RoHS 12T Series RoHS SEMICONDUCTOR TRIACs, 12A Snubberless, Logic Level and Standard FEATURES Medium current triac Low thermal resistance with clip bonding A2 Low thermal resistance insulation ceramic for insulated TO-220AB package 1 High commutation (4Q) or very high commutation (3Q) capability A1 A2 G 12T series are UL certified (File ref: E320098) TO-220AB (non-Insulated) (12TxxA) Packages are RoHS compliant 2 3 TO-220AB (lnsulated) (12TxxAI) A2 APPLICATIONS ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance motors speed controllers. A1 A2 G TO-263 (D2PAK) (12TxxH) The snubberless versions (with suffix W) are especially recommended for use on inductive loads, because of their high commutation performances. The 12T series provides an insulated tab (rated at 2500V RMS ). MAIN FEATURES SYMBOL VALUE UNIT I T(RMS) 12 A V DRM /V RRM 600 to 1000 V I GT(Q1) 5 to 50 mA ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS F =50 Hz t = 20 ms 120 F =60 Hz t = 16.7 ms 126 Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC Operating junction temperature range www.nellsemi.com A Tc = 90ºC t p = 10 ms Storage temperature range 12 TO-220AB insulated 2 Average gate power dissipation UNIT TO-263/TO-220AB I t I2t Value for fusing VALUE Tc = 105ºC A 72 A2s T j =125ºC 50 A/µs T j =125ºC 4 A 1 W Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 6 RoHS 12T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) SNUBBERLESS and Logic level (3 quadrants) 12Txxxx SYMBOL IGT(1) QUADRANT TEST CONDITIONS V D = V DRM , R L = 3.3KΩ T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT (dI/dt)c(2) CW BW 05 10 35 50 I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.2 V MAX. I - III dV/dt(2) SW mA V D = 12 V, R L = 30Ω VGT VGD Unit TW 10 15 40 60 15 20 50 70 25 35 60 80 20 40 500 1000 3.5 6.5 - - 1 2.9 - - - - 6.5 12 mA MAX. II V D = 67% V DRM , gate open ,T j = 125°C MIN. (dV/dt)c = 0.1 V/µs T j = 125°C (dV/dt)c = 10 V/µs T j = 125°C Without snubber T j = 125°C MIN. mA V/µs A/ms ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 12Txxxx TEST CONDITIONS SYMBOL IGT(1) QUADRANT I - II - III V D = 12 V, R L = 30Ω C MAX. IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 500 mA IL I G = 1.2 I GT (dV/dt)c(2) 25 50 50 100 UNIT mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV MAX. II dV/dt(2) B 25 50 40 50 80 80 mA mA V D = 67% V DRM , gate open, T j = 125°C MIN. 200 400 V/µs (dI/dt)c = 5.3 A/ms, T j = 125°C MIN. 5 10 V/µs STATIC CHARACTERISTICS SYMBOL VTM(2) TEST CONDITIONS VALUE UNIT MAX. 1.55 V T j = 125°C MAX. 0.85 V Dynamic resistance T j = 125°C MAX. 35 mΩ VD = VDRM VR = VRRM T j = 25°C 5 µA 1 mA I TM = 17 A, t P = 380 µs T j = 25°C Threshold voltage R d (2) IDRM IRRM Vt0 (2) MAX. T j = 125°C Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. www.nellsemi.com Page 2 of 6 RoHS 12T Series RoHS SEMICONDUCTOR THERMAL RESISTANCE VALUE UNIT TO-220AB, TO-263 TO-220AB Insulated 1.4 2.3 °C/W TO-263 45 TO-220AB Insulated, TO-220AB 60 SYMBOL Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S = 1 cm 2 °C/W S = Copper surface under tab. PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 50 mA Standard TO-220AB V V 50 mA Snubberless TO-220AB V V V 25 mA Standard TO-220AB 12TxxA-CW/12TxxAl-CW V V V 35 mA Snubberless TO-220AB 12TxxA-SW/12TxxAl-SW V V V 10 mA Logic level TO-220AB 12TxxA-TW/12TxxAI-TW V V V 5 mA Logic level TO-220AB 12TxxH -SW V V V 10 mA Logic level D 2 PAK 12TxxH -CW V V V 35 mA Snubberless D 2 PAK 12TxxH -BW V V V 50 mA Snubberless D 2 PAK 600 V 800 V 1000 V 12TxxA-B/ 12TxxAl-B V V 12TxxA-BW/12TxxAl-BW V 12TxxA-C/12TxxAl-C AI: Insulated TO-220AB package ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 12TxxA-yy 12TxxA-yy TO-220AB 2.0g 50 Tube 12TxxAI-yy 12TxxAI-yy TO-220AB (insulated) 2.3g 50 Tube 12TxxH-yy 12TxxH-yy TO-236(D 2 PAK) 2.0g 50 Tube Note: xx = voltage, yy = sensitivity ORDERING INFORMATION SCHEME 12 T 06 Current 12 = 12A Triac series Voltage 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) H = TO-263 (D 2 PAK) IGT Sensitivity B = 50mA Standard C = 25mA Standard SW = 10mA Logic Level www.nellsemi.com BW = 50mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Page 3 of 6 A - BW RoHS 12T Series RoHS SEMICONDUCTOR Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) IT(RMS) (A) 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 16 14 12 10 8 6 4 2 0 I T(RMS) (A) 0 1 3 2 5 4 7 6 8 9 10 11 12 TO-220AB ( insulated ) TO-220AB TO-263 T C (°C) 0 25 Fig.3 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS) (A) 1E+0 3.5 Zth(j-c) D 2 PAK (S=1cm 2 ) 3.0 2.5 Zth(j-a) 2.0 1E-1 1.5 1.0 0.5 Tc(°C) 0.0 0 25 75 50 100 125 Fig.5 On-state characteristics (maximum values). I 100 1E-1 1E+0 1E+1 1E+2 5E+2 ITSM (A) 130 120 110 100 90 80 70 60 50 40 30 20 10 0 Tj max. Vto = 0.85 V Rd = 35 mΩ Tj=Tj max Tj=25°C 10 VTM(V) 1 t=20ms Non repetitive Tj initial=25°C 1.5 www.nellsemi.com 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Page 4 of 6 One cycle Repetitive Tc=90°C Number of cycles 1 1.0 1E-2 Fig.6 Surge peak on-state current versus number of cycles. (A) 0.5 tp(s) 1E-2 1E-3 10 100 1000 RoHS 12T Series RoHS SEMICONDUCTOR Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms. and corresponding value of l 2 t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] l TSM (A), l 2 t(A 2 s) 2.5 dI/dt limitation: 50A/µs 1000 Tj initial=25°C 2.0 IGT I TSM 1.5 IH & IL 100 1.0 I2t 0.5 Tj(°C) tp (ms) 10 0.01 0.10 1.00 10.00 Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig.10 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 5.0 2.8 4.5 2.4 4.0 2.0 SW C 1.6 TW 3.5 3.0 B 2.5 CW/BW 1.2 2.0 0.8 1.5 0.4 1.0 (dV/dt)c (V/µs) 0.5 0.0 0.1 1.0 10.0 100.0 (dV/dt)c (V/µs) 0.0 0.1 1.0 10.0 100.0 Fig.12 D 2 PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) Fig.11 Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] (dl/dt)c [Tj specified ] R th(j-a) (°C/W) 80 6 70 5 60 4 50 D 2 PAK 40 3 30 2 20 S(cm2) 10 1 Tj(°C) 0 0 0 0 25 www.nellsemi.com 50 75 100 125 Page 5 of 6 4 8 12 16 20 24 28 32 36 40 RoHS 12T Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) www.nellsemi.com Page 6 of 6 2.79 (0.110)