SHENZHENFREESCALE SQ1420EEH

SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg Tested
• Typical ESD Protection: 800 V
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
0.140
RDS(on) () at VGS = 4.5 V
0.200
ID (A)
1.6
Configuration
Single
SOT-363
SC-70 (6-LEADS)
D
6
1
D
D
5
2
D
3
G
4
D
S
9A
XX
YY
Marking Code
G
Lot Traceability
and Date Code
Part # Code
S
N-Channel MOSFET
Top View
ORDERING INFORMATION
Package
SC-70
Lead (Pb)-free and Halogen-free
SQ1420EEH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
1.6
1.6
IS
1.6
IDM
6.7
PD
UNIT
3.3
1.1
A
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
125
RthJF
45
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
1 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
60
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 12 V
-
-
± 500
nA
VDS = 0 V, VGS = ± 20 V
-
-
1
mA
1
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = 60 V
-
-
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
1
-
-
VGS = 10 V
ID = 1.2 A
-
0.100
0.140
VGS = 10 V
ID = 1.2 A, TJ = 125 °C
-
-
0.245
VGS = 10 V
ID = 1.2 A, TJ = 175 °C
-
-
0.308
VGS = 4.5 V
ID = 1 A
-
0.152
0.200
-
2.9
-
-
172
215
VDS = 15 V, ID = 1 A
V
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VDS = 25 V, f = 1 MHz
VGS = 4.5 V
VDS = 30 V, ID = 2.8 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 30 V, RL = 30 
ID  1 A, VGEN = 4.5 V, Rg = 1 
tf
-
36
45
-
24
30
-
2.7
4
-
0.7
-
-
1.4
-
1.1
1.6
2.1
-
12
18
pF
nC

-
21
32
-
8
12
-
7
11
-
-
6.7
A
-
0.8
1.2
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 0.8 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.005
10-3
0.004
IGSS - Gate Current (A)
0.003
T J = 25 °C
0.002
T J = 150 °C
10-5
10-6
T J = 25 °C
10-7
10-8
0.001
10-9
10-10
0.000
0
6
12
18
24
0
30
6
12
18
24
VGS - Gate-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
30
Gate Current vs. Gate-Source Voltage
1.0
1.4
VGS = 10 V thru 4 V
1.2
0.8
1.0
ID - Drain Current (A)
ID - Drain Current (A)
0.8
0.6
0.4
0.6
TC = 25 °C
0.4
0.2
0.2
VGS = 3 V
0.0
0.0
TC = 125 °C
TC = - 55 °C
0.0
0.4
0.8
1.2
1.6
2.0
0
VDS - Drain-to-Source Voltage (V)
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
6
Transfer Characteristics
Output Characteristics
5
0.50
4
0.40
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
IGSS - Gate Current (A)
10-4
TC = - 55 °C
3
TC = 25 °C
2
TC = 125 °C
0.30
0.20
VGS = 4.5 V
0.10
1
VGS = 10 V
0.00
0
0
0.2
0.4
0.6
ID - Drain Current (A)
Transconductance
3 / 12
0.8
1
0
0.2
0.4
0.6
ID - Drain Current (A)
0.8
1
On-Resistance vs. Drain Current
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
300
6
250
5
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
200
Ciss
150
100
Coss
50
ID = 2.8 A
VDS = 30 V
4
3
2
1
Crss
0
0
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
60
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
Capacitance
1
ID = 0.2 A
2.1
TJ = 150 °C
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.5
VGS = 10 V
1.7
VGS = 4.5 V
1.3
0.1
TJ = 25 °C
0.01
0.9
0.5
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
1.0
0.5
0.8
0.2
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
5
0.6
0.4
- 0.1
ID = 5 mA
- 0.4
TJ = 150 °C
ID = 250 μA
- 0.7
0.2
TJ = 25 °C
0.0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
4 / 12
- 1.0
- 50 - 25
0
25
50
75 100
TJ - Temperature (°C)
125
150
175
Threshold Voltage
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
76
72
68
64
60
- 50 - 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
100
IDM Limited
ID - Drain Current (A)
10
ID Limited
100 μs
1
1 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.01
10 ms
Limited by RDS(on)*
BVDSS Limited
100 ms, 1 s, 10 s, DC
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
5 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
1
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-Bb
e
e1
D
-Ac
A2 A
L
A1
7 / 12
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Single-Channel LITTLE FOOTR SC-70 6-Pin MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
EVALUATION BOARDS SINGLE SC70-6
The new single 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the single-channel version.
The evaluation board (EVB) measures 0.6 inches by
0.5 inches. The copper pad traces are the same as in Figure 2.
The board allows examination from the outer pins to 6-pin DIP
connections, permitting test sockets to be used in evaluation
testing. See Figure 3.
52 (mil)
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, ( www.freescale.net.cn ) for the basic
pad layout and dimensions. These pad patterns are sufficient
for the low to medium power applications for which this
package is intended. Increasing the drain pad pattern yields a
reduction in thermal resistance and is a preferred footprint.
The availability of four drain leads rather than the traditional
single drain lead allows a better thermal path from the package
to the PCB and external environment.
96 (mil)
6
5
4
1
2
3
71 (mil)
26 (mil)
13 (mil)
0, 0 (mil)
18 (mil)
26 (mil)
PIN-OUT
16 (mil)
Figure 1 shows the pin-out description and Pin 1
identification.The pin-out of this device allows the use of four
pins as drain leads, which helps to reduce on-resistance and
junction-to-ambient thermal resistance.
SOT-363
SC-70 (6-LEADS)
D
1
6
D
D
2
5
D
G
3
4
S
FIGURE 2.
SC-70 (6 leads) Single
The thermal performance of the single 6-pin SC-70 has been
measured on the EVB, comparing both the copper and
Alloy 42 leadframes. This test was first conducted on the
traditional Alloy 42 leadframe and was then repeated using the
1-inch2 PCB with dual-side copper coating.
Top View
FIGURE 1.
8 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Front of Board SC70-6
Back of Board SC70-6
vishay.com
FIGURE 3.
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(Package Performance)
COOPER LEADFRAME
Room Ambient 25 _C
The junction to foot thermal resistance is a useful method of
comparing different packages thermal performance.
A helpful way of presenting the thermal performance of the
6-Pin SC-70 copper leadframe device is to compare it to the
traditional Alloy 42 version.
Thermal performance for the 6-pin SC-70 measured as
junction-to-foot thermal resistance, where the “foot” is the
drain lead of the device at the bottom where it meets the PCB.
The junction-to-foot thermal resistance is typically 40_C/W in
the copper leadframe and 163_C/W in the Alloy 42 leadframe
— a four-fold improvement. This improved performance is
obtained by the enhanced thermal conductivity of copper over
Alloy 42.
The typical RqJA for the single 6-pin SC-70 with copper
leadframe is 103_C/W steady-state, compared with 212_C/W
for the Alloy 42 version. The figures are based on the 1-inch2
FR4 test board. The following example shows how the thermal
resistance impacts power dissipation for the two different
leadframes at varying ambient temperatures.
ALLOY 42 LEADFRAME
PD +
T J(max) * T A
Rq JA
Elevated Ambient 60 _C
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
212 CńW
o
o
P D + 150 Co* 25 C
212 CńW
P D + 590 mW
P D + 425 mW
9 / 12
T J(max) * T A
Rq JA
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
124 CńW
o
o
P D + 150 Co* 60 C
124 CńW
P D + 1.01 W
P D + 726 mW
As can be seen from the calculations above, the compact 6-pin
SC-70 copper leadframe LITTLE FOOT power MOSFET can
handle up to 1 W under the stated conditions.
Testing
To further aid comparison of copper and Alloy 42 leadframes,
Figure 5 illustrates single-channel 6-pin SC-70 thermal
performance on two different board sizes and two different pad
patterns. The measured steady-state values of RqJA for the
two leadframes are as follows:
LITTLE FOOT 6-PIN SC-70
Power Dissipation
Room Ambient 25 _C
PD +
Elevated Ambient 60 _C
1) Minimum recommended pad pattern on
the EVB board V (see Figure 3.
1-inch2
2) Industry standard
PCB with
maximum copper both sides.
Alloy 42
Copper
329.7_C/W
208.5_C/W
211.8_C/W
103.5_C/W
The results indicate that designers can reduce thermal
resistance (RqJA) by 36% simply by using the copper
leadframe device rather than the Alloy 42 version. In this
example, a 121_C/W reduction was achieved without an
increase in board area. If increasing in board size is feasible,
a further 105_C/W reduction could be obtained by utilizing a
1-inch2 square PCB area.
The copper leadframe versions have the following suffix:
Single:
Si14xxEDH
Dual:
Si19xxEDH
Complementary: Si15xxEDH
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SQ1420EEH
400
250
320
200
240
Thermal Resistance (C/W)
Thermal Resistance (C/W)
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Alloy
42
160
Copper
80
150
Alloy
42
100
50
Copper
0
0
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
10-5
10 / 12
Leadframe Comparison on EVB
10-3
10-2
10-1
1
10
100
1000
Time (Secs)
Time (Secs)
FIGURE 4.
10-4
FIGURE 5.
Leadframe Comparison on Alloy 42 1-inch2 PCB
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
11 / 12
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SQ1420EEH
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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