DS =10V
I D =40A
8
6
4
2
0
5
10
15
20
25
30
35
RD
10
S
(O
N)
L im
10
10
0m
1s
s
ms
s
V G S =10V
S ingle P ulse
T c=25 C
0.5
0.1
40
it
DC
1
0
1
10
30
60
V DS , Drain-S ource V oltage (V )
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
F igure 9. G ate C harge
V DD
ton
D
tf
90%
90%
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
RL
V IN
10%
INVE R TE D
10%
G
90%
S
V IN
50%
50%
10%
P ULS E WIDTH
F igure 12. S witching Waveforms
F igure 11. S witching T es t C ircuit
2
r(t),Normalized E ffective
T ransient T hermal Impedance
6
V G S , G ate to S ource V oltage (V )
POWER MOSFET
1
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
Page 4