ETC P2804ND5G

NIKO-SEM
P2804ND5G
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
TO-252-5
Lead-Free
PRODUCT SUMMARY
N-Channel
40
28mΩ
7A
P-Channel
-40
55mΩ
-5.5A
D2
G1
G2
S1
G : GATE
D : DRAIN
S : SOURCE
S1 G1
ID
D1/D2
RDS(ON)
S2 G2
D1
V(BR)DSS
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
N-Channel P-Channel
UNITS
Drain-Source Voltage
VDS
40
-40
V
Gate-Source Voltage
VGS
±20
±20
V
7
-5.5
6
-4.5
50
-50
TC = 25 °C
Continuous Drain Current
ID
TC = 70 °C
Pulsed Drain Current
1
IDM
TC = 25 °C
Power Dissipation
3
PD
TC = 70 °C
W
2.1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
1
TL
275
Lead Temperature ( /16” from case for 10 sec.)
A
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
RθJC
6
°C / W
Junction-to-Ambient
RθJA
42
°C / W
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
UNIT
TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS = 0V, ID = 250µA
N-Ch
40
VGS = 0V, ID = -250µA
P-Ch
-40
VDS = VGS, ID = 250µA
N-Ch
1.0
1.5
2.5
P-Ch
-1.0
-1.5
-2.5
V(BR)DSS
VGS(th)
VDS = VGS, ID = -250µA
Gate-Body Leakage
VDS = 0V, VGS = ±20V
N-Ch
±100
VDS = 0V, VGS = ±20V
P-Ch
±100
IGSS
1
V
nA
Apr-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
VDS = 32V, VGS = 0V
IDSS
1
P-Ch
-1
VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch
10
P-Ch
-10
VDS = -30V, VGS = 0V, TJ = 55 °C
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
On-State
N-Ch
50
P-Ch
-50
A
30
42
P-Ch
65
94
N-Ch
21
28
P-Ch
38
55
N-Ch
19
P-Ch
11
N-Ch
790
988
N-Channel
P-Ch
690
863
VGS = 0V, VDS = 10V, f = 1MHz
N-Ch
175
245
P-Channel
P-Ch
310
430
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
65
98
P-Ch
75
113
N-Channel
VDS = 0.5V(BR)DSS, VGS = 10V,
N-Ch
16
P-Ch
14
ID = 7A
N-Ch
2.5
P-Channel
P-Ch
2.2
VDS = 0.5V(BR)DSS, VGS = -10V,
N-Ch
2.1
ID = -5.5A
P-Ch
1.9
VGS = -4.5V, ID = -4.5A
mΩ
RDS(ON)
VGS = 10V, ID = 7A
VGS = -10V, ID = -5.5A
Forward Transconductance1
µA
N-Ch
VGS = 4.5V, ID = 6A
Drain-Source
Resistance1
TO-252-5
Lead-Free
N-Ch
VDS = -32V, VGS = 0V
Zero Gate Voltage Drain Current
P2804ND5G
gfs
VDS = 10V, ID = 7A
VDS = -10V, ID = -5.5A
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs
Gate-Drain Charge2
Qgd
2
pF
nC
Apr-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
Turn-On Delay Time2
Rise Time2
tr
Turn-Off Delay Time2
Fall Time2
N-Channel
td(on)
TO-252-5
Lead-Free
N-Ch
2.2
4.4
P-Ch
6.7
13.4
VDS = 20V
N-Ch
7.5
15
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
P-Ch
9.7
19.4
N-Ch
11.8
21.3
P-Ch
19.8
35.6
VDS = -20V
N-Ch
3.7
7.4
ID ≅ -1A, VGS = -10V, RGEN = 6Ω
P-Ch
12.3
22.2
P-Channel
td(off)
tf
P2804ND5G
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Forward Voltage1
IF = 7A, VGS = 0V
VSD
IF = -5.5A, VGS = 0V
IF = 8A, dlF/dt = 100A / µS
Reverse Recovery Time
trr
IF = -7A, dlF/dt = 100A / µS
Reverse Recovery Charge
Qrr
N-Ch
1.2
P-Ch
-1.2
N-Ch
42
P-Ch
55
N-Ch
30
P-Ch
52
V
nS
nC
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
1
2
REMARK: THE PRODUCT MARKED WITH “P2804ND5G”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
3
Apr-18-2005
NIKO-SEM
P2804ND5G
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
TO-252-5
Lead-Free
N-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V GS = 0V
T A = 125° C
Is - Reverse Drain Current(A)
10
25°C
1
-55° C
0.1
0.01
0.001
0
4
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage(V)
1.2
1.4
Apr-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
5
P2804ND5G
TO-252-5
Lead-Free
Apr-18-2005
NIKO-SEM
P2804ND5G
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
TO-252-5
Lead-Free
P-CHANNEL
-Is - Reverse Drain Current(A)
100
V GS = 0V
10
1
0.1
25° C -55° C
0.01
0.001
0
6
T A = 125° C
0.8
1.0
1.2
0.2
0.6
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
Apr-18-2005
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
7
P2804ND5G
TO-252-5
Lead-Free
Apr-18-2005
NIKO-SEM
P2804ND5G
N- & P-Channel Enhancement Mode
Field Effect Transistor_Preliminary
TO-252-5
Lead-Free
TO-252-5 (DPAK) MECHANICAL DATA
mm
mm
Dimension
Dimension
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.0
9.5
10.0
H
1.3
1.5
1.7
B
2.1
2.3
2.5
I
6.3
6.5
6.7
C
0.4
0.5
0.6
J
4.8
5.0
5.2
D
1.1
1.2
1.3
K
0.8
1.3
1.8
E
0.4
0.5
0.6
L
0.3
0.5
0.7
F
0.00
0.3
M
1.1
1.3
1.5
G
5.3
5.7
N
5.5
G
J
I
M
L
H
D
E
C
F
B
A
K
8
Apr-18-2005