IRF40N03 ! N-CHANNEL Power MOSFET APPLICATION FEATURES Fast Switching Low ON Resistance Simple Drive Requirement Low Gate Charge Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves VDSS RDS(ON) Max. 30V ..17.0mȍ ID 40A PIN CONFIGURATION SYMBOL TO-220 D SOURCE DRAIN GATE Front View G S 1 2 N-Channel MOSFET 3 ʳ ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Ё Continuous Tc = 25к, VGS@10V Ё Continuous Tc = 100к, VGS@10V Ё Pulsed Tc = 25к, VGS@10V (Note 2) Symbol Value Unit VDSS 30 V A ID 40 ID 30 IDM 170 Gate-to-Source Voltage Ё Continue VGS ±20 Total Power Dissipation PD .50 W 0.4 W/к dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 к Single Pulse Avalanche Energy L=144µH,ID=40 Amps EAS 500 mJ Maximum Lead Temperature for Soldering Purposes TL 300 к TPKG 260 к IAS 60 A Derating Factor above 25к Peak Diode Recovery dv/dt (Note 3) Maximum Package Body for 10 seconds Pulsed Avalanche Rating V THERMAL RESISTANCE Symbol RșJC Parameter Junction-to-case RșJA Junction-to-ambient Min Typ Max 2.5 Units к 62 к/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175к 1 cubic foot chamber, free air Page 1 IRF40N03 ! N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRF40N03..............................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. cIRF40N03 Characteristic Symbol Min VDSS 30 Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage ...V (VGS = 0 V, ID = 250 µA) ӔVDSS/ǻTJ Breakdown Voltage Temperature Coefficient V/к 0.037 (Reference to 25к, ID = 1mA) Drain-to-Source Leakage Current IDSS µA (VDS = 30 V, VGS = 0 V, TJ = 25к) 1 (VDS = 24 V, VGS = 0 V, TJ = 150к) 25 Gate-to-Source Forward Leakage IGSS 100 nA IGSS -100 nA 2.0 3.0 V 14 17 (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics VGS(th) Gate Threshold Voltage 1.0 (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance RDS(on) (Note 4) (VGS = 10 V, ID = 20A) Forward Transconductance (VDS = 10 V, ID = 20A) (Note 4) gFS mȍ 26 S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Ciss ................800 Coss 380 pF pF Crss ...............133 pF . (VDS = 24 V, ID = 20 A, Qg 17 ... VGS = 5 V) (Note 5) Qgs 3 ... nC nC Qgd ..................10 ... nC Gate-to-Drain (“Miller”) Charge Resistive Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time (VDS = 15 V, ID = 20 A, VGS = 10 V, RG = 3.3ȍ) (Note 5) td(on) 7.2 trise 60 td(off) 22.5 tfall 10 ns ns .. ns .................. ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode) IS 40 A Integral pn-diode in MOSFET Pulse Source Current (Body Diode) ISM 170 A 1.3 V Diode Forward On-Voltage (IS = 40 A, VGS = 0 V) VSD Reverse Recovery Time (IF = 40A, VGS = 0 V, trr 55 ns di/dt = 100A/µs) Qrr 110 nC Reverse Recovery Charge ........................ Note 1: TJ = +25к to 150к Note 2: Repetitive rating; pulse width limited by maximum junction temperature. Note 3: ISD = 12.0A, di/dt 100A/µs, VDD BVDSS, TJ = +150к Note 4: Pulse width 250µs; duty cycle 2% Note 5: Essentially independent of operating temerpature. Page 2 IRF40N03 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 40 40 25 C 35 I D , Drain C urrent (A) V G S =10,9,8,7,6,5V I D , Drain C urrent (A) 30 25 V G S =4V 20 15 10 30 T j=125 C 20 10 -55 C 5 0 0 0 0.5 1 1.5 2 2.5 1 2 V DS , Drain-to-S ource Voltage (V ) 5 6 1.3 R DS (ON) , Normalized Drain-S ource, On-R es is tance 3000 2400 1800 C is s 1200 C os s 600 C rs s 0 V G S =10V 1.2 T j=125 C 1.1 5 10 15 20 25 -55 C 0.9 0.8 30 0 10 V DS , Drain-to S ource Voltage (V ) B V DS S , Normalized Drain-S ource B reakdown V oltage V DS =V G S I D =250uA 1.05 1.00 0.95 0.90 0.85 0 25 50 75 30 40 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 1.15 0.80 -50 -25 20 I D , Drain C urrent(A) F igure 3. C apacitance 1.10 6 25 C 1.0 0.7 0 V th, Normalized G ate-S ource T hres hold V oltage 4 F igure 2. Trans fer C haracteris tics 3600 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 60 40 V DS =10V 50 Is , S ource-drain current (A) gF S , T rans conductance (S ) 3 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics C , C apacitance (pF ) 0 3 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent V S D , B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent Page 3 IRF40N03 ! 300 200 100 10 1m I D , Drain C urrent (A) V DS =10V I D =40A 8 6 4 2 0 5 10 15 20 25 30 35 RD 10 S (O N) L im 10 10 0m 1s s ms s V G S =10V S ingle P ulse T c=25 C 0.5 0.1 40 it DC 1 0 1 10 30 60 V DS , Drain-S ource V oltage (V ) Qg, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge V DD ton D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL V IN 10% INVE R TE D 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit 2 r(t),Normalized E ffective T ransient T hermal Impedance 6 V G S , G ate to S ource V oltage (V ) POWER MOSFET 1 D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve Page 4