HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 12A, 600V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns • Low Conduction Loss GATE COLLECTOR (BOTTOM SIDE METAL) • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. G E PACKAGING AVAILABILITY PART NUMBER HGTG12N60D1D PACKAGE TO-220AB BRAND G12N60D1D NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125 inches from case for 5s) HGTG12N60D1D 600 600 21 12 48 ±20 30A at 0.8 BVCES 21 12 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-46 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 File Number 2800.4 Specifications HGTG12N60D1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage IC = 280µA, VGE = 0V BVCES Collector-Emitter Leakage Voltage TEST CONDITIONS ICES VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) Gate-Emitter Threshold Voltage IC = IC90, VGE = 15V TYP MAX UNITS 600 - - V TC = +25oC - - 280 µA TC = +125oC - - 5.0 mA TC = +25oC - 1.9 2.5 V TC = +125oC - 2.1 2.7 V 3.0 4.5 6.0 V IC = 250µA, VCE = VGE, TC = +25oC VGE(TH) MIN Gate-Emitter Leakage Current IGES VGE = ±20V - - ±500 nA Gate-Emitter Plateau Voltage VGEP IC = IC90, VCE = 0.5 BVCES - 7.2 - V IC = IC90, VCE = 0.5 BVCES VGE = 15V - 45 60 nC VGE = 20V - 70 90 nC - 100 - ns - 150 - ns On-State Gate Charge QG(ON) Current Turn-On Delay Time tD(ON)I Current Rise Time L = 500µH, IC = IC90, RG = 25V, VGE = 15V, TJ = +150oC, VCE = 0.8 BVCES tRI Current Turn-Off tD(OFF)I - 430 600 ns Current Fall Time tFI - 430 600 ns Turn-Off Energy (Note 1) WOFF - 1.8 - mJ Thermal Resistance IGBT RθJC - - 1.67 oC/W Thermal Resistance Diode RθJC - - 1.5 oC/W Diode Forward Voltage VEC IEC = 12A - - 1.50 V Diode Reverse Recovery Time tRR IEC = 12A, dIEC/dt = 100A/µs - - 60 ns NOTE: 1. Turn-off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60D1D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-off Switching Loss. This test method produces the true total Turn-off Energy Loss. Typical Performance Curves 20 PULSE DURATION = 250µs DUTY CYCLE < 0.5% VCE = 10V 16 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 20 12 8 TC = +150oC TC = +25oC 4 TC = -40oC 0 PULSE DURATION = 250µs DUTY CYCLE < 0.5% TC = +25oC VGE = 10V VGE = 7.5V 15 VGE = 15V VGE = 7.0V 10 VGE = 6.5V 5 VGE = 5.7V VGE = 6.0V 0 0 2 4 6 8 10 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) VGE, GATE-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) 3-47 5 HGTG12N60D1D Typical Performance Curves (Continued) 1200 25 VCE = 480V, VGE = 10V AND 15V TJ = +150oC, RGE = 25Ω, L = 500µH 1000 20 tFI, FALL TIME (ns) 15 10 800 600 400 5 200 0 +25 0 +50 +75 +100 +125 1 +150 10 FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE f = 1MHz C, CAPACITANCE (pF) 2500 2000 CISS 1000 COSS 500 CRSS 0 0 5 FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT VCE, COLLECTOR-EMITTER VOLTAGE (V) 3000 1500 10 15 20 10 600 VCC = BVCES 7.5 0.75 BVCES 0.75 BVCES 300 0.25 BVCES 0.25 BVCES 2.5 150 RL = 60Ω IG(REF) = 0.868mA VGE = 10V 0 0 20 WOFF , TURN-OFF SWITCHING LOSS (mJ) VCE(ON), SATURATION VOLTAGE (V) 3 VGE = 10V 2 VGE = 15V 1 IG(REF) IG(ACT) TIME (µs) 80 IG(REF) IG(ACT) FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260) 5.0 TJ = +150oC 5.0 0.50 BVCES 0.50 BVCES 25 FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE VCC = BVCES 450 VCE, COLLECTOR-EMITTER VOLTAGE (V) 4 20 PEAK COLLECTOR-EMITTER CURRENT (A) TC , CASE TEMPERATURE (oC) VGE, GATE-EMITTER VOLTAGE (V) ICE , COLLECTOR CURRENT (A) VGE = 15V TJ = +150oC, VGE = 10V RGE = 25Ω, L = 500µH 1.0 VCE = 480V VCE = 240V 0.1 0 1 10 1 20 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT 3-48 10 ICE, COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT HGTG12N60D1D Typical Performance Curves (Continued) 1000 100 fOP , OPERATING FREQUENCY (kHz) tD(OFF)I , TURN-OFF DELAY (ns) TJ = +150oC RGE = 25Ω L = 500µH VCE = 240V, VGE = 10V VCE = 240V, VGE = 15V VCE = 480V, VGE = 10V VCE = 480V, VGE = 15V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RθJC = 1.67oC/W 10 VCE = 480V, VGE = 10V AND 15V VCE = 480V, VGE = 10V AND 15V 1 100 1 10 1 10 30 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION 20 ICE, COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE 100 80 70 10 t, RECOVERY TIMES (ns) IEC , EMITTER-COLLECTOR CURRENT (A) TJ = +150oC, TC = +100oC RG = 25Ω, L = 500µH TJ = +150oC TJ = +100oC 1.0 0.1 TJ = +25oC tRR 60 50 tA 40 30 tB 20 10 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1.8 10 100 IEC , EMITTER-COLLECTOR CURRENT (A) VEC , EMITTER-COLLECTOR VOLTAGE (V) FIGURE 11. TYPICAL DIODE EMITTER-TO-COLLECTOR VOLTAGE FIGURE 12. TYPICAL tRR, tA, tB vs FORWARD CURRENT Operating Frequency Information Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) so that the conduction losses (PC) can be approximated by PC = (VCE x ICE)/2. WOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE - 0A). The switching power loss (Figure 10) is defined as fMAX1 x WOFF . Turn on switching losses are not included because they can be greatly influenced by external circuit conditions and components. 3-49 HGTG12N60D1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 3-50 ASIA Intersil (Taiwan) Ltd. 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