ISC6053AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit：mm 1.5 ISC6053AU1 is a silicon NPN epitaxial type transistor Designed with high collector current, low VCE(sat). 0.32 0.5 0.22 ① ② ③ 0～0.1 0.7 ●High collector current IC（MAX）=650mA ●Low collector to emitter saturation voltage VCE（sat）<0.5Vmax 0.35 0.12 FEATURE 0.8 0.55 0.5 1.7 1.0 0.35 APPLICATION For switching application, small type motor drive application. TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR JEITA：SC-75A JEDEC： － MAXIMUM RATINGS（Ta=25℃） Symbol VCEO VCBO VEBO IC PC Tj Tstg Parameter Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings 20 25 4 650 150 150 -55～150 Unit V V V mA mW ℃ ℃ MARKING hFE ITEM Type Name ・ BG ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE※ VCE（sat） fT Parameter Test condition C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product *：It shows hFE classification in below table. Min 20 25 4 － － 150 － － IC=100uA, IB=0 IC=10uA, IE=0 IE=10uA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=4V,IC=100mA IC=500mA, IB=25mA VCE=6V,IE=-10mA, Limits Typ － － － － － － 0.3 290 Max － － － 1 1 800 0.5 － Unit V V V uA uA － V MHz ITEM E F G hFE 150～300 250～500 400～800 ISAHAYA ELECTRONICS CORPORATION ISC6053AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 200 10000 DC FORWARD CURRENT GAIN hFE(-) COLLECTOR DISSIPATION Pc(mW) VCE=4V 150 100 50 85℃ 1000 25℃ 100 -40℃ 10 0 0 50 100 1 150 10 1000 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta(℃) COMMON EMITTER TRANSFER(2) COMMON EMITTER TRANSFER(1) 10 700 VCE=4V VCE=4V 600 500 25℃ 400 85℃ 8 85℃ COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 100 300 -40℃ 200 25℃ 6 4 -40℃ 2 100 0 0 0 0.2 0.4 0.6 0.8 1 0 1.2 0.2 0.4 BASE TO EMITTER VOLTAGE VBE (V) 0.8 1 1.2 COMMON EMITTER OUTPUT(2) COMMON EMITTER OUTPUT(1) 400 800 IB=1.0mA IB=9mA IB=10mA 700 IB=8mA Ta=25℃ IB=7mA IB=6mA IB=0.8mA IB=0.7mA 600 500 IB=5mA IB=4mA 400 Ta=25℃ IB=0.9mA 350 COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 0.6 BASE TO EMITTER VOLTAGE VBE (V) IB=3mA IB=2mA 300 IB=1mA 200 IB=0.6mA 300 IB=0.5mA 250 IB=0.4mA IB=0.3mA 200 IB=0.2mA 150 100 IB=0.1mA 50 IB=0mA 100 IB=0mA 0 0 0 1 2 3 4 COLLECTOR TO EMITTER VOLTAGE VCE(V) 5 0 5 10 15 COLLECTOR TO EMITTER VOLTAGE VCE(V) ISAHAYA ELECTRONICS CORPORATION 20 ISC6053AU1 PRELIMINARY ※This datasheet is possibility of change. Because this device is developing now. FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 500 1000 GAIN BAND WIDTH PRODUCT fT(MHz) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) IC/IB=20 100 85℃ 25℃ 400 Ta=25℃ VCE=6V 300 200 100 -40℃ 0 10 1 10 100 COLLECTOR CURRENT IC(mA) 1000 -0.1 -1 -10 EMITTER CURRENT IE(mA) ISAHAYA ELECTRONICS CORPORATION -100 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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