ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 90 A 360 A 100 A 50 mJ 5 TC = 25°C -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 300 Weight (TAB) G S TO-264 AA (IXFK) G °C - 0.9/6 Nm/lb.in. 10 g G = Gate S = Source l VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 8 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 V l l l l l 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 µA mA l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.022 Ω l © 1997 IXYS All rights reserved 2 (TAB) S D = Drain TAB = Drain Features l Test Conditions D W TJM TL TO-264 AA (IXFK-S) V/ns 500 TJ Symbol = 200 V = 90 A = 22 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt,Low trr PD VDSS ID25 RDS(on) IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast intrinsic rectifier Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages l l Easy to mount Space savings High power density S version suitable for surface mounting 97536 (10/97) IXFK90N20Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 60 S 11000 pF 1600 pF 100 pF Crss td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 ns td(off) RG = 1 Ω (External), 55 ns 12 ns 190 nC 60 nC 60 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-264 AA; SMD-264 RthCK TO-264 AA 0.26 K/W 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 100 A ISM Repetitive; pulse width limited by TJM 400 A VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V 200 ns µC A trr QRM IRM 120 0.7 10 IF = IS, -di/dt = 100 A/µs, VR = 100 V IXFK90N20QS TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-264 SMD Outline Dim. 1 Gate 2, 4 Drain (collector) 3 Source (emitter) Millimeter Min. Max. Inches Min. Max. A A1 4.70 2.59 5.31 3.00 .185 .102 .209 .118 b b1 b2 0.94 2.21 2.79 1.40 2.59 3.20 .037 .087 .110 .055 .102 .126 C 0.43 0.74 .017 .029 D 25.58 26.59 1.007 1.047 E e 19.30 20.29 5.46 BSC .760 .799 .215 BSC L L1 L2 L3 4.90 2.24 1.90 0.00 5.10 2.44 2.10 0.10 .193 .088 .075 .000 .201 .096 .083 .004 ∅P 3.10 3.51 .122 .138 Q Q1 6.10 8.38 6.50 8.79 .240 .330 .256 .346 3.94 2.16 4.75 2.36 .155 .085 .187 .093 6.17 6.43 .243 .253 ∅R ∅R1 Note: S 1. This drawing meets of dimensions$ requirement of JEDEC outlines TO-264AA except L, L1, L2, L3. 2. All metal surface are solder plated except trimmed area. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025