EUPEC FZ1600R17KF6C

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
VCES
1700
V
TC = 80 °C
IC,nom.
1600
A
TC = 25 °C
IC
2600
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
ICRM
3200
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot
12,5
kW
VGES
+/- 20V
V
IF
1600
A
IFRM
3200
A
2
I t
660
kA2s
VISOL
4
kV
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tp = 1 ms
Grenzlastintegral der Diode
2
I t - value, Diode
VR = 0V, t p = 10ms, T Vj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 1600A, V GE = 15V, Tvj = 25°C
VCE sat
IC = 1600A, V GE = 15V, Tvj = 125°C
typ.
max.
2,6
3,1
V
3,1
3,6
V
5,5
6,5
V
Gate-Schwellenspannung
gate threshold voltage
IC = 130mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
QG
19
µC
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
105
nF
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cres
5,3
nF
VCE = 1700V, V GE = 0V, Tvj = 25°C
ICES
0,04
3
mA
20
160
mA
400
nA
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VGE(th)
VCE = 1700V, V GE = 0V, Tvj = 125°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, V GE = 20V, Tvj = 25°C
prepared by: Alfons Wiesenthal
date of publication: 19.01.2001
approved by: Christoph Lübke; 06.02.2001
revision: 2 (Serie)
1(8)
IGES
4,5
FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Charakteristische Werte / Characteristic values
min.
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
VGE = ±15V, RG = 0,9Ω, Tvj = 25°C
td,on
VGE = ±15V, RG = 0,9Ω, Tvj = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
VGE = ±15V, RG = 0,9Ω, Tvj = 25°C
tr
VGE = ±15V, RG = 0,9Ω, Tvj = 25°C
td,off
µs
µs
0,19
µs
0,19
µs
1,2
µs
1,2
µs
IC = 1600A, V CE = 900V
VGE = ±15V, RG = 0,9Ω, Tvj = 25°C
tf
0,15
µs
0,16
µs
Eon
430
mWs
Eoff
670
mWs
ISC
6400
A
LsCE
12
nH
RCC´+EE´
0,08
mΩ
VGE = ±15V, RG = 0,9Ω, Tvj = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
IC = 1600A, V CE = 900V, V GE = 15V
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
IC = 1600A, V CE = 900V, V GE = 15V
Kurzschlußverhalten
SC Data
0,3
0,3
IC = 1600A, V CE = 900V
VGE = ±15V, RG = 0,9Ω, Tvj = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
max.
IC = 1600A, V CE = 900V
VGE = ±15V, RG = 0,9Ω, Tvj = 125°C
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
typ.
IC = 1600A, V CE = 900V
RG = 0,9Ω, Tvj = 125°C, LS = 50nH
RG = 0,9Ω, Tvj = 125°C, LS = 50nH
tP ≤ 10µsec, V GE ≤ 15V
TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt
Modulinduktivität
stray inductance module
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
Charakteristische Werte / Characteristic values
min.
Diode / Diode
Durchlaßspannung
forward voltage
IF = 1600A, V GE = 0V, Tvj = 25°C
Rückstromspitze
peak reverse recovery current
IF = 1600A, - diF/dt = 9600A/µsec
VF
IF = 1600A, V GE = 0V, Tvj = 125°C
VR = 900V, VGE = -10V, T vj = 25°C
IRM
VR = 900V, VGE = -10V, T vj = 125°C
Sperrverzögerungsladung
recovered charge
max.
2,1
2,5
V
2,1
2,5
V
1400
A
1700
A
300
µAs
560
µAs
210
mWs
380
mWs
IF = 1600A, - diF/dt = 9600A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
Qr
VR = 900V, VGE = -10V, T vj = 125°C
Abschaltenergie pro Puls
reverse recovery energy
typ.
IF = 1600A, - diF/dt = 9600A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
2(8)
Erec
FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor / transistor, DC
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
λPaste = 1 W/m*K / λgrease = 1 W/m*K
typ.
RthJC
Diode/Diode, DC
RthCK
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
Betriebstemperatur
operation temperature
Top
Lagertemperatur
storage temperature
Tstg
max.
0,01
K/W
0,017
K/W
0,008
K/W
150
°C
-40
125
°C
-40
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
AlN
Kriechstrecke
creepage distance
17
mm
Luftstrecke
clearance
10
mm
CTI
comperative tracking index
min.
275
M1
Anzugsdrehmoment f. mech. Befestigung
mounting torque
terminals M4
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
M2
terminals M8
Gewicht
weight
G
1050
5
Nm
2
Nm
8 - 10
Nm
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
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FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
V GE = 15V
3500
3000
IC [A]
2500
2000
1500
Tj = 25°C
Tj = 125°C
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
4,5
5,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
T vj = 125°C
3500
VGE = 20V
3000
VGE = 15V
VGE = 12V
VGE = 10V
2500
VGE = 9V
IC [A]
VGE = 8V
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
VCE [V]
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FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
3500
3000
Tj = 25°C
Tj = 125°C
IC [A]
2500
2000
1500
1000
500
0
5
6
7
8
9
10
11
12
13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
IF = f (VF)
3500
Tvj = 25°C
3000
Tvj = 125°C
IF [A]
2500
2000
1500
1000
500
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
VF [V]
5(8)
FZ1600R17KF6C B2.xls
Technische Information / Technical Information
FZ1600R17KF6C B2
IGBT-Module
IGBT-Modules
Schaltverluste (typisch)
Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)
Ω , VCE = 900V, Tj = 125°C, VGE = ± 15V
Switching losses (typical) Rgon = Rgoff =0,9Ω
1800
Eoff
1600
Eon
Erec
1400
E [mJ]
1200
1000
800
600
400
200
0
0
500
1000
1500
2000
2500
3000
3500
IC [A]
Schaltverluste (typisch)
Switching losses (typical)
Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)
IC = 1600A , VCE = 900V , Tj = 125°C, VGE = ± 15V
2500
Eon
Eoff
E [mJ]
2000
Erec
1500
1000
500
0
0
1
2
3
4
5
6
7
RG [Ω
Ω]
6(8)
FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Transienter Wärmewiderstand
Transient thermal impedance
ZthJC = f (t)
0,1
ZthJC [K / W]
0,01
0,001
Zth:Diode
Zth:IGBT
0,0001
0,001
0,01
0,1
1
10
100
t [sec]
i
ri [K/kW] : IGBT
τi [sec] : IGBT
ri [K/kW] : Diode
τi [sec] : Diode
1
2
3
4
0,94
4,72
1,425
2,92
0,027
0,052
0,09
0,838
7,85
3,53
1,12
4,52
0,0287
0,0705
0,153
0,988
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Rg = 0,9 Ohm, T vj= 125°C
3500
3000
2500
IC [A]
IC,Modul
IC,Chip
2000
1500
1000
500
0
0
200
400
600
800
1000
1200
1400
1600
1800
VCE [V]
7 (8)
FZ1600R17KF6C B2.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ1600R17KF6C B2
Äußere Abmessungen / external dimensions
8(8)
FZ1600R17KF6C B2.xls
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