IRF IRL3705N

PD - 9.1370C
IRL3705N
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.01Ω
G
Description
ID = 89A…
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
89…
63
310
170
1.1
± 16
340
46
17
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
0.90
–––
62
°C/W
8/25/97
IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
–––
–––
1.0
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
140
37
78
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3600
870
320
V(BR)DSS
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.010
VGS = 10V, ID = 46A „
0.012
Ω
VGS = 5.0V, I D = 46A „
0.018
VGS = 4.0V, I D = 39A „
2.0
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, ID = 46A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
98
ID = 46A
19
nC VDS = 44V
49
V GS = 5.0V, See Fig. 6 and 13 „
–––
VDD = 28V
–––
I D = 46A
ns
–––
RG = 1.8Ω, VGS = 5.0V
–––
RD = 0.59Ω, See Fig. 10 „
Between lead,
–––
nH
6mm (0.25in.)
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 89…
showing the
A
G
integral reverse
––– ––– 310
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 46A, VGS = 0V „
––– 94 140
ns
TJ = 25°C, IF = 46A
––– 290 440
nC
di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
ƒ ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
IRL3705N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP
ID , D ra in -to -S o u rc e C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
100
10
2 .5V
20 µ s PU LSE W ID TH
T J = 2 5°C
1
0.1
1
10
100
2.5 V
10
20 µ s PU LSE W ID TH
T J = 1 75°C
1
A
100
0.1
V D S , Drain-to-Source V oltage (V )
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
TJ = 2 5 °C
TJ = 1 7 5 ° C
10
V DS = 2 5 V
2 0 µ s P U L S E W ID T H
2.0
3.0
4.0
5.0
6.0
7.0
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
1
10
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
100
1
8.0
A
I D = 77 A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3705N
V GS
C iss
C rs s
C is s C os s
C , C a p a c ita n c e (p F )
5000
=
=
=
=
15
0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
6000
C os s
2000
C rs s
1000
0
10
9
6
3
FO R TES T C IR CU IT
SEE FIG U R E 13
0
A
1
V DS = 4 4V
V DS = 2 8V
12
4000
3000
I D = 4 6A
0
100
V D S , D rain-to-S ource Voltage (V )
40
60
80
100
120
A
140
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
20
100
TJ = 1 75°C
T J = 2 5°C
10µ s
100
100µ s
1 ms
10
10m s
VG S = 0 V
10
0.4
0.8
1.2
1.6
2.0
2.4
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRL3705N
100
VGS
80
ID , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
D.U.T.
RG
+
-VDD
60
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response
(Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRL3705N
15 V
L
VD S
D .U .T
RG
IA S
10V
tp
D R IV E R
+
V
- DD
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
800
TO P
BO TTOM
600
400
200
0
V D D = 2 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
V (BR )D SS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
ID
1 9A
33A
46 A
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRL3705N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL3705N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )
-B -
3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )
4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A -
1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 . 1 5 ( .0 4 5 )
M IN
1
2
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
3X
L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN
3
1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )
0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )
3 X 0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )
M
B A
M
2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H
3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
Part Marking Information
TO-220AB
E XEAM
PLE
: T: HITSHI IS
A NA NIRFIRF
1010
X AM
PLE
S IS
1010
W IT
A SASSESMB
LY LY
WHIT H
E MB
LOLO
T CO
DEDE
9B 9B
1M1M
T CO
A A
IN TE
R NA
T ION
A LA L
IN TE
R NA
T ION
R EC
T IFTIER
R EC
IF IER
IR FIR1010
F 1010
LOLO
GOGO
9246
9246
9B 9B 1M1M
A SASSEM
B LY
S EM
B LY
LOLO
T T COCO
DEDE
P APRT
NUNU
M BE
R R
A RT
M BE
D ADTE
C OD
E E
A TE
C OD
(Y YW
W )W )
(Y YW
Y YY =Y YE
A RA R
= YE
WW
W W= W
= EWEK
E EK
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Data and specifications subject to change without notice.
8/97