SIRECTIFIER HUR820S

HUR820S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-263(D2PAK)
C(TAB)
A
C
A
NC
A=Anode, NC= No connection, TAB=Cathode
VRSM
V
200
HUR820S
Symbol
VRRM
V
200
Test Conditions
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
E
E1
e
9.65
10.29
6.22
8.13
2.54 BSC
.380
.405
.245
.320
.100 BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
.110
.055
.070
.008
R
0.46
0.74
.018
.029
Maximum Ratings
Unit
IFRMS
IFAVM
TC=150oC; rectangular, d=0.5
35
8
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
80
A
0.5
mJ
0.2
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=2A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
typical
o
C
60
W
0.4...0.6
Nm
2
g
HUR820S
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
50
0.2
uA
mA
VF
IF=8A; TVJ=150oC
TVJ=25oC
0.94
1.30
V
RthJC
RthCH
trr
IRM
2.5
0.5
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
25
o
VR=100V; IF=10A; -diF/dt=100A/us; TVJ=100 C
K/W
ns
4.1
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch