CMF10120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID(MAX) = 24 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits • • • = 160mΩ Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Part Number Package CMF10120D TO-247-3 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol ID Continuous Drain Current IDpulse Value 24 13 Unit A Test Conditions VGS@20V, TC = 25˚C A EAS Single Pulse Avalanche Energy 1.2 J ID = 10A, VDD = 50 V, L = 20 mH EAR Repetitive Avalanche Energy 0.8 J tAR limited by Tjmax IAR Repetitive Avalanche Current 10 A VGS Gate Source Voltage -5/+25 V Ptot Power Dissipation 134 W -55 to +135 ˚C ˚C TL Solder Temperature 260 Md Mounting Torque 1 8.8 CMF10120D Rev. A Fig. 10 Pulse width tP limited by Tjmax 49 Operating Junction and Storage Temperature Note VGS@20V, TC = 100˚C Pulsed Drain Current TJ , Tstg 1 Parameter TC = 25˚C Fig. 15 ID = 10A, VDD = 50 V, L = 15 mH tAR limited by Tjmax TC=25˚C 1.6mm (0.063”) from case for 10s Nm M3 or 6-32 screw lbf-in Fig. 9 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Transconductance Ciss Input Capacitance Coss Output Capacitance V 2.4 3.5 3.1 4.1 VGS = 0V, ID = 50μA VDS = VGS, ID = 0.5 mA VDS = VGS, ID = 1.0 mA VDS = VGS, ID = 0.5 mA, TJ = 135ºC 2.3 V VDS = VGS, ID = 1.0 mA, TJ = 135ºC 0.5 50 5 150 160 200 190 240 4.2 μA μA mΩ S 3.9 Fig. 11 VDS = 1200V, VGS = 0V VDS = 1200V, VGS = 0V, TJ = 135ºC VGS = 20V, VDS = 0V VGS = 20V, ID = 10A VGS = 20V, ID = 10A, TJ = 135ºC VDS= 20V, IDS= 10A VDS= 20V, IDS= 10A, TJ = 135ºC Fig. 3 Fig. 6 928 63 7.5 Eoss Coss Stored Energy 32 Turn-On Delay Time 8.8 Fall Time 21 Turn-Off Delay Time 38 trV Rise Time 34 RG Internal Gate Resistance td(off)V Note V Reverse Transfer Capacitance tfv V Test Conditions 1.8 Crss td(on)v Max. Unit 0.25 Drain-Source On-State Resistance gfs Typ. 1200 Gate Threshold Voltage IDSS RDS(on) Min. pF VGS = 0V VDS = 800V Fig. 13 f = 1MHz μJ VAC = 25mV Fig 14 VDD = 800V, VGS = 0/20V ns ID = 10A RG(ext) = 2.5Ω, RL = 40Ω fig. 17 Timing relative to VDS 13.6 Ω f = 1MHz, VAC = 25mV Built-in SiC Body Diode Characteristics Symbol Parameter VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Peak Reverse Recovery Current Typ. Max. Unit 3.5 V 3.1 138 ns 94 nC 1.57 A Test Conditions Note VGS = -5V, IF=5A, TJ = 25ºC VGS = -2V, IF=5A, TJ = 25ºC VGS = -5V, IF=10A, TJ = 25ºC VR = 800V, diF/dt= 100A/μs Fig. 22 Thermal Characteristics Symbol Parameter Typ. Max. RθJC Thermal Resistance from Junction to Case 0.66 0.82 RθCS Case to Sink, w/ Thermal Compound 0.25 RθJA Thermal Resistance From Junction to Ambient Unit Test Conditions K/W Note Fig. 7 40 Gate Charge Characteristics Symbol 2 Parameter Typ. Qgs Gate to Source Charge 11.8 Qgd Gate to Drain Charge 21.5 Qg Gate Charge Total 47.1 CMF10120D Rev. A Max. Unit nC Test Conditions VDD = 800V, VGS = 0/20V ID =10A Per JEDEC24 pg 27 Note Fig.12 50 50 45 45 40 40 35 35 30 30 ID (A) ID (A) Typical Performance 25 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 VDS (V) 6 7 8 9 10 11 12 VDS (V) Figure 1. Typical Output Characteristics TJ = 25ºC Figure 2. Typical Output Characteristics TJ = 135ºC 350 2 VGS = 20 V 1.8 300 1.6 VGS = 20 V 250 RDS(on) (mΩ) Normalized RDS(on) 1.4 1.2 1 0.8 0.6 200 135oC 25oC 150 100 0.4 50 0.2 0 0 0 25 50 75 100 125 0 150 5 10 15 20 Figure 3. Normalized On-Resistance vs. Temperature 40 45 50 18 20 VD = 20 V 25 600 TJ = 25oC 20 500 ID = 10 A ID (A) RDS(on) (mΩ) 35 30 700 400 300 135oC 15 10 25oC TJ = 135oC 5 100 0 0 10 12 14 16 18 VGS (V) Figure 5. On-Resistance vs. Gate Voltage 3 30 Figure 4. On-Resistance vs. Drain Current 800 200 25 ID (A) TJ (oC) CMF10120D Rev. A 20 0 2 4 6 8 10 12 14 16 VGS (V) Figure 6. Typical Transfer Characteristics Typical Performance 1 100 DC: tp ≤ 1 µs 0.5 0.3 tp = 10 µs Limited by RDS(on) 100E-3 0.1 10 tp = 100 µs ID (A) ZthJC (oC/W) 0.05 0.02 10E-3 0.01 tp = 1 ms 1 tp = 10 ms 1E-3 SinglePulse DC 0.1 100E-6 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 1 10 100 1000 VDS (V) tp (s) Figure 7. Transient Thermal Impedance (Junction - Case) with Duty Cycle Figure 8. Safe Operating Area 160 25 140 20 120 ID (A) PD (W) 100 80 15 10 60 40 5 20 0 0 0 25 50 75 100 125 150 0 25 50 75 TC (oC) 100 125 150 TC (oC) Figure 9. Power Dissipation Derating Curve Figure 10. Continuous Current Derating Curve 4.5 25 4 20 ID = 1 mA 3.5 15 VGS (V) VGS(th) (V) 3 2.5 2 ID = 0.5 mA 1.5 10 ID = 10 A VDD = 800 V 5 1 0 0.5 0 -75 -50 -25 0 25 50 TJ 75 100 125 Figure 11. Gate Threshold Voltage vs. Temperature 4 CMF10120D Rev. A -5 150 (oC) 0 10 20 30 40 50 Gate Charge (nC) Figure 12. Typical Gate Charge Characteristics (25°C) Typical Performance 10000 10000 1000 Capacitance (pF) Capacitance (pF) Ciss Ciss 1000 Coss 100 Crss Coss 100 10 Crss 10 1 1 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 VDS (V) 500 600 700 800 VDS (V) Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz 40 11 VGS = 0/20V VDD = 50V L = 20 mH EAS = 1.2 J 10 9 30 8 2000 7 ID (A) 25 Eoss (µJ) 2500 VDS 20 15 ID 6 1500 5 4 1000 3 10 2 5 0 500 1 0 0 100 200 300 400 500 600 700 0 800 0.001 0.002 0.003 0.004 0 0.006 0.005 Time (sec) VDS (V) Figure 15. Typical Unclamped Inductive Switching Waveforms Showing Avalanche Capability Figure 14. Typical COSS Stored Energy 80 90 70 tD(off)v VGS = 0/20V VDD = 400V RL = 40 Ω ID = 10 A TA = 25oC 60 80 60 50 trv 40 tfv tD(off)v VGS = 0/20V VDD =800V RL = 80 Ω ID = 10 A TA = 25oC 70 Time (nsec) Time (nsec) VDS (V) 35 trv tfv 50 40 30 30 20 10 10 0 0 0 5 10 15 20 25 0 External Gate Resistor (Ω) Figure 16. Resistive Switching Times vs. External RG at VDD = 400V, ID = 10A 5 tD(on)v 20 tD(on)v CMF10120D Rev. A 5 10 15 20 External Gate Resistor (Ω) Figure 17. Resistive Switching Times vs. External RG at VDD = 800V, ID = 10A 25 Typical Performance 350 450 400 VGS = 0/20V RG = 15 Ω Tot VDD = 800V L = 856 µH FWD: C4D05120A TA = 25oC 250 200 ETOT,SW 150 EOFF 100 EON 300 EON 250 200 150 EOFF 100 50 0 ETOT,SW 350 Switching Energy (µJ) Switching Energy (µJ) 300 VGS = 0/20V RG = 20 Ω Tot VDD = 800V L = 856 µH FWD: C4D05120A ID = 10 A 50 0 4 5 6 7 8 9 10 11 0 25 50 Peak Drain Current (A) 75 Figure 18. Clamped Inductive Switching Energy vs. Drain Current (Fig. 20) C4D05120A 5A, 1200V SiC Schottky + 800V 42.3μf - CMF10120D Figure 20. Clamped Inductive Switching Waveform Test Circuit VDS 90% 10% td(on)v tfv ton td(off)v trv toff Figure 21. Switching Test Waveforms for Transition times 6 CMF10120D Rev. A 125 150 Figure 19. Clamped Inductive Switching Energy vs. Junction Temperature (Fig 20) 856μH VGS 100 TJ (oC) Test Circuit Diagrams and Waveforms trr Qrr= id dt tx ∫ trr Ic 856μH tx CMF10120D 10% Irr 10% Vcc + Vcc Vpk 800V Irr 42.3μf - Diode Recovery Waveforms CMF10120D t2 Erec= id dt t1 ∫ Diode Reverse Recovery Energy t1 Fig 22. Body Diode Recovery Test t2 Fig 23. Body Diode Recovery Waveform EA = 1/2L x ID2 FOR OFFICIAL USE ONLY – Not Cleared for Open Release FOR OFFICIAL USE ONLY – Not Cleared for Open Release Fig 24. Unclamped Inductive Switching Test Circuit Fig 25. Unclamped Inductive Switching waveform for Avalanche Energy ESD Ratings 7 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1000V 2 (>2000V) ESD-MM All Devices Passed 400V C (>400V) ESD-CDM All Devices Passed 1000V IV (>1000V) CMF10120D Rev. A Package Dimensions Package TO-247-3 POS X Z W Inches Min Max Min Max A .605 .635 15.367 16.130 B .800 .831 20.320 21.10 C .780 .800 19.810 20.320 D .095 .133 2.413 3.380 E .046 .052 1.168 1.321 F .060 .095 1.524 2.410 G Y BB AA CC (2) (1) (3) Millimeters .215 TYP 5.460 TYP H .175 .205 4.450 5.210 J .075 .085 1.910 2.160 K 6˚ 21˚ 6˚ 21˚ L 4˚ 6˚ 4˚ 6˚ M 2˚ 4˚ 2˚ 4˚ N 2˚ 4˚ 2˚ 4˚ P .090 .100 2.286 2.540 Q .020 .030 .508 .762 R 9˚ 11˚ 9˚ 11˚ S 9˚ 11˚ 9˚ 11˚ T 2˚ 8˚ 2˚ 8˚ U 2˚ 8˚ 2˚ 8˚ V .137 .144 3.487 3.658 W .210 .248 5.334 6.300 X .502 .557 12.751 14.150 Y .637 .695 16.180 17.653 Z .038 .052 0.964 1.321 AA .110 .140 2.794 3.556 BB .030 .046 0.766 1.168 CC .161 .176 4.100 4.472 Recommended Solder Pad Layout Part Number Package Marking CMF10120D TO-247-3 CMF10120 TO-247-3 “The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (alsosensitive, referred to persistent as the threshold limits) permitted for suchpersistent substances,organic or are used in an exempted in accordance with EU Directive “The levels of environmentally biologically toxic (PBT), pollutants (POP), application, or otherwise restricted materials in 2002/95/EC the below restriction the use of certain hazardousvalues substances in referred electrical and electronic equipmentlimits) (RoHS), as amended April 21, 2006.or are used in an this productonare theofmaximum concentration (also to as the threshold permitted forthrough such substances, exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006.” This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. 8 CMF10120D Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Cree, Inc.: CMF10120D