NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free PRODUCT SUMMARY N-Channel 40 28mΩ 7A P-Channel -40 55mΩ -5.5A D2 G1 G2 S1 G : GATE D : DRAIN S : SOURCE S1 G1 ID D1/D2 RDS(ON) S2 G2 D1 V(BR)DSS S2 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS ±20 ±20 V 7 -5.5 6 -4.5 50 -50 TC = 25 °C Continuous Drain Current ID TC = 70 °C Pulsed Drain Current 1 IDM TC = 25 °C Power Dissipation 3 PD TC = 70 °C W 2.1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 1 TL 275 Lead Temperature ( /16” from case for 10 sec.) A °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJC 6 °C / W Junction-to-Ambient RθJA 42 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage VGS = 0V, ID = 250µA N-Ch 40 VGS = 0V, ID = -250µA P-Ch -40 VDS = VGS, ID = 250µA N-Ch 1.0 1.5 2.5 P-Ch -1.0 -1.5 -2.5 V(BR)DSS VGS(th) VDS = VGS, ID = -250µA Gate-Body Leakage VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 IGSS 1 V nA Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary VDS = 32V, VGS = 0V IDSS 1 P-Ch -1 VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 VDS = -30V, VGS = 0V, TJ = 55 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V On-State N-Ch 50 P-Ch -50 A 30 42 P-Ch 65 94 N-Ch 21 28 P-Ch 38 55 N-Ch 19 P-Ch 11 N-Ch 790 988 N-Channel P-Ch 690 863 VGS = 0V, VDS = 10V, f = 1MHz N-Ch 175 245 P-Channel P-Ch 310 430 VGS = 0V, VDS = -10V, f = 1MHz N-Ch 65 98 P-Ch 75 113 N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, N-Ch 16 P-Ch 14 ID = 7A N-Ch 2.5 P-Channel P-Ch 2.2 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 2.1 ID = -5.5A P-Ch 1.9 VGS = -4.5V, ID = -4.5A mΩ RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -5.5A Forward Transconductance1 µA N-Ch VGS = 4.5V, ID = 6A Drain-Source Resistance1 TO-252-5 Lead-Free N-Ch VDS = -32V, VGS = 0V Zero Gate Voltage Drain Current P2804ND5G gfs VDS = 10V, ID = 7A VDS = -10V, ID = -5.5A S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge2 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd 2 pF nC Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary Turn-On Delay Time2 Rise Time2 tr Turn-Off Delay Time2 Fall Time2 N-Channel td(on) TO-252-5 Lead-Free N-Ch 2.2 4.4 P-Ch 6.7 13.4 VDS = 20V N-Ch 7.5 15 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Ch 9.7 19.4 N-Ch 11.8 21.3 P-Ch 19.8 35.6 VDS = -20V N-Ch 3.7 7.4 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 12.3 22.2 P-Channel td(off) tf P2804ND5G nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Forward Voltage1 IF = 7A, VGS = 0V VSD IF = -5.5A, VGS = 0V IF = 8A, dlF/dt = 100A / µS Reverse Recovery Time trr IF = -7A, dlF/dt = 100A / µS Reverse Recovery Charge Qrr N-Ch 1.2 P-Ch -1.2 N-Ch 42 P-Ch 55 N-Ch 30 P-Ch 52 V nS nC Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THE PRODUCT MARKED WITH “P2804ND5G”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 Apr-18-2005 NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 25°C 1 -55° C 0.1 0.01 0.001 0 4 0.2 0.6 0.8 1.0 0.4 VSD - Body Diode Forward Voltage(V) 1.2 1.4 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary 5 P2804ND5G TO-252-5 Lead-Free Apr-18-2005 NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free P-CHANNEL -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 25° C -55° C 0.01 0.001 0 6 T A = 125° C 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 Apr-18-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary 7 P2804ND5G TO-252-5 Lead-Free Apr-18-2005 NIKO-SEM P2804ND5G N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary TO-252-5 Lead-Free TO-252-5 (DPAK) MECHANICAL DATA mm mm Dimension Dimension Min. Typ. Max. Min. Typ. Max. A 9.0 9.5 10.0 H 1.3 1.5 1.7 B 2.1 2.3 2.5 I 6.3 6.5 6.7 C 0.4 0.5 0.6 J 4.8 5.0 5.2 D 1.1 1.2 1.3 K 0.8 1.3 1.8 E 0.4 0.5 0.6 L 0.3 0.5 0.7 F 0.00 0.3 M 1.1 1.3 1.5 G 5.3 5.7 N 5.5 G J I M L H D E C F B A K 8 Apr-18-2005