ETC P13914EJ1V0AN00

Application Note
LOW-CURRENT SILICON MMIC
AMPLIFIERS FOR CELLULAR/CORDLESS
TELEPHONES
USAGE AND APPLICATIONS OF µPC8128TB,
µPC8151TB, AND µPC8152TB
Document No. P13914EJ1V0AN00 (1st edition)
Date Published March 1999 N CP (K)
©
Printed in Japan
1999
[MEMO]
2
Application Note P13914EJ1V0AN00
The information in this document will be updated without notice.
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
NESAT is an abbreviation of NEC Silicon Advanced Technology, and is a trademark of NEC Corporation.
This document outlines a typical application of this product, that is, provides an example for designing concept of
an external circuit directly required for this product. NEC only assures the quality and characteristics of this
product specified in this Data Sheet, and is not responsible for any user’s product designs or application sets.
The peripheral circuit shown in this document is just an example prepared for evaluating the operations of this
product, and does not imply that the circuit configurations or constants are recommended values or regulations.
In addition, these circuits are not intended for any mass-produced application sets. This is because the analog
characteristics vary depending on the external parts used, mounting patterns, and other conditions.
For this reason, customers are responsible for designing external circuits according to use-designed system
requirements by referring this document, and should also confirm the characteristics of their application circuit
before use.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or of others.
M4A 96. 10
Application Note P13914EJ1V0AN00
3
CONTENTS
1. INTRODUCTION ..................................................................................................................................... 5
2. PRODUCT LINE-UP .............................................................................................................................. 6
2.1 Characteristics.............................................................................................................................. 6
2.2 System Application Example ...................................................................................................... 8
3. THEORETICAL DESCRIPTION ............................................................................................................ 9
3.1 Description of Internal Circuits ................................................................................................... 9
3.2 Description of External Circuits.................................................................................................. 9
3.3 Test Circuit .................................................................................................................................. 10
4. SAMPLE APPLICATION CHARACTERISTICS................................................................................... 12
4.1 Application Characteristics for Various Matching Methods .................................................. 12
4.2 Characteristics for IF Band Tuning........................................................................................... 14
4.2.1
µPC8128TB Characteristics for 130-MHz Tuning ..........................................................................15
4.2.2
µPC8128TB Characteristics for 240-MHz Tuning ..........................................................................17
4.2.3
µPC8151TB Characteristics for 130-MHz Tuning ..........................................................................19
4.2.4
µPC8151TB Characteristics for 240-MHz Tuning ..........................................................................21
4.2.5
µPC8152TB Characteristics for 130-MHz Tuning ..........................................................................23
4.2.6
µPC8152TB Characteristics for 240-MHz Tuning ..........................................................................25
5. SUMMARY ............................................................................................................................................ 28
6. CONCLUSION ...................................................................................................................................... 29
APPENDIX
S PARAMETER REFERENCE VALUES (TA = +25°°C) ..................................................... 30
Precautions for design-ins
(1)
(2)
Observe precautions for handling because of electro-static sensitive devices.
Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3)
The bypass capacitor should be attached to VCC line.
(4)
The inductor (L) should be attached between VCC pin and output pin.
The L and series capacitor (C2) values should be adjusted for applied frequency to match impedance to next
stage.
(5)
The DC cut capacitor must be attached to input pin.
(6)
You should apply voltage to VCC pin and output pin. You must not apply voltage to input pin nor regulate input
pin voltage (e.g. direct DC pull-down).
4
Application Note P13914EJ1V0AN00
1.
INTRODUCTION
The market for mobile terminals has been expanding continuously in recent years, and as the market share of
hand-held unit advances, there is a growing demand for terminals that are more compact and consume less power.
In addition, recent trends concerning hand-held unit demand that the integrated circuits (ICs) used in this equipment
also must become more compact and consume less power.
NEC has been selling the µPC2714, µPC2715, and µPC2745 to µPC2748 products as local buffer ICs for mobile
communication systems for some time now.
However, to satisfy the demands for compact size, low power
consumption, and high isolation, NEC has developed and created the µPC8128TB, µPC8151TB, and µPC8152TB
low-current silicon microwave monolithic IC (MMIC) amplifiers to be used as various types of buffers for mobile
communication systems.
These application notes introduce the features and application characteristics of these products.
See the data sheet for each product for details of the product's ratings, specifications, and usable conditions.
Application Note P13914EJ1V0AN00
5
2.
PRODUCT LINE-UP
2.1 Characteristics
Table 2-1 shows the line-up of low-current silicon MMIC amplifiers for cellular/cordless telephones.
Table 2-1. Low-Current Silicon MMIC Amplifiers for Cellular/Cordless Telephones Product Line-up
(TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω)
Part Number
(Bulk Part Number)
µPC8128TB
µPC8151TB
µPC8152TB
Remark
VCC
(V)
ICC
(mA)
2.4 to
3.3
1.0-GHz Output Port
Matching Frequency
1.66-GHz Output Port
Matching Frequency
1.9-GHz Output Port
Matching Frequency
Marking
GP
(dB)
ISL
(dB)
PO (1 dB)
(dBm)
GP
(dB)
ISL
(dB)
PO (1 dB)
(dBm)
GP
(dB)
ISL
(dB)
PO (1 dB)
(dBm)
2.8
12.5
39
–4.0
13.0
39
–4.0
13.0
37
–4.0
C2P
4.2
12.5
38
+2.5
15.0
36
+1.5
15.0
34
+0.5
C2U
5.6
23.0
40
–4.5
19.5
36
–8.5
17.5
35
–8.5
C2V
The above values are typical values for major characteristics. See each product's data sheet for detailed
ratings and characteristic, etc.
This line-up achieves low-current consumption, high efficiency, and high gain with the power supply voltage in the
3-V range. The low circuit current consumption is approximately 40% of the 5 to 7.5 mA consumed by the existing
µPC2745 to µPC2748 products. These products use a 6-pin mini mold package of size 2012. Figure 2-1 shows
external views of this package (package drawing).
Due to limited printing space on these mini mold ICs, a three-character is marked instead of part number shown
on the molds. Each three-character marking corresponds to a different part number. Due to space limitations, the
pin 1 mark is printed on the bottom side. Figure 2-2 shows a marking example of these products.
Taping is used as the supplying form for all products and the part number is "Bulk part No. - taping code." For
details, refer to the data sheet.
All ICs in this product line-up have been developed and manufactured using NEC's proprietary NESAT III silicon
bipolar process. For details about this process, refer to the pamphlet entitled "NESAT Process pamphlet" (Document
No. P12647E).
6
Application Note P13914EJ1V0AN00
Figure 2-1. Package Drawing of 6-Pin Super Mini-Mold Low-Current Silicon MMIC Amplifiers
0.15 +0.1
-0
2.1±0.1
1.25±0.1
0.1 MIN.
0.2 +0.1
-0
0 to 0.1
0.65
0.65
0.7
1.3
0.9±0.1
2.0±0.2
(Unit: mm)
Figure 2-2. Exterior of the Marking Example
3
2
1
Remark
C2P
(Top View)
(Bottom View)
4
4
3
5
5
2
6
6
1
The marking example shown in the above figure corresponds to µPC8128TB.
Application Note P13914EJ1V0AN00
7
2.2 System Application Example
Figure 2-3 shows a system block diagram that can be considered as an application example of these ICs due to
system requirement characteristics.
Figure 2-3. System Block Diagram
Location examples in digital cellular
RX
I
Q
DEMO
÷N
SW
PLL
PLL
I
0°
φ
TX
PA
90°
Q
These ICs can be added to your system around ▲ parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
8
Application Note P13914EJ1V0AN00
3.
THEORETICAL DESCRIPTION
3.1 Description of Internal Circuits
The µPC8128TB and µPC8151TB have simple two-stage configurations without negative feedback.
The
µPC8152TB incorporates 50-Ω matching circuit formed by resistors on the input side. A multiple negative feedback
circuit is provided to offset the variations between HFE and resistance. To obtain desired RF characteristics, a twostage configuration is employed. Figure 3-1 shows an internal equivalent circuit.
The output pins of the ICs in this product line-up are used to constitute matching circuits externally, and low
current consumption is achieved due to open collector output of the output-stage transistor and by high impedance
output. For the bias to the output pins, the same voltage as the VCC is applied via the inductor of the matching circuit.
Figure 3-1. Internal Equivalent Circuits of Low-Current Silicon MMIC Amplifiers
µPC8128TB/8151TB
OUT
4
µPC8152TB
VCC
6
6
VCC
4
OUT
IN 1
IN 1
2
5
GND1
3
3
GND1
GND2
2
5
GND2
3.2 Description of External Circuits
External Circuit Configuration
By attaching an external inductor to the output pin, the ICs in this product line-up can achieve low-current
consumption that could not be obtained by conventional internal 50-Ω wideband matching ICs. Therefore, a
narrowband matching circuit should be configured by using an LC externally attached to the output pin to suit the
usage frequency. Also, since the µPC8128TB or µPC8151TB does not have an on-chip 50-Ω matching circuit
based on the resistance of the IC's input stage, the input stage return loss increases. To improve the input stage
return loss of the µPC8128TB or µPC8151TB, a narrowband matching circuit that suits the usage frequency is
also required at the input stage.
The following three external circuit configurations can be considered according to the differences of the matching
circuits.
<1> Output isolation matching (no matching for the input stage, and an output stage return loss optimized to
approximately 10 to 20 dB)
<2> Output 50-Ω matching (no matching for the input stage, and matching of the output stage to 50 Ω)
<3> Input/output 50-Ω matching (matching both of the input and output stages to 50 Ω)
Application Note P13914EJ1V0AN00
9
Design Method
For <2> and <3> above, the 50-Ω matching circuit of the LC should be designed based on the S parameter of the
IC while also taking into account mounting circuit board elements. However, for <1>, since definite points cannot
be represented on a Smith chart, the following procedure must be used to adjust the values.
• First, match the output stage to 50 Ω for a standard.
• Next, while using a network analyzer to monitor S12, adjust the mounting position and constants of the
externally attached circuit (LC) so that the isolation can be excellent.
At NEC, excellent isolation was obtained when this procedure was used to adjust the output stage return loss to
the range of 10 to 20 dB.
The circuit constants that appear in these application notes and the data sheets are values for the corresponding
evaluation boards. Since the evaluation boards, which are designed for simple evaluation, occupy considerable
space, they cannot be applied directly in an actual system. The S parameter values (MAG and ANG) and
input/output Smith charts of the ICs themselves are included in the data sheets and in the appendix of this
document for reference by users of matching circuit design. Users should optimize the matching circuit constants
by referring to this explanation and carefully considering these parameters and the mounting circuit board
elements.
The characteristic curves that appear in the data sheets were measured by creating a matching circuit that
emphasizes isolation (<1> Isolation matching). For characteristics in the circuit configurations of <2> and <3>, see
Table 4-1 Measurement Results in 4.1 Application Characteristics for Various Matching Methods.
3.3 Test Circuit
To measure the electrical specifications described in the data sheet, a test circuit was used in which a matching
circuit was created by an LC at the output pin. Figure 3-2 shows the test circuit used for these ICs, and Figure 3-3
shows the evaluation board layout.
Figure 3-2. Test Circuit
VCC
C7
C6
C4
C5
C3
Output matching circuit
L1
6
50 Ω
IN
C1
4
1
C2
OUT
2,3,5
10
50 Ω
Application Note P13914EJ1V0AN00
This test circuit is used in an NEC measurement jig. Multiple bypass capacitors are used in the VCC line due to
the board pattern design of the NEC jig. The number of bypass capacitors should be reduced by optimizing the
circuit board pattern when performing an actual application.
Figure 3-3. Evaluation Board for µPC8128TB, µPC8151TB, and µPC8152TB
µ PC8128/
51/52TB
Top view (Printed Side)
L1
C2P
OUT
IN
Connector
C2
Connector
C1
C6
C5
Mounting direction
C3
Marking is an example of
the µ PC8128TB.
C4
Notes regarding board examples
• Board material ------ Double-sided copper clad polyamide board is used to reduce loss due to the board.
• Back side ------------ Entire side is ground pattern. Through holes are used to ensure proper grounding for IC
mounting side.
• Specifications------- Board dimensions: 42 × 35 × 0.4 mm, with 35-µm thick copper patterning on both sides.
Application Note P13914EJ1V0AN00
11
4.
SAMPLE APPLICATION CHARACTERISTICS
4.1 Application Characteristics for Various Matching Methods
The ICs in this line-up were turned in a narrow band to a usage frequency within the recommended operating
frequency range (100 to 1900 MHz). This section introduces the results of evaluating the characteristics for each
matching method.
These evaluations where performed according to each of the three matching methods, namely output isolation
matching (matching for which isolation is best), output 50-Ω matching, and input/output 50-Ω matching, at
frequencies of 1.0, 1.66, and 1.9 GHz, using the µPC8128TB. Table 4-1 shows the evaluation results and Figure 4-1
shows the measurement circuits.
The isolation and noise figure values were better for the output isolation matching method than for the other
matching methods. Since the output return loss and input return loss are improved for the output 50-Ω matching and
input/output 50-Ω matching methods, the power gain becomes 1 to 2 dB higher than for the output isolation matching
method. However, the isolation and noise figure results were worse. These evaluation results indicate that when
isolation and noise figure characteristics are emphasized, the output isolation matching method is optimum, but when
power gain is emphasized even if the isolation and noise figure are made somewhat worse, the methods that match
the output and input stages to 50 Ω are optimum. The points at which isolation was best in these evaluation results
(output isolation matching) were obtained by setting the output return loss in the 10 to 20 dB range.
These evaluations were also performed for the µPC8151TB using the same internal circuits as were used for the
µPC8128TB, and similar results were obtained.
Table 4-1. Measurement Results
Test Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
1.0-GHz Tuning
Input Return Loss
S11 (dB)
Output Return Loss
S22 (dB)
Power Gain
S21 (dB)
Isolation
S12 (dB)
Noise Figure
NF (dB)
Output isolation
4.6
15.3
11.7
37.3
5.9
Output 50 Ω
4.6
35.1
12.0
36.7
6.0
Input/output 50 Ω
30.7
27.3
13.6
34.9
6.6
Input Return Loss
S11 (dB)
Output Return Loss
S22 (dB)
Power Gain
S21 (dB)
Isolation
S12 (dB)
Noise Figure
NF (dB)
Output isolation
5.8
16.6
11.0
41.2
5.9
Output 50 Ω
6.3
26.5
11.0
37.8
6.0
Input/output 50 Ω
30.8
27.6
12.1
35.2
6.7
Input Return Loss
S11 (dB)
Output Return Loss
S22 (dB)
Power Gain
S21 (dB)
Isolation
S12 (dB)
Noise Figure
NF (dB)
Output isolation
6.0
11.6
11.1
38.3
5.9
Output 50 Ω
6.3
33.1
11.9
36.2
6.0
Input/output 50 Ω
31.7
29.8
12.0
35.5
7.0
Matching Method
1.66-GHz Tuning
Matching Method
1.9-GHz Tuning
Matching Method
Application Note P13914EJ1V0AN00
12
Figure 4-1. Test Circuits
(1) Output isolation matching circuit
Component List
1.0-GHz Tuning 1.66-GHz Tuning 1.9-GHz Tuning
C1, C2
1 000 pF
1 000 pF
1 000 pF
C3
1.0 pF
0.7 pF
0.5 pF
L1
8.2 nH
3.3 nH
1.8 nH
VCC
C1
L1
6
50 Ω
C2
IN
C3
4
1
Output matching circuit
50 Ω
OUT
2, 3, 5
Ω matching circuit
(2) Output 50-Ω
Component List
1.0-GHz Tuning 1.66-GHz Tuning 1.9-GHz Tuning
C1, C2
1 000 pF
1 000 pF
1 000 pF
C3
0.8 pF
0.7 pF
0.6 pF
L1
8.2 nH
3.3 nH
1.7 nH
VCC
C1
L1
6
50 Ω
IN
C2
C3
4
1
Output matching circuit
50 Ω
OUT
2, 3, 5
Notes:
Used parts for this evaluations
C: Murata’s size 1608 chip capacitor
L: TOKO’s LL2012 Multilayer chip inductor
Application Note P13914EJ1V0AN00
13
Ω matching circuit
(3) Input/output 50-Ω
Component List
1.0-GHz Tuning 1.66-GHz Tuning 1.9-GHz Tuning
C1
1 000 pF
1 000 pF
1 000 pF
C2
1.0 pF
1.5 pF
1.5 pF
C3
1 000 pF
1 000 pF
1 000 pF
C4
0.8 pF
0.7 pF
0.6 pF
L1
10 nH
1.5 nH
2.7 nH
L2
8.2 nH
3.3 nH
1.7 nH
VCC
C1
L2
Input matching circuit
50 Ω
IN
L1
C3
6
C4
4
1
Output matching circuit
50 Ω
OUT
C2
2, 3, 5
4.2 Characteristics for IF Band Tuning
Although the ICs in this line-up were developed as various types of buffer amplifiers for cellular or cordless
telephones, the recommended operating frequency range is 100 to 1900 MHz, and these ICs can also be used at IFband frequencies.
For this section, the characteristics were measured for input/output tunings at operating
frequencies of 130 MHz and 240MHz, which are used frequently in the IF band. Table 4-2 shows the measurement
results, and Figure 4-2 shows the measurement circuits. When these ICs were used in the IF band, the power gain
was higher and the isolation was better than when they were used in the 1 to 2 GHz range.
Table 4-2. Measurement Results
Test Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
130-MHz Input/Output Tuning (Output Tuning Only for the µPC8152TB)
Input Return Loss
S11 (dB)
Output Return Loss
S22 (dB)
Power Gain
S21 (dB)
Isolation
S12 (dB)
Noise Figure
NF (dB)
µPC8128TB
30.8
10.2
17.9
41.5
6.1
µPC8151TB
29.4
11.6
18.7
42.5
6.3
µPC8152TB
26.7
18.8
19.7
51.8
3.1
Part No.
240-MHz Input/Output Tuning (Output Tuning Only for the µPC8152TB)
Input Return Loss
S11 (dB)
Output Return Loss
S22 (dB)
Power Gain
S21 (dB)
Isolation
S12 (dB)
Noise Figure
NF (dB)
µPC8128TB
37.9
32.3
16.9
36.1
6.2
µPC8151TB
22.3
29.3
16.4
37.3
6.5
µPC8152TB
25.5
21.8
20.2
48.2
3.2
Part No.
14
Application Note P13914EJ1V0AN00
4.2.1 µPC8128TB Characteristics for 130-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
47.223 Ω 0.8945 Ω
1
S11
−30.848 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
130.0 MHz
1
30
20
10
0
−10
−20
1
−30
−40
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
S22
REF 1.0 Units
200.0 mUnits/
26.38 Ω 1.1035 Ω
1
S22
1
Output Return Loss RLout (dB)
1
40
30
20
10
0
1
−10
−20
−30
−40
100
150
Frequency f (MHz)
S12
−41.518 dB
S21
1
17.939 dB
50
30
40
20
30
10
20
10
Isolation ISL (dB)
Power Gain GP (dB)
−10.186 dB
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
1
0
−10
−20
0
10
20
30
−50
−40
−60
100
150
1
−40
−30
−50
50
150
50
MARKER 1
130.0 MHz
1
100
Frequency f (MHz)
−70
50
Frequency f (MHz)
100
150
Frequency f (MHz)
Application Note P13914EJ1V0AN00
15
µPC8128TB Characteristics for 130-MHz Tuning
+5
TA = +25 °C
VCC = 3.3 V
VCC = 3.0 V
Output Power Pout (dBm)
0
−5
VCC = 2.4 V
−10
VCC = 2.7 V
−15
−20
−25
−40 −35 −30 −25 −20 −15 −10 −5
0
+5
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
+10
TA = +25 °C
0 VCC = 3.0 V
f1 = 130 MHz Pout (each)
−10 f2 = 131 MHz
IM3
−20
−30
−40
−50
−60
−70
−80
−90
−40 −35 −30 −25 −20 −15 −10 −5
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
7
TA = +25 °C
6.5
6
5.5
5
2
2.5
3
3.5
Supply Voltage VCC (V)
16
0
Input Power of Each Tone Pin (each) (dBm)
Input Power Pin (dBm)
Application Note P13914EJ1V0AN00
+5
4.2.2 µPC8128TB Characteristics for 240-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
50.492 Ω 1.1777 Ω
1
S11
−37.92 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
240.0 MHz
1
30
20
10
0
−10
−20
−30
1
−40
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
S22
REF 1.0 Units
200.0 mUnits/
48.455 Ω −1.793 Ω
1
S22
−32.381 dB
Output Return Loss RLout (dB)
50
1
40
30
20
10
0
−10
−20
−40
300
S12
−36.154 dB
1
16.886 dB
30
0
−10
20
−20
1
0
Isolation ISL (dB)
Power Gain GP (dB)
250
Frequency f (MHz)
S21
−10
−20
−30
−40
−50
−30
1
−40
−50
−60
−70
−80
−60
−70
200
1
−30
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
10
300
1
MARKER 1
240.0 MHz
1
250
Frequency f (MHz)
−90
250
300
−100
200
Frequency f (MHz)
250
300
Frequency f (MHz)
Application Note P13914EJ1V0AN00
17
µPC8128TB Characteristics for 240-MHz Tuning
+5
Output Power Pout (dBm)
VCC = 3.0 V
TA = +25 °C
0
VCC = 3.3 V
−5
VCC = 2.7 V VCC = 2.4 V
−10
−15
−20
−25
−30
−35
−40
−50 −45 −40 −35 −30 −25 −20 −15 −10 −5
0
+5 +10
Input Power Pin (dBm)
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
0
TA = +25 °C
Pout (each)
−10 VCC = 3.0 V
f1 = 240 MHz
f2 = 241 MHz
IM3
−20
−30
−40
−50
−60
−70
−80
−90
−60 −55 −50 −45 −40 −35 −30 −25 −20 −15 −10 −5 0 +5
Input Power of Each Tone Pin (each) (dBm)
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
7
TA = +25 °C
6.5
6
5.5
5
2
2.5
3
3.5
Supply Voltage VCC (V)
18
Application Note P13914EJ1V0AN00
4.2.3 µPC8151TB Characteristics for 130-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
1
52.793 Ω −2.0508 Ω
S11
−29.448 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
130.0 MHz
1
30
20
10
0
−10
−20
−30
−40
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
S22
−11.588 dB
Output Return Loss RLout (dB)
50
1
40
30
20
10
0
1
−10
−20
−30
−40
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
100
150
Frequency f (MHz)
S21
S12
−42.561 dB
18.668 dB
1
30
0
1
20
−10
10
−20
0
−30
Isolation ISL (dB)
Power Gain GP (dB)
150
1
MARKER 1
130.0 MHz
−10
−20
−30
−40
−50
−40
−50
1
−60
−70
−80
−60
−70
50
100
Frequency f (MHz)
S22
REF 1.0 Units
200.0 mUnits/
31.99 Ω 12.297 Ω
1
1
1
−90
100
150
−100
50
Frequency f (MHz)
100
150
Frequency f (MHz)
Application Note P13914EJ1V0AN00
19
µPC8151TB Characteristics for 130-MHz Tuning
+5
TA = +25 °C
VCC = 3.0 V
VCC = 3.3 V
Output Power Pout (dBm)
0
−5
VCC = 2.4 V
VCC = 2.7 V
−10
−15
−20
−25
−40 −35 −30 −25 −20 −15 −10 −5
0
+5
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
0
Pout (each)
−10
−20
IM3
−30
−40
−50
−60
−70
TA = +25 °C
VCC = 3.0 V
f1 = 130 MHz
f2 = 131 MHz
−80
−90
−40 −35 −30 −25 −20 −15 −10 −5
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
8
TA = +25 °C
7.5
7
6.5
6
2
2.5
3
3.5
Supply Voltage VCC (V)
20
0
Input Power of Each Tone Pin (each) (dBm)
Input Power Pin (dBm)
Application Note P13914EJ1V0AN00
+5
4.2.4 µPC8151TB Characteristics for 240-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
57.809 Ω −2.5215 Ω
1
S11
−22.374 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
240.0 MHz
1
30
20
10
0
−10
1
−20
−30
−40
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
S22
REF 1.0 Units
200.0 mUnits/
52.414 Ω 2.5352 Ω
1
S22
−29.324 dB
Output Return Loss RLout (dB)
50
1
40
30
20
10
0
−10
−20
−30
−40
S12
−37.291 dB
0
−10
−20
1
0
Isolation ISL (dB)
Power Gain GP (dB)
300
1
16.379 dB
20
−10
−20
−30
−40
−30
−50
−60
−70
−80
−60
−90
250
300
1
−40
−50
−70
200
250
Frequency f (MHz)
S21
10
1
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
30
300
1
MARKER 1
240.0 MHz
1
250
Frequency f (MHz)
−100
200
Frequency f (MHz)
250
300
Frequency f (MHz)
Application Note P13914EJ1V0AN00
21
µPC8151TB Characteristics for 240-MHz Tuning
+5
Output Power Pout (dBm)
VCC = 3.0 V
TA = +25 °C
0
VCC = 3.3 V
-5
VCC = 2.7 V VCC = 2.4 V
-10
-15
-20
-25
-30
-35
-40
-50 -45 -40 -35 -30 -25 -20 -15 -10 -5
0
+5 +10
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
0
TA = +25 °C
Pout (each)
-10 VCC = 3.0 V
f1 = 240 MHz
f2 = 241 MHz
-20
IM3
-30
-40
-50
-60
-70
-80
-90
-60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
7
TA = +25 °C
6.5
6
5.5
5
2
2.5
3
3.5
Supply Voltage VCC (V)
22
0 +5
Input Power of Each Tone Pin (each) (dBm)
Input Power Pin (dBm)
Application Note P13914EJ1V0AN00
4.2.5 µPC8152TB Characteristics for 130-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
1
45.729 Ω 1.0176 Ω
S11
−26.767 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
130.0 MHz
1
30
20
10
0
−10
−20
1
−30
−40
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
S22
REF 1.0 Units
200.0 mUnits/
40.525 Ω 4.3047 Ω
1
S22
−18.799 dB
Output Return Loss RLout (dB)
50
1
40
30
20
10
0
−10
−30
−40
100
150
Frequency f (MHz)
S21
S12
−51.807 dB
1
19.712 dB
30
0
20
−10
1
10
−20
0
Isolation ISL (dB)
Power Gain GP (dB)
1
−20
−50
50
START 0.050000000 GHz
STOP 0.150000000 GHz
−10
−20
−30
−40
−50
−30
−40
1
−50
−60
−70
−80
−60
−70
50
150
1
MARKER 1
130.0 MHz
1
100
Frequency f (MHz)
−90
100
150
−100
50
Frequency f (MHz)
100
150
Frequency f (MHz)
Application Note P13914EJ1V0AN00
23
µPC8152TB Characteristics for 130-MHz Tuning
+5
TA = +25 °C
VCC = 3.0 V
VCC = 3.3 V
Output Power Pout (dBm)
0
−5
VCC = 2.4 V
VCC = 2.7 V
−10
−15
−20
−25
−40 −35 −30 −25 −20 −15 −10 −5
0
+5
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
0
−10
Pout (each)
−20
IM3
−30
−40
−50
−60
TA = +25 °C
VCC = 3.0 V
f1 = 130 MHz
f2 = 131 MHz
−70
−80
−40 −35 −30 −25 −20 −15 −10 −5
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
4
TA = +25 °C
3.5
3
2.5
2
2
2.5
3
3.5
Supply Voltage VCC (V)
24
0
Input Power of Each Tone Pin (each) (dBm)
Input Power Pin (dBm)
Application Note P13914EJ1V0AN00
+5
4.2.6 µPC8152TB Characteristics for 240-MHz Tuning
Conditions: TA = +25°C, VCC = Vout = 3.0 V, ZL = ZS = 50 Ω
S11
REF 1.0 Units
200.0 mUnits/
46.627 Ω 3.8691 Ω
1
S11
−25.499 dB
1
50
Input Return Loss RLin (dB)
40
MARKER 1
240.0 MHz
1
30
20
10
0
−10
−20
1
−30
−40
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
S22
REF 1.0 Units
200.0 mUnits/
46.285 Ω −6.9063 Ω
1
S22
−21.865 dB
Output Return Loss RLout (dB)
50
1
40
30
20
10
0
−10
−30
−40
300
S12
−48.166 dB
20.188 dB
1
50
0
40
−10
−20
1
20
Isolation ISL (dB)
Power Gain GP (dB)
250
Frequency f (MHz)
S21
10
0
−10
−20
−30
−40
−50
−60
1
−70
−80
−30
−90
−40
−50
200
1
−20
−50
200
START 0.200000000 GHz
STOP 0.300000000 GHz
30
300
1
MARKER 1
240.0 MHz
1
250
Frequency f (MHz)
250
300
−100
200
Frequency f (MHz)
250
300
Frequency f (MHz)
Application Note P13914EJ1V0AN00
25
µPC8152TB Characteristics for 240-MHz Tuning
+5
TA = +25 °C
VCC = 3.0 V
VCC = 3.3 V
Output Power Pout (dBm)
0
-5
VCC = 2.4 V
VCC = 2.7 V
-10
-15
-20
-25
-40 -35 -30 -25 -20 -15 -10
-5
0
+5
Output Power of Each Tone Pout (each) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
Output Power vs. Input Power
Output Power of Each Tone and 3rd Order Intermodulation
Distortion vs. Input Power of Each Tone
0
-10
Pout (each)
-20
IM3
-30
-40
-50
-60
-70
-80
-40 -35 -30 -25 -20 -15 -10
Noise Figure vs. Supply Voltage
Noise Figure NF (dB)
TA = +25 °C
3.5
3
2.5
2
2
2.5
3
3.5
Supply Voltage VCC (V)
26
-5
0
Input Power of Each Tone Pin (each) (dBm)
Input Power Pin (dBm)
4
TA = +25 °C
VCC = 3.0 V
f1 = 240 MHz
f2 = 241 MHz
Application Note P13914EJ1V0AN00
+5
Figure 4-2. Test Circuits
(1) µPC8128TB/µPC8151TB
VCC
C1
Output port matching circuit
L2
Input port matching circuit
50 Ω
IN
C3
L1
6
C4
4
1
50 Ω
OUT
C2
2, 3, 5
Component List
130-MHz Input/Output Tuning 240-MHz Input/Output Tuning
C1
1 000 pF
1 000 pF
C2
2.5 pF
0.5 pF
C3
200 pF
1 000 pF
C4
3.5 pF
1.5 pF
L1
180 nH
83 nH
L2
270 nH
120 nH
(2) µPC8152TB
VCC
C1
Output port matching circuit
L1
6
50 Ω
C2
IN
4
1
C3
50 Ω
OUT
2, 3, 5
Component List
130-MHz Input/Output Tuning 240-MHz Input/Output Tuning
C1, C2
1 000 pF
1 000 pF
C3
12 pF
5 pF
L1
135 nH
68 nH
Application Note P13914EJ1V0AN00
27
5.
SUMMARY
Table 5-1. External Circuit Configuration and Characteristics
External Circuit Configuration
Main Characteristic Change
Output isolation matching (no matching
for the input stage, and an output stage
return loss optimized to approximately 10
to 20 dB)
Isolation and noise figure are better than for
the output 50-Ω matching and input/output
50-Ω matching methods.
Isolation and noise figure are
emphasized
Output 50-Ω matching (no matching for
the input stage)
As compared with the output isolation
matching method, power gain increases by
approximately 1 dB.
Isolation worsens by approximately 2 dB.
Power gain and noise figure are
emphasized.
Input/output 50-Ω matching
As compared with the output isolation
matching method, power gain increases by
approximately 2 dB.
Isolation worsens by approximately 3 dB.
Noise figure worsens by approximately 1 dB.
Power gain is emphasized.
28
Application Note P13914EJ1V0AN00
Emphasized Characteristic
6.
CONCLUSION
These application notes explained the characteristics of application circuits using the µPC8128TB, µPC8151TB,
and µPC8152TB, which are a series of low-current silicon MMIC amplifiers for cellular/cordless telephones, and
presented examples for selecting these ICs.
We hope that these application notes will be of some assistance to you when you use these silicon MMICs.
References
{ Data sheets for each product
µPC8128TB, µPC8151TB, µPC8152TB (Document No. P12549E)
µPC2745TB, µPC2746TB (Document No. P11511E)
µPC2747TB, µPC2748TB (Document No. P13444E)
{ Application Notes
Usage and Applications of 6-Pin Mini-mold, 6-Pin Super Mini-mold Silicon High-Frequency Wideband
Amplifier MMIC (Document No. P11976E)
Application Note P13914EJ1V0AN00
29
APPENDIX
S PARAMETER REFERENCE VALUES (TA = +25°°C)
µPC8128TB
VCC = Vout = 3.0 V, ICC = 2.8 mA
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
30
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
.859
.769
.694
.637
.595
.568
.555
.569
.597
.633
.643
.644
.611
.585
.562
.559
.547
.540
.524
.503
.474
.461
.465
.475
.488
.491
.480
.460
.437
.410
.401
–14.5
–23.8
–27.1
–30.1
–32.4
–35.9
–40.7
–45.0
–49.4
–52.6
–56.3
–59.7
–64.3
–69.5
–75.1
–80.5
–85.4
–89.5
–93.2
–97.8
–103.5
–110.0
–116.2
–121.0
–123.1
–125.0
–125.1
–127.0
–129.4
–133.4
–137.8
1.089
1.138
1.208
1.336
1.478
1.623
1.822
1.955
2.147
2.307
2.468
2.572
2.677
2.704
2.693
2.712
2.640
2.665
2.599
2.582
2.500
2.472
2.453
2.426
2.364
2.310
2.282
2.159
2.205
2.085
2.038
–176.0
–173.2
–171.0
–171.7
–172.8
–175.6
–179.0
176.9
172.5
166.8
160.6
153.6
144.2
137.3
128.8
122.7
116.3
110.4
104.5
98.5
93.1
86.7
80.9
74.8
70.4
63.9
61.1
56.3
51.4
48.8
42.4
.001
.001
.003
.005
.005
.005
.006
.007
.007
.008
.008
.007
.007
.005
.005
.005
.006
.005
.005
.006
.007
.008
.009
.010
.012
.011
.014
.014
.016
.018
.019
176.7
142.6
112.3
88.8
77.7
64.1
73.7
64.2
72.5
49.9
66.8
48.8
45.3
64.5
66.0
93.6
83.5
101.6
115.4
110.9
129.4
130.5
137.8
133.3
139.0
140.8
142.6
140.7
141.5
143.2
142.1
1.005
1.019
1.015
.996
.976
.976
.983
.988
.973
.945
.928
.934
.950
.938
.913
.898
.892
.893
.896
.895
.877
.873
.878
.877
.871
.864
.855
.851
.867
.861
.855
–1.7
–4.2
–5.8
–8.7
–10.9
–12.8
–14.1
–15.5
–17.4
–19.9
–22.0
–24.1
–24.8
–26.6
–28.2
–30.1
–32.0
–33.6
–34.7
–36.5
–38.6
–40.4
–41.9
–43.5
–45.4
–47.9
–51.1
–53.0
–55.1
–57.0
–60.0
Application Note P13914EJ1V0AN00
µPC8151TB
VCC = Vout = 3.0 V, ICC = 4.2 mA
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
.843
.752
.666
.603
.555
.528
.517
.525
.545
.571
.580
.588
.571
.563
.553
.552
.551
.550
.536
.517
.495
.484
.484
.490
.499
.499
.485
.464
.439
.416
.403
–16.0
–27.1
–32.4
–36.8
–40.5
–44.8
–49.9
–54.4
–58.9
–62.8
–67.3
–71.3
–76.4
–82.3
–88.8
–95.2
–101.5
–107.5
–113.3
–119.8
–127.1
–135.3
–142.6
–148.5
–152.5
–155.8
–157.4
–160.6
–164.1
–168.6
–173.6
1.202
1.197
1.221
1.299
1.398
1.513
1.691
1.815
2.008
2.189
2.399
2.560
2.736
2.865
2.946
3.077
3.083
3.174
3.164
3.193
3.149
3.143
3.135
3.120
3.053
2.991
2.958
2.810
2.866
2.713
2.635
–178.9
–177.5
–175.4
–174.5
–174.0
–174.9
–176.2
–178.2
179.5
175.7
171.2
165.9
157.5
151.3
143.3
137.0
130.1
123.9
117.4
110.7
104.4
97.3
90.5
83.5
78.4
71.4
68.0
62.9
57.5
54.5
48.0
.000
.003
.003
.004
.005
.005
.007
.007
.006
.009
.007
.007
.008
.008
.006
.006
.009
.009
.006
.009
.010
.011
.012
.015
.016
.018
.018
.021
.022
.025
.030
69.5
120.2
103.2
92.8
88.8
95.2
67.5
72.4
84.5
78.3
60.0
89.5
67.2
79.6
79.9
91.4
102.3
100.5
109.5
115.9
124.2
122.4
131.7
138.1
136.3
142.9
143.9
142.5
149.3
148.4
143.6
.996
1.009
.998
.986
.968
.968
.971
.972
.960
.936
.926
.933
.941
.930
.906
.895
.888
.884
.885
.881
.870
.867
.866
.868
.866
.864
.858
.852
.872
.864
.867
–3.3
–6.9
–9.9
–13.8
–17.3
–20.4
–23.1
–25.8
–29.3
–32.8
–36.3
–39.5
–42.0
–45.0
–48.1
–51.5
–54.8
–57.3
–60.2
–63.4
–66.6
–69.8
–72.3
–75.5
–78.7
–82.5
–86.6
–89.7
–93.4
–96.6
–101.0
Application Note P13914EJ1V0AN00
31
µPC8152TB
VCC = Vout = 3.0 V, ICC = 5.6 mA
FREQUENCY
MHz
100.0000
200.0000
300.0000
400.0000
500.0000
600.0000
700.0000
800.0000
900.0000
1000.0000
1100.0000
1200.0000
1300.0000
1400.0000
1500.0000
1600.0000
1700.0000
1800.0000
1900.0000
2000.0000
2100.0000
2200.0000
2300.0000
2400.0000
2500.0000
2600.0000
2700.0000
2800.0000
2900.0000
3000.0000
3100.0000
32
S11
S21
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
.062
.047
.055
.078
.101
.121
.135
.143
.146
.146
.153
.157
.164
.168
.171
.165
.164
.156
.158
.148
.140
.124
.104
.085
.068
.059
.055
.054
.054
.055
.057
168.0
169.1
166.9
162.1
155.6
147.4
141.2
133.2
122.4
108.9
97.4
82.7
73.3
63.4
56.1
47.2
38.7
30.2
25.1
21.5
19.1
21.6
19.3
17.8
10.9
9.9
–0.1
0.2
1.9
12.0
22.3
6.691
7.049
7.418
7.883
8.311
8.583
9.093
9.276
9.572
9.763
9.851
9.926
9.816
9.586
9.332
9.128
8.544
8.152
7.607
7.264
6.759
6.366
6.028
5.642
5.200
4.874
4.527
4.202
4.005
3.697
3.502
–0.3
–3.7
–9.3
–16.0
–22.1
–29.7
–37.3
–45.4
–53.6
–62.6
–71.9
–80.5
–91.2
–99.6
–109.4
–117.9
–126.1
–133.5
–140.6
–147.5
–153.7
–159.7
–165.7
–171.5
–176.0
179.1
175.9
171.3
167.7
164.4
160.4
.002
.001
.003
.003
.005
.004
.006
.005
.009
.009
.007
.011
.010
.011
.011
.009
.011
.011
.011
.012
.013
.012
.014
.015
.015
.016
.017
.022
.021
.021
.023
40.8
101.6
97.3
70.7
76.7
80.5
79.8
85.9
89.6
70.3
90.8
84.9
81.9
81.4
82.3
79.0
77.5
76.8
75.9
75.8
82.6
92.4
88.9
89.8
87.2
94.2
93.5
88.2
91.4
86.8
83.9
.775
.773
.761
.759
.754
.754
.756
.755
.752
.745
.733
.723
.710
.679
.649
.624
.591
.557
.527
.498
.476
.455
.438
.418
.399
.390
.380
.372
.369
.360
.352
–3.3
–6.6
–9.1
–12.0
–15.3
–18.3
–21.3
–24.7
–28.1
–32.0
–36.3
–40.3
–44.3
–48.5
–52.0
–56.3
–59.2
–61.4
–63.4
–65.6
–66.8
–67.1
–68.1
–68.1
–69.5
–69.2
–70.2
–70.3
–69.5
–69.6
–71.0
Application Note P13914EJ1V0AN00
[MEMO]
Application Note P13914EJ1V0AN00
33
[MEMO]
34
Application Note P13914EJ1V0AN00
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