IXYS IXTA3N60P

IXTA 3N60P
IXTP 3N60P
IXTY 3N60P
PolarHVTM
Power MOSFET
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
600
600
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
3.0
6
A
A
IAR
EAR
EAS
TC = 25° C
TC = 25° C
TC = 25° C
3
10
100
A
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤150° C, RG = 30 Ω
5
V/ns
PD
TC = 25° C
70
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Weight
TO-220
TO-263
TO-252
4
3
0.35
g
g
g
= 600
= 3.0
≤ 2.9
V
A
Ω
TO-263 (IXTA)
G
S
(TAB)
TO-220 (IXTP)
G
D S
(TAB)
TO-252 (IXTY)
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 50 µA
3.0
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125° C
VGS = 10 V, ID = 0.5 ID25, Note 1
© 2006 IXYS All rights reserved
V
5.5
V
± 100
nA
5
50
µA
µA
2.9
Ω
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
DS99449E(04/06)
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = 0.5 ID25, Note 1
2.2
3.4
S
411
pF
44
pF
Crss
6.4
pF
td(on)
25
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
25
ns
td(off)
RG = 30 Ω (External)
58
ns
22
ns
9.8
nC
3.4
nC
3.5
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
TO-220 (IXTP) Outline
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
1.80° C/W
(TO-220)
Source-Drain Diode
° CW
0.25
Characteristic Values
TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
3
A
ISM
Repetitive
9
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 3 A, -di/dt = 100 A/µs
500
TO-252 (IXTY) Outline
ns
VR = 100 V, VGS = 0 V
Note 1: Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
TO-263 (IXTA) Outline
Pins: 1 - Gate
4 - Drain
Dim.
Millimeter
Min. Max.
3 - Source
Inches
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
3
6
VGS = 10V
2.7
2.4
4.5
I D - Amperes
I D - Amperes
8V
5
2.1
1.8
1.5
1.2
0.9
4
7V
3.5
3
2.5
2
1.5
6V
0.6
VGS = 10V
5.5
8V
7V
6V
1
0.3
0.5
0
0
0
1
2
3
4
5
6
7
8
9
0
10
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125ºC
3
3.1
VGS = 10V
2.7
R D S ( o n ) - Normalized
2.1
1.8
6V
1.5
1.2
0.9
0.6
5V
0.3
VGS = 10V
2.8
8V
7V
2.4
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
2.5
2.2
1.9
I D = 3A
1.6
1.3
I D = 1.5A
1
0.7
0.4
0
0
2
4
6
8
10
12
14
V D S - Volts
16
18
-50
20
-25
0
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
3
3.3
VGS = 10V
2.8
3
TJ = 125º C
2.6
2.7
2.4
2.4
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
2
1.8
1.6
1.4
2.1
1.8
1.5
1.2
0.9
1.2
0.6
TJ = 25º C
1
0.3
0.8
0
0
1
2
3
I D - Amperes
© 2006 IXYS All rights reserved
4
5
6
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
IXTA 3N60P IXTP 3N60P
IXTY 3N60P
Fig. 7. Input Adm ittance
Fig. 8. Transconductance
6
4.5
5.5
4
5
3.5
2.5
TJ =125º C
2
25º C
1.5
-40º C
25º C
4
g f s - Siemens
3
I D - Amperes
TJ = -40º C
4.5
125º C
3.5
3
2.5
2
1.5
1
1
0.5
0.5
0
0
4
4.5
5
5.5
6
6.5
0
7
0.5
1
1.5
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
10
8
9
6
VG S - Volts
I S - Amperes
7
5
4
TJ = 125º C
3
3.5
4
9
10
VDS = 300V
8
I D = 1.5A
7
I G = 10mA
6
5
4
3
2
2
TJ = 25º C
1
1
0
0
0.4
0.5
0.6
0.7
0.8
0
0.9
1
2
3
V S D - Volts
4
5
6
7
8
Q G - nanoCoulombs
Fig. 13. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10.0
1000
C iss
R( t h ) J C - ºC / W
Capacitance - picoFarads
2.5
Fig. 10. Gate Charge
9
3
2
I D - Amperes
100
C oss
10
1.0
C rss
f = 1MHz
1
0.1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
100
Pulse Width - milliseconds
1000