2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor designed with high collector current, low VCE（sat）. Unit：mm 2.5 0.5 1.5 0.5 0.95 2.90 FEATURE 1.90 0.95 0.4 ① ●High collector current IC（MAX）=-500mA ●Low collector to emitter saturation voltage VCE（sat）<-0.4Vmax(IC=-150mA、IB=-15mA） ③ 0.16 0～0.1 0.8 1.1 ② APPLICATION For switching application, small type motor drive application. MAXIMUM RATINGS（Ta=25℃） 記 号 VCEO VCBO VEBO IC PC Tj Tstg 項 目 Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature 定 格 値 -60 -60 -5 -500 200 150 -55～150 単 位 V V V mA mW ℃ ℃ Notice: The dimension without tolerance represent central value. TERMINAL CONNECTOR ①：BASE EIAJ：SC-59 ②：EMITTER JEDEC：TO-236 ③：COLLECTOR Resemblance MARKING Type Name A ・W ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE VCE（sat） VBE（sat） fT Cob Parameter C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance Test condition IC=-1mA、IB=0 IC=-10uA、IE=0 IE=-10uA、IC=0 VCB=-50V、IE=0 VEB=-3V、IC=0 IC=-150mA、VCE=-10V IC=-150mA、IB=-15mA IC=-150mA、IB=-15mA IE=50mA、VCE=-20V、f=100MHz VCB=-10V、f=1MHz Min -60 -60 -5 100 Limits Typ -100 -100 300 -0.4 -1.3 200 ISAHAYA ELECTRONICS CORPORATION Unit Max 8 V V V nA nA --V V MHz pF 20050621 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COMMON EMITTER OUTPUT COMMON EMITTER OUTPUT -150 -150 -130 -120 COLLECTOR CURRENT IC[mA] -130 COLLECTOR CURRENT IC[mA] Ta=-25℃ -140 Ta=-40℃ -140 IB=-0.6mA -110 -100 IB=-0.5mA -90 -80 IB=-0.4mA -70 -60 IB=-0.3mA -50 -40 IB=-0.2mA -30 IB=-0.6mA -120 -110 IB=-0.5mA -100 -90 IB=-0.4mA -80 -70 IB=-0.3mA -60 -50 IB=-0.2mA -40 -30 -20 IB=-0.1mA -20 IB=-0.1mA -10 IB=0A -10 IB=0A -0 -0 -0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE[V] -0 -10 COMMON EMITTER OUTPUT -150 Ta=25℃ -140 Ta=75℃ -140 IB=-0.6mA -130 -130 IB=-0.5mA -120 -110 COLLECTOR CURRENT IC[mA] COLLECTOR CURRENT IC[mA] -10 COMMON EMITTER OUTPUT -150 IB=-0.4mA -100 -90 IB=-0.3mA -80 -70 -60 IB=-0.2mA -50 -40 -30 IB=-0.1mA -20 IB=-0.5mA IB=-0.6mA -120 IB=-0.4mA -110 -100 IB=-0.3mA -90 -80 -70 IB=-0.2mA -60 -50 -40 IB=-0.1mA -30 -20 -10 -10 IB=0A -0 IB=0A -0 -0 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE[V] -0 -10 エミッタ接地出力特性 IB=-0.6mA -130 COLLECTOR CURRENT IC[mA] IB=-0.3mA -90 -80 IB=-0.2mA -60 -50 -40 Ta=100℃ Ta=75℃ -110 -70 VCE=-10V -90 IB=-0.4mA -120 -100 -10 -100 IB=-0.5mA Ta=100℃ -140 -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE[V] COMMON EMITTER TRANSFER -150 コレクタ電流 IC[mA] -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE[V] IB=-0.1mA -30 -20 -80 Ta=25℃ -70 Ta=-25℃ -60 -50 Ta=-40℃ -40 -30 -20 -10 -10 IB=0A -0 -0 -0 -2 -4 -6 -8 コレクタ・エミッタ間電圧 VCE[V] -10 -0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE[V] ISAHAYA ELECTRONICS CORPORATION -1 20050621 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DC FORWORD CURRENT GAIN VS. COLLECTOR CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 1000 -1000 Ta=100℃ VCE=-10V IC/IB=10/1 100 COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)[mV] FORWORD CURRENT GAIN hFE Ta=75℃ Ta=25℃ Ta=-25℃ Ta=-40℃ 10 Ta=75℃ Ta=25℃ -10 -1 -1 -10 -100 COLLECTOR CURRENT IC[mA] -1000 -1 BASE TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -10 -100 COLLECTOR CURRENT IC[mA] -1000 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT -10 400 Ta=25℃ VCE=-20V IC/IB=10/1 GAIN BAND WIDTH PRODUCT fT[MHz] BASE TO EMITTER SATURATION VOLTAGE VBE(sat)[V] Ta=-25℃ Ta=-40℃ 1 Ta=-40℃ -1 Ta=-25℃ Ta=25℃ Ta=75℃ Ta=100℃ -0.1 350 300 250 200 150 100 50 0 -1 -10 -100 COLLECTOR CURRENT IC[mA] -1000 1 COLLECTOR OUTPUT CAPATITANCE VS. COLLECTOR TO BASE VOLTAGE 1000 250 COLLECTOR DISSIPATION Pc[mW] Ta=25℃ IE=0A f=1MHz 10 1 0.1 -0.1 10 100 EMITTER CURRENT IE[mA] COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 100 COLLECTOR OUTPUT CAPACITANCE Cob[pF] Ta=100℃ -100 200 150 100 50 0 -1 -10 COLLECTOR TO BASE VOLTAGE VCB[V] -100 0 25 50 75 100 125 AMBIENT TEMPERATURE Ta[℃] ISAHAYA ELECTRONICS CORPORATION 150 20050621 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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