ETC NTHD4401P/D

NTHD4401P
Power MOSFET
20 V, Dual P−Channel, 2.1 A,
ChipFET
Features
• Low RDS(on) and Fast Switching Speed in a ChipFET Package
• Leadless ChipFET Package 40% Smaller Footprint than TSOP−6
• ChipFET Package with Excellent Thermal Capabilities where Heat
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Transfer is Required
V(BR)DSS
• Lead (Pb) Free Version Available
ID MAX
130 m @ −4.5 V
Applications
−20 V
• Charge Control in Battery Chargers
• Optimized for Battery and Load Management Applications in
•
•
RDS(on) TYP
−2.1 A
200 m @ −2.5 V
S1
Portable Equipment
MP3 Players, Cell Phones, Digital Cameras, PDAs
Buck and Boost DC−DC Converters
S2
G1
G2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
Power Dissi
Dissipation
ation
(Note 1)
Steady
State
TA = 25°C
Pulsed Drain Current
TA = 85°C
TA = 85°C
tp = 10 s
Symbol
Value
Unit
VDSS
−20
V
VGS
12
V
D2
P−Channel MOSFET
−2.1
ID
−1.5
A
1.1
PD
ChipFET
CASE 1206A
Style 2
W
0.6
IDM
−7.0
A
TJ, Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
−2.1
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
D1
P−Channel MOSFET
MARKING
DIAGRAM
PIN
CONNECTIONS
8
1
S1
1
8
D1
7
2
G1
2
7
D2
6
3
S2
3
6
D2
5
4
G2
4
5
THERMAL RESISTANCE RATINGS
Rating
Symbol
Value
Unit
Junction−to−Ambient − Steady State (Note 1)
RJA
110
°C/W
1. Surface−mounted on FR4 board using 1″ sq. pad size (Cu. area = 1.127″ sq.
[1 oz.] including traces).
C4
D1
C4 = Specific Device Code
ORDERING INFORMATION
Package
Shipping†
NTHD4401PT1
ChipFET
3000/Tape & Reel
NTHD4401PT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 2
1
Publication Order Number:
NTHD4401P/D
NTHD4401P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
V(Br)DSS
VGS = 0 V, ID = −250 A
−20
−23
V
−8.0
mV/°C
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V(Br)DSS/TJ
IDSS
VGS = 0 V
TJ = 25°C
−1.0
VDS = −16 V
TJ = 85°C
−5.0
IGSS
VDS = 0 V, VGS = 12 V
VGS(th)
VGS = VDS, ID = −250 A
A
100
nA
−1.2
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(th)/TJ
−0.6
−0.75
2.65
RDS(on)
VGS = −4.5 V, ID = −2.1 A
VGS = −2.5 V, ID = −1.7 A
VGS = −1.8 V, ID = −1.0 A
0.130
0.200
0.34
gFS
VDS = −10 V, ID = −2.1 A
5.0
mV/°C
0.155
0.240
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
185
300
95
150
Reverse Transfer Capacitance
Crss
30
50
Total Gate Charge
QG(TOT)
3.0
6.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.9
td(on)
7.0
12
13
25
33
50
27
40
−0.85
0 85
−1.15
1 15
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
VGS = −4.5 V, VDS = −10 V,
ID = −2.1 A
pF
0.2
nC
0.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDD = −16 V,
ID = −2.1 A, RG = 2.5 tf
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward
o a d Diode
ode Voltage
o age
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V
IS = −2.1 A
V
32
VGS = 0 V, dIS/dt = 90 A/s,
IS = −2.1 A
QRR
10
22
15
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTHD4401P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = −6 V to −3 V
VGS = −2.4 V
−2.2 V
4
TJ = 25°C
−2 V
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
4
3
−1.8 V
2
−1.6 V
1
−1.4 V
VDS ≥ −10 V
3
2
TC = −55°C
1
25°C
100°C
−1.2 V
0
1
2
4
3
5
7
6
0
0.5
8
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
0.5
ID = −2.1 A
TJ = 25°C
0.4
0.3
0.2
0.1
0
1
6
2
4
3
5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
0.25
TJ = 25°C
0.225
0.2
VGS = −2.5 V
0.175
0.15
VGS = −4.5 V
0.125
0.1
0.5
1.5
2.5
3.5
4.5
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
ID = −2.1 A
VGS = −4.5 V
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
ID = −1.0 A
VGS = −1.8 V
1.2
1
0.8
−50
TJ, JUNCTION TEMPERATURE (°C)
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. On−Resistance Variation with
Temperature
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3
150
NTHD4401P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
600
10000
VDS = 0 V
VGS = 0 V
C, CAPACITANCE (pF)
−IDSS, LEAKAGE (A)
500
TJ = 150°C
1000
TJ = 100°C
100
VGS = 0 V
TJ = 25°C
Ciss
400
Crss
300
200
Coss
100
0
10
2
4
6
8
10
12
14
16
18
10
20
5
0
−VGS −VDS
5
10
15
20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−VDS
5
10
QT
8
4
−VGS
3
6
Q1
2
Q2
4
1
ID = −2.1 A
TJ = 25°C
0
3.5
0
0
0.5
1.5
2.5
1
2
Qg, TOTAL GATE CHARGE (nC)
2
3
100
tf
td(off)
t, TIME (ns)
12
Figure 8. Capacitance Variation
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
6
tr
10
td(on)
VDD = −16 V
ID = −2.1 A
VGS = −4.5 V
1
1
10
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
2.5
VGS = 0 V
TJ = 25°C
2
1.5
1
0.5
0
0.3
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
−IS, SOURCE CURRENT (AMPS)
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
0.5
0.7
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage vs. Current
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4
NTHD4401P
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
D = 0.5
0.2
0.1
Normalized to θja at 10s.
0.05
Chip
0.02
0.0175 Ω
0.0710 Ω
0.2706 Ω
0.0154 F
0.0854 F
0.3074 F
0.5776 Ω
0.7086 Ω
0.01
SINGLE PULSE
0.01
1.0E−03
1.0E−02
1.0E−01
1.0E+00
t, TIME (s)
Figure 12. Thermal Response
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5
1.0E+01
1.7891 F
1.0E+02
107.55 F
Ambient
1.0E+03
NTHD4401P
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.092
0.043
0.635
0.025
0.178
0.007
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
mm
inches
0.66
0.026
Figure 13. Basic
0.254
0.010
SCALE 20:1
mm inches
Figure 14. Style 2
BASIC PAD PATTERNS
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
The basic pad layout with dimensions is shown in
Figure 13. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in
Figure 14 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the
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6
NTHD4401P
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE E
A
8
7
M
6
K
5
S
5
6
7
8
4
3
2
1
B
1
2
3
L
4
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A−01 AND 1206A−02 OBSOLETE. NEW
STANDARD IS 1206A−03.
J
G
DIM
A
B
C
D
G
J
K
L
M
S
C
0.05 (0.002)
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
STYLE 2:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
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7
SOURCE 1
GATE 1
SOURCE 2
GATE 2
DRAIN 2
DRAIN 2
DRAIN 1
DRAIN 1
INCHES
MIN
MAX
0.116
0.122
0.061
0.067
0.039
0.043
0.010
0.014
0.025 BSC
0.004
0.008
0.011
0.017
0.022 BSC
5 ° NOM
0.072
0.080
NTHD4401P
ChipFET is a trademark of Vishay Siliconix
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5773−3850
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8
For additional information, please contact your
local Sales Representative.
NTHD4401P/D