ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON ■ ■ ■ ■ HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE HIGH DC CURRENT GAIN APPLICATION HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES ■ DESCRIPTION The ST901T is a high voltage NPN silicon transistor in monolithic special Darlington configuration mounted in Jedec TO-220 plastic package, designed for applications such as electronic ignition for small engines (scooters, lawnmowers, chainsaws). 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector- Emitter Voltage (V BE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 350 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 4 A Collector Peak Current 8 A IC I CM Base Current 0.5 A I BM Base Peak Current 2.5 A P tot Total Dissipation at T c ≤ 25 o C 30 IB T stg Tj June 1997 Storage Temperature Max. Operating Junction Temperature W -65 to 175 o C 175 o C 1/4 ST901T THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I CEO I EBO Parameter Test Conditions Min. Max. Unit o 100 0.5 µA mA o 100 0.5 µA mA 10 µA Collector Cut-off Current (I E = 0) V CE = 500 V V CE = 500 V T case = 125 C Collector Cut-off Current (I B = 0) V CE = 350 V V CE = 350 V T case = 125 C Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 10 mA L = 10 mH IB = 0 Typ. 350 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A I B = 20 mA 1.3 V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A I B = 20 mA 1.8 V DC Current Gain IC = 2 A IC = 4 A V CE =2 V V CE =2 V Functional Test V CC = 24 V L = 4 mH V clamp = 350 V INDUCTIVE LOAD Storage Time Fall Time V CC = 12 V L = 4 mH IC = 2 A V BE = -3 V V clamp = 250 V h FE ∗ ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 I B = 20 mA 1500 500 4 A 15 1.5 µs µs ST901T TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 ST901T Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4