CAS325M12HM2 VDS1.2 kV 1.2kV, 3.6 mΩ All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-RecTM Diode Features • • • • • • • • • Esw, Total @ 600V, 300A 9.3 mJ RDS(on) 3.6 mΩ Package Ultra Low Loss, Low (5 nH) Inductance Ultra-Fast Switching Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation AlSiC Baseplate and Si3N4 AMB Substrate Ease of Paralleling High Temperature Packaging, TJ(max) = 175 °C AS9100 / ISO9001 Certified Manufacturing 65mm x 110mm x 10mm System Benefits • • • • Enables Compact, Lightweight Systems High Efficiency Operation Reduced Thermal Requirements Reduced System Cost Applications • • • High-Efficiency Converters / Inverters Motor & Traction Drives Smart-Grid / Grid-Tied Distributed Generation Part Number Package Marking CAS325M12HM2 Half-Bridge Module CAS325M12HM2 Test Conditions Notes Maximum Ratings (TC = 25˚C unless otherwise specified) v. -, 05-2016 25M12HM2, Re Datasheet: CAS3 Symbol Parameter VDSmax Drain - Source Voltage VGSmax Gate - Source Voltage, Maxium values VGSop Gate - Source Voltage, Recommended Operation values ID TJmax TC ,TSTG Continuous Drain Current Junction Temperature Case and Storage Temperature Range Visol Case Isolation Voltage PD Power Dissipation Value Unit 1.2 kV -5/+25 -5/+23 -5/+20 V V -5/+18 444 256 TJ = -55 to 150 °C TJ = -55 to 175 °C TJ = -55 to 150 °C TJ = -55 to 175 °C A TC = 25 ˚C TJ = 175 °C TC = 125˚C, TJ = 175 °C 175 ˚C -55 to +175 ˚C 1.2 kV AC, 50 Hz , 1 min 3000 W TC = 25 ˚C, TJ = 175 ˚C Subject to change without notice. www.cree.com Fig. 24 Fig. 23 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage Min. Typ. Max. 1.2 2.6 4 2.0 IDSS Zero Gate Voltage Drain Current Gate-Source Leakage Current 720 Note On State Resistance Input Capacitance 19.5 Coss Output Capacitance 1.54 Crss Reverse Transfer Capacitance 0.10 Eon Turn-On Switching Energy 5.6 EOff Turn-Off Switching Energy 3.7 QGS Gate-Source Charge 322 QGD Gate-Drain Charge 350 QG Total Gate Charge 1127 VDS =VGS, ID= 105 mA, TJ = 175 ˚C μA VDS = 1.2 kV, VGS = -5 V 3.5 nA VGS = 20 V, VDS = 0 V 4.3 VGS = 20 V, IDS = 400 A mΩ 7.6 Ciss VDS =VGS, ID= 105 mA V 2000 3.6 RDS(on) Test Conditions kV 2.0 IGSS Unit Fig. 3 VGS = 18 V, IDS = 400 A, TJ = 175 ˚C nF VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV Fig. 11, 12 mJ VDD = 600 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2Ω Note: IEC 60747-8-4 Definitions Fig. 13, 14 nC VDS= 800 V, VGS = -5V/+20V, ID= 350 A, Per IEC 60747-8-4 Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter VSD Diode Forward Voltage QC Total Capacitive Charge Min. Typ. Max. 1.7 2.0 2.5 2.8 4.3 Unit Test Conditions Note IF = 350 A, VGS = -5 V V IF = 350 A, TJ = 175 ˚C, VGS = -5 V μC Includes Schottky & Body diodes Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.085 0.100 0.115 RthJCD Thermal Resistance Juction-to-Case for Diode 0.094 0.110 0.127 Unit Test Conditions Fig. 18,19 ˚C/W Additional Module Data Symbol 2 Parameter W Weight M Mounting Torque LCE Loop Inductance CAS325M12HM2, Rev. -, 05-2016 Min. Typ. Max. 140 Test Condtion g 0.9 1.1 1.3 3 4.5 5 5 Unit Nm nH Note Power Terminals, M4 Bolts Baseplate, M6 Bolts Typical Performance 3 Figure 1. Typical Output Characteristics TJ = 25 ˚C Figure 2. Typical Output Characteristics TJ = 125 ˚C Figure 3. Typical Output Characteristics TJ = 150 ˚C Figure 3. Typical Output Characteristics TJ = 175 ˚C Figure 5. On-Resistance vs. Temperature for Various Gate-Source Voltage Figure 6. Antiparallel Diode Characteristic, VGS = -5 V CAS325M12HM2, Rev. -, 05-2016 Typical Performance 4 Figure 7. 3rd Quadrant Characteristic at 25 ˚C Figure 8. 3rd Quadrant Characteristic at 125 ˚C Figure 9. 3rd Quadrant Characteristic at 150 ˚C Figure 10. 3rd Quadrant Characteristic at 175 ˚C Figure 11. Typical Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 12. Typical Capacitances vs. Drain-Source Voltage (0 - 1 kV) CAS325M12HM2, Rev. -, 05-2016 Typical Performance 5 Figure 13. Inductive Switching Energy vs. Drain Current For VDD = 600V, RG = 2 Ω Figure 14. Inductive Switching Energy vs. Drain Current For VDD = 800V, RG = 2 Ω Figure 15. Inductive Switching Energy vs. Gate Resistance, IDS = 300A Figure 16. Maximum Power Dissipation (MOSFET) Derating Per Switch Position vs Case Temperature Figure 17. Continous Drain Current Derating vs Case Temperature Figure 18. MOSFET Junction to Case Thermal Impedance CAS325M12HM2, Rev. -, 05-2016 Typical Performance Figure 19. Diode Junction to Case Thermal Impedance Package Dimensions (mm) CAS325M12HM2 Unspecified Dimensions .XX = ± 0.3 mm 6 CAS325M12HM2, Rev. -, 05-2016 Important Notes • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. The module utilizes the ESQT-105-02-G-D-XXX family of elevated socket connectors from Samtec, available in varying height according to the customer’s preference Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit Some values were obtained from the CPM2-1200-0025B and CPW5-1200-Z050B device datasheet. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection. • • • • • Copyright © 2014 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 7 CAS325M12HM2 Rev. -, 05-2016 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power